semi合集-English.pdf - 第6216页

SEMI G43-87 © SEMI 198 6, 1987 4 R Θ JR = T J − T R P H(Package) junction - to - reference point where R Θ JR = R Θ JA and T R =T A . 6 Summary Report The following details shall be specified as appropr iate: a. Descript…

SEMI G43-87 © SEMI 1986, 19873

emitter-base voltage of bipolar transistors. Other

appropriate temperature-sensitive parameters may be

used for indirectly measuring junction temperature for

fabrication technologies that do not lend themselves to

sensing the active junction voltages.

5.2.2.1 Steady-State Technique for Measuring T

—

The following symbols shall apply for the purpose of

these measurements:

— ring current in milliamperes.

— Value of temperature-sensitive parameters in

millivolts, measured at I

, and corresponding to the

temperature of the junction heated by P

— Calibration temperature in degrees Celsius,

measured at the reference point.

— Value of temperature-sensitive parameter in

millivolts, measured at I

and specific value of T

The measurement of T

using junction forward voltage

as the TSP is made in the following manner:

Step 1 — Measurement of the temperature coefficient

of the TSP (calibration).

The coefficient of the temperature-sensitive parameter

is generated by measuring the TSP as a function of the

reference point temperature, for a specified constant

measuring current, I

, by externally heating the device

under test in an oven or in a fluid bath. The reference

point temperature range used during calibration shall

encompass the temperature range encountered in the

power application test (see Step 2). The measuring

current is generally chosen such that the TSP decreases

linearly with increasing temperature over the range of

interest and that negligible internal heating occurs in the

silicon and metal traces. For determining the optimum

TSP calibration or measuring current, V

vs. log I

curves for two temperature levels that encompass the

calibration temperature range of interest should be

plotted. The optimum measuring current, I

, is then

selected such that it resides on the linear portion of the

two V

vs. log I

curves that were generated. A

measuring current ranging from 0.05 to 5 mA is

generally used, depending on the specifications and

operating conditions of the device under test, for

measuring the TSP. The value of the TSP temperature

coefficient V

, for the particular measuring

current used in the test, is calculated from the

calibration curve, V

vs. T

. At least three points

should be used to generate the voltage vs. temperature

curve for the determination of the TSP temperature

coefficient.

Step 2 — Power application test.

The power application test is performed in two parts.

For both portions of the test, the reference point

temperature is held constant at a preset value. The first

measurement to be made is that of the temperature-

sensitive parameter, i.e., V

, under operating

conditions with the measuring current, I

, used during

the calibration procedure. The microelectronic device

under test shall then be operated with heating power

) applied. The temperature-sensitive parameter,

, shall be measured with constant measuring

current, I

, that was applied during the calibration

procedure (see Step 1).

The heating power, P

, shall be chosen such that the

calculated junction-to-reference point temperature

difference as measured at V

is ≥ 20°C. In

accomplishing this, the device under test should not be

operated at such a high heating power level that the on-

chip temperature-sensing and heating circuitry is no

longer electrically isolated. Care should also be taken

not to exceed the design ratings of the package-

interconnect system, as this may lead to an

overestimation of the power being dissipated in the

active area of the chip due to excessive power losses in

the package leads and wire bonds. The values of V

, and P

are recorded during the power application

test.

The following data shall be recorded for these test

conditions:

a. Temperature-sensitive electrical parameters (V

, or other appropriate TSP).

b. Junction temperature, T

, is calculated from the

equation:

= T

+ V

− V

()

∆V

∆T

−1

where T

= T

c. Case temperature, T

(including specific location).

d. Power dissipation, P

e. Mounting arrangement (including method of

thermocouple attachment and fluid temperature).

5.3 Calculations of R

θJR

5.3.1 Calculations of Package Thermal Resistance —

The thermal resistance of a microelectronic device can

be calculated when the junction temperature, T

, has

been measured in accordance with procedures outlined

in Sections 5.1 and 5.2.

With the data recorded from each test, the thermal

resistance shall be determined from:

SEMI G43-87 © SEMI 1986, 1987 4

ΘJR

−T

H(Package)

junction - to - reference point

where

ΘJR

= R

ΘJA

and T

6 Summary Report

The following details shall be specified as appropriate:

a. Description of package; including thermal test chip,

location of case or chip carrier temperature

measurement(s), and mounting arrangement.

b. Test condition(s), as applicable (see Section 5).

c. Test voltage(s), current(s), and power dissipation of

test chip.

d. Recorded data for each test condition, as applicable.

e. Symbol(s) with subscript designation(s) of the

thermal characteristics determined.

f. Accept or reject criteria.

Figure 1

Temperature Controlled Fluid Bath Assembly

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer’s

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI G44-94

SPECIFICATION FOR LEAD FINISHES FOR GLASS TO METAL SEAL

CERAMIC PACKAGES (ACTIVE DEVICES ONLY)

1 Preface

1.1 This specification defines lead finishes for glass to

metal seal ceramic packages assembled with iron-nickel

alloy leadframe construction. It defines composition,

properties, limits, and refers to appropriate tests for

utility.

1.2 Scope — The criteria detailed in this document

applies to glass to metal seal ceramic packages,

assembled with iron-nickel alloy leadframe

construction, which conforms to composition limits

specified in MIL-M-38510 as lead material Type A or

Type B.

1.3 Units — U.S. Customary (inch -pound) or metric

(SI) units may be used at the customer’s discretion.

This specification uses U.S. Customary units as the

prime unit.

2 Applicable Documents

2.1 Order of Precedence — To avoid conflicts, the

order of precedence when ordering packages shall be as

follows:

Purchase Order

Customer Package Drawing

This Specification

Reference Documents