semi合集-English.pdf - 第4969页

SEMI M11-0704 © SEMI 1988, 2004 26 ITEM p/p - EPITAXIAL CIRCUIT WAFER (DRAM) p/p + EPITAXIAL CIRCUIT WAFER (Logic/ DRAM) p/p ++ EPIAXIAL CIRCUIT WAFER (Logic) 9.2- 9.5 OTHER none none none 9.6 Roughness NS (See Note 2.) …

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SEMI M11-0704 © SEMI 1988, 2004 25
ITEM
p/p
-
EPITAXIAL
CIRCUIT WAFER
(DRAM)
p/p
+
EPITAXIAL
CIRCUIT WAFER
(Logic/DRAM)
p/p
++
EPIAXIAL
CIRCUIT WAFER
(Logic)
6.2.2 Notch Angle 90 +5, -1 degrees 90 +5, -1 degrees 90 +5, -1 degrees
6.3 Notch Orientation
<110> ± 1° <110> ± 1° <110> ± 1°
6.6 Edge Profile* Per SEMI M1 Per SEMI M1 Per SEMI M1
6.6.1 Edge Surface Finish Polished * Polished * Polished *
6.7 Thickness 300 mm per SEMI
M1
300 mm per SEMI
M1
300 mm per SEMI
M1
6.7.1 Thickness Variation (9-Point TTV) NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.7.2 Thickness Variation (GBIR)
" 3 µm " 3 µm " 3 µm
6.10 Bow NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.11 Warp
(only process control data required)
" 50 µm " 50 µm for wafers
without backseal
" 100 µm for wafers
with backseal
" 50 µm for wafers
without backseal
" 100 µm for wafers
with backseal
6.12 Sori NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.13 Flatness/Global NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
6.14
B
Flatness/Site (See NOTE 4)
SFSR " 0.18 µm SFSR " 0.18 µm SFSR " 0.18 µm
7.0 FRONT SURFACE CHEMISTRY
7.1 Surface Metal Contamination
Sodium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Aluminum
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
Potassium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Chromium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Iron
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Nickel
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Copper
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Zinc
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
Calcium
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
8.0 FRONT SURFACE CRITERIA
8.1A Scratches (macro) none none none
8.1B Scratches (micro) " 10 mm (total
length)
" 10 mm (total
length)
" 10 mm (total
length)
8.3 Localized Light Scatterers
– Only particles for epitaxial wafers
– Sizes are PSL equivalents
" 60 @ ! 0.09 µm
(300 mm)
" 27 @ ! 0.09 µm
(200 mm)
or (See NOTE 5)
" 34 @ ! 0.12 µm
(300 mm)
" 15 @ ! 0.12 µm
(200 mm)
" 60 @ ! 0.09 µm
(300 mm)
" 27 @ ! 0.09 µm
(200 mm)
or (See NOTE 5)
" 34 @ ! 0.12 µm
(300 mm)
" 15 @ ! 0.12 µm
(200 mm)
" 60 @ ! 0.09 µm
(300 mm)
" 27 @ ! 0.09 µm
(200 mm)
or (See NOTE 5)
" 34 @ ! 0.12 µm
(300 mm)
" 15 @ ! 0.12 µm
(200 mm)
8.4 Edge Chips none none none
8.5-
8.16
OTHER none none none
9.0 BACK SURFACE CRITERIA
9.1 Edge Chips none none none
SEMI M11-0704 © SEMI 1988, 2004 26
ITEM
p/p
-
EPITAXIAL
CIRCUIT WAFER
(DRAM)
p/p
+
EPITAXIAL
CIRCUIT WAFER
(Logic/DRAM)
p/p
++
EPIAXIAL
CIRCUIT WAFER
(Logic)
9.2-
9.5
OTHER none none none
9.6 Roughness NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
9.7
Brightness (Gloss) 60° angle of incidence,
referenced to a mirror polished wafer. NOTE:
Double-side polish process preferred
! 80% ! 80% Applies to
wafers without
backseal only.
! 80% Applies to
wafers without
backseal only.
