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SEMI F21-1102 © SEMI 1995, 2002 2 8.2 Other 8.2.1 Berro, N., Cook, J.P. D., et al., “Airborne Contami nation of Semi conductor Wafers Traced t o Humidification Plant Additives,” Journal of the I ES , pp. 15–18, November …

SEMI F21-1102 © SEMI 1995, 2002 1

SEMI F21-1102

CLASSIFICATION OF AIRBORNE MOLECULAR CONTAMINANT

LEVELS IN CLEAN ENVIRONMENTS

This classification was technically approved by the Global Facilities Committee and is the direct

responsibility of the North American Facilities Committee. Current edition approved by the North American

Regional Standards Committee on August 29, 2002. Initially available at www.semi.org September 2002; to

be published November 2002. Originally published in 1995.

1 Purpose

1.1 The purpose of this standard is to classify

microelectronics clean environments with respect to

their molecular (non-particulate) contaminant levels.

This standard classification provides a consistent means

of communicating acceptable contaminant levels of

groups of specific airborne molecular contaminants.

See Related Information 1 appended to this standard.

2 Scope

2.1 This standard classification is to be used in the

specification of semiconductor clean environments

(including process tool environments) and of

contamination control and measurement equipment

performance.

2.2 This standard does not purport to address safety

issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety health practices and determine the

applicability or regulatory limitations prior to use.

3 Referenced Standards

None.

4 Terminology

4.1 Definitions

4.1.1 acid — a corrosive material whose chemical

reaction characteristic is that of an electron acceptor.

4.1.2 base — a corrosive material whose chemical

reaction characteristic is that of an electron donor.

4.1.3 condensable — a substance (other than water),

typically having a boiling point above room

temperature at atmospheric pressure, capable of

condensation on a clean surface.

4.1.4 dopant — a chemical element which modifies the

electrical properties of a semiconductive material.

5 Basis of Classification

5.1 Classification is by the maximum allowable total

gas phase concentration of each category of material.

This classification system is depicted in Section 6. The

combination of a quantitative class for each of the four

categories yields a classification describing an

environment.

5.2 The maximum cumulative gas phase concentrations

of the four categories may be different.

5.3 Each category is designated by the letter “M,”

followed by the first letter of the category name A, B,

C, or D.

5.4 The integer following the category designator shall

indicate the maximum total gas phase concentration in

parts per trillion molar (pptm 1 ×10

-12

). For example, a

category MA-10 has a maximum allowable total

concentration of 10 parts per trillion molar for the

category of interest.

6 Classification

Material

Category

1* 10* 100* 1000* 10,000*

Acids MA-1 MA-10 MA-100 MA-1000 MA-10,000

Bases MB-1 MB-10 MB-100 MB-1000 MB-10,000

Condensables MC-1 MC-10 MC-100 MC-1000 MC-10,000

Dopants MD-1 MD-10 MD-100 MD-1000 MD-10,000

*Concentration, in parts per trillion

7 Reference Test Methods

7.1 Analytical methods capable of measuring the

classified levels at the agreed level of confidence shall

be used.

8 Related Documents

8.1 SEMI Standards

SEMI E45 — Test Method for the Determination of

Inorganic Contamination from Minienvironments Using

Vapor Phase Decomposition-Total Reflection X-Ray

Spectroscopy (VPD-TXRF), VPD-Atomic Absorption

Spectroscopy (VPD-AAS), or VPD/Inductively

Coupled Plasma-Mass Spectrometry (VPD/ICP-MS)

SEMI E46 — Test Method for the Determination of

Organic Contamination from Minienvironments Using

Ion Mobility Spectrometry (IMS)

SEMI F21-1102 © SEMI 1995, 2002 2

8.2 Other

8.2.1 Berro, N., Cook, J.P.D., et al., “Airborne

Contamination of Semiconductor Wafers Traced to

Humidification Plant Additives,” Journal of the IES,

pp. 15–18, November 1993.