9.X Localized Light Scatterers (See Note 6) NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
9.YA Scratches (Macro) none none none
9.YB Scratches (Micro) " 25 mm (total
length)
" 25 mm (total
length)
" 25 mm (total
length)
11.0 ADDITIONAL EPITAXIAL LAYER CHARACTERISTICS
11.1 Conductivity Type/Structure
p/p
-
p/p
+
p/p
++
11.2 Primary Dopant Boron Boron Boron
11.3 Silicon Source Gas NS (See Note 2.) NS (See Note 2.) NS (See Note 2.)
11.4 Epitaxial Growth Method NS (See Note 2.)
(see Item 5.3)
NS (See Note 2.)
(see Item 5.3)
NS (See Note 2.)
(see Item 5.3)
11.5 Net Carrier Density Target Variation (Center of
wafer)
user/supplier user/supplier user/supplier
11.6 Net Carrier Density Variation
± 5% ± 5% with backseal
± 10% without
backseal
± 5% with backseal
± 10% without
backseal
11.7 Thickness Target Variation
± 5% ± 5% ± 5%
11.8 Thickness Variation
± 10% ± 10% ± 10%
11.9 Transition Width user/supplier user/supplier user/supplier
11.X Layer Flat Zone user/supplier user/supplier user/supplier
13.1 Stacking Faults (See Note 7) < 2 per wafer < 2 per wafer < 2 per wafer
13.2 Slip/Dislocations (See Note 8) none none none
13.5-
13.13
OTHER (see Item 13.1) (see Item 13.1) (see Item 13.1)
NOTE 1: * indicates substrate specification.
NOTE 2: NS is the abbreviation for Not Specified.
NOTE 3: Practical non-destructive metrology did not exist at the time this document was approved.
NOTE 4: The site size is 32 mm × 25 mm. Partial sites are included. The metrology was being developed at the time this document was being
balloted.
NOTE 5: These values are mathematically consistent. The 0.09 µm count limit was transformed using draft international standard: ISO/DIS
14644-1 which follows the equation: 34 counts per wafer = 60 counts per wafer /(0.12 µm/ 0.09 µm)2.
NOTE 6: The process control capability is expected to be: " 500 @ ! 0.25 µm.
NOTE 7: The lot average density is < 0.0029/cm2.
NOTE 8: Tested per SEMI MF1726; a depth < 100 nm is acceptable.
SEMI M11-0704 © SEMI 1988, 2004 27
Table 8 Guide for the Specification of Polished Wafer, P+ Substrate for 0.25 µm Design Rule Epitaxial
CUSTOMER PART NUMBER: REVISION DATE:
REQ. M18 ITEM # SPECIFICATION TESTING LEVEL
WAFER TEST PIECE
100% SAMPLE 100% SAMPLE
POLISHED WAFER, EPITAXIAL SUBSTRATE - MUST MEET SEMI M1
15.1 Resistivity
0.005-0.010 Ω·cm or 0.010-0.020 Ω·cm
Substrate Resistivity Backseal Required
0.005–0.010 Ω·cm
yes
0.010–0.020 Ω·cm
user specified
15.2 Bulk Micro
Defects
user specified
Dopant Boron
15.4 Nominal Diameter 150 mm [ ]
200 mm [ ]
15.5 Primary Flat/
Notch
User specified per SEMI M1
15.6 Extrinsic Getter User specified
Intrinsic Getter User specified
15.7 Laser Mark
Identification
SEMI M13 [ ]
SEMI M12 [ ]
SEMI T1 [ ]
15.8 Oxygen
Concentration
maximum 30 ppma, Old ASTM
Inspection Sheet Certificate required in a standard format to be
determined.
SQC Data Sheet SQC required in a standard format to be
determined.
12. MECHANICAL CHARACTERISTICS: PRE EPITAXIAL
Total Thickness
Variation (TTV)
5 µm (GBIR)
12.5 Flatness/Site
" 0.25 µm (SFQR), site size 22 mm × 22 mm
including partial sites, PUA to be negotiated
13. FRONT SURFACE CHARACTERISTICS
13.2 Slip/Dislocations none
13.10 Edge Chips none per SEMI MF523, Section 12.3
13.14 Localized Light
Scatterers and
0.23 per cm
2
maximum ! 0.12 µm LSE and
0.0 per cm
2
! 1 µm LSE, calibrate using
SEMI M53
Scratches none
13.15 Nominal Edge
Exclusion
3 mm for all front surface characteristics
except cracks/fractures, edge chips, crow’s
feet, and foreign matter
Surface Metals " 1 × 10
11
atoms per cm
2
for each element:
Na, Al, Cr, K , Fe, Ni, Cu, Zn
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 12.4