8.2.2 Buchmann, K. and Rudolph, J., “Gas Chromato-

graphy of Radioactive Inorganic Compounds,” Journal

of Radiational Chemistry, 32(2): 245–64, 1976.

8.2.3 Dixon, W.J., “Processing Data for Outliers,”

Biometrics, 9(7): 74–89.

8.2.4 Kasi, S.R., Liehr, M., Thiry, P.A., et al.,

“Hydrocarbon Reaction with HF-Cleaned Si (100) and

Effects on Metal-Oxide-Semiconductor Device

Quality,” Applied Physics Letters, 59: 108–110, 1992.

8.2.5 Kelly, T.J. and Kinkead, D.A., “Testing of

Chemically Treated Adsorbent Air Purifiers,” ASHRAE

Journal, August 1993.

8.2.6 Kinkead, D.A., “Controlling a Killer: How to

Win the War Over Gaseous Contaminants,”

Cleanrooms, June 1993.

8.2.7 Kinkead, D.A. and Higley, J.K., “Targeting

Gaseous Contaminants in Wafer Fabs: Fugitive

Amines,” Microcontamination, pp. 37–40, June 1993.

8.2.8 Mori, E.J., Dowdy, J.D., and Shive, L.W.,

“Correlating Organophosphorus Contamination of

Wafer Surfaces with HEPA Filter Installation,”

Microcontamination, pp. 35–37, November 1992.

8.2.9 Muller, A.J., et al., “Volatile Cleanroom

Contaminants: Sources and Detection,” Solid State

Technology, September 1994, page 61.

8.2.10 Muller, A.J., Psota-Keity, L.A., and Sinclair,

J.K., “Concentrations of Organic Vapors and Their

Surface Arrival Rates at Surrogate Wafers During

Processing in Clean Rooms,” Proceedings of the

Electrochemical Society: Semiconductor Cleaning

Technology, Hollywood, FL, Ruzyllo, J. and Novak,

R.E. (eds.), vol. 90–9, pp. 204–211, 1990.

8.2.11 Seeman, D.J., “Fluid Seal Urethane

Gels/Chemical Compounds: The Need to Establish

Standards and Standard Test Procedures for Their

Acceptance in the Cleanroom Environment,”

Proceedings of 38th Annual Technical Meeting of IES,

Nashville, TN, pp. 492–497, May 1992.

8.2.12 Stevie, F.A., Harrus, A.S., Muller, A.J., et al.,

“Boron Contamination of Surfaces in Silicon

Microelectronics Processing: Characterization and

Causes,” Journal of Vacuum Science and Technology,

A9(5), 2813, 1991.

8.2.13 Tolg, G. and Tschopel, P., “Sources of Error in

Trace Inorganic Analytical Chemistry,” Systemic

Errors in Trace Analysis, Verlag VCH, Weinheim,

1993 in print.

RELATED INFORMATION 1

SPECIFIC CONTAMINANTS TO MEASURE FOR VERIFICATION OF

ENVIRONMENTAL COMPLIANCE

NOTE: This related information is not an official part of SEMI F21 and is not intended to modify or supercede the official

standard. It has been derived from the work of the originating task force. Publication was authorized by full ballot procedures.

Determination of the suitability of the material is solely the responsibility of the user.

Although it is difficult to compile an inclusive list, the

originating task force recommends that the user test the

air for each of the contaminants listed.

R1-1 Acids

• Hydrofluoric

• Sulfuric

• Hydrochloric

• Nitric

• Phosphoric

• Hydrobromic

R1-2 Bases

• Ammonia (ammonium hydroxide)

• Tetramethylammonium hydroxide

• Trimethylamine

• Triethylamine

• NMP

• Cyclohexylamine

• Diethylaminoethanol

• Methylamine

• Dimethylamine

• Ethanolamine

• Morpholine

R1-3 Condensables

• Silicone (boiling point ≥ 150°C)

• Hydrocarbon (boiling point ≥ 150°C)

R1-4 Dopants

• Boron (usually as boric acid)

• Phosphorous (usually as organophosphates)

• Arsenic (usually as arsenates)