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SEMI MF1049-0304 © SEMI 2003, 2004 5 RELATED INFORMATION 1 METHOD FOR ESTIMATION OF SHALLOW ETCH PIT DENSITY NOTICE: This related infor mation is not an official par t of SEMI MF1049. It was devel oped as part of the dev…

SEMI MF1049-0304 © SEMI 2003, 2004 4

NOTE 6: The percentage of the wafer covered may be

determined with the use of the universal wafer grid specified

in SEMI M17 that divides the wafer into 1000-area elements.

If the universal wafer grid is used, record the size of the edge

exclusion or the fixed quality area used. A1.6-mm peripheral

ring on a 125-mm diameter wafer represents 5% of the wafer

area.

12.2 Determine the level of haze present on the surface

from Table 2.

Table 2 Haze Level Classification

Level % of Wafer Area

A 0–5

B 5–25

C 25–75

D 75–100

12.3 Optional Estimation of Shallow Etch Pit Density

— If it is desired to estimate the shallow etch pit

density, use the procedure in Related Information 1.

13 Report

13.1 Report the following information:

13.1.1 Date of test, laboratory and operator

identification,

13.1.2 Identification of wafer lot,

13.1.3 Identification of the test wafer(s) (including

conductivity type, orientation, diameter, growth

method, and back surface condition),

13.1.4 Level of haze for each wafer tested, and

13.1.5 A diagram showing the location and distribution

of areas of high shallow etch-pit density, and, if

estimates of shallow etch-pit density are made,

locations of the count positions.

13.2 If the shallow etch-pit density was estimated on

one or more wafers, also report the following

information of each wafer tested:

13.2.1 Magnification used in the test,

13.2.2 Average estimated shallow etch-pit density, and

13.2.3 Maximum and minimum measured shallow

etch-pit density, if more than one count position was

employed.

14 Keywords

14.1 epitaxial; oxidation; preferential etch; saucer pit;

shallow etch pit; silicon

SEMI MF1049-0304 © SEMI 2003, 2004 5

RELATED INFORMATION 1

METHOD FOR ESTIMATION OF SHALLOW ETCH PIT DENSITY

NOTICE: This related information is not an official part of SEMI MF1049. It was developed as part of the

development of the document. This related information was approved for publication by full letter ballot on

December 4, 2003.

R1-1 Procedure

R1-1.1 Examine the wafer under magnification in the

range from 200 to 1000× to distinguish between etching

artifacts and shallow etch pits.

R1-1.2 Place the wafer on the microscope stage.

R1-1.3 Position the specimen so as to view the area of

interest on the etched wafer surface. Choose the area to

be viewed to include a high density of haze.

R1-1.4 Adjust the magnification so that up to 100

shallow etch pits are seen in the field of view. If more

than 100 shallow etch pits are in the field of view at

maximum magnification, report the shallow etch pit

density as “Too high to count.”

R1-1.5 Calculate the area of the field of view from its

diameter as determined to ± 1 µm with a stage

micrometer.

R1-1.6 Count and record the number of shallow etch

pits in the field of view. Count as one defect, those

defects that converge or overlap except when the etch

pits are well defined and are individually distin-

guishable.

R1-1.7 Determine the estimate of the shallow etch-pit

density by dividing the number of etch pits counted by

the area of the field of view.

R1-1.8 If more than one area is counted, compute the

average shallow etch-pit density for the wafer by

dividing the sum of the shallow etch-pit densities

estimated by the total number of counting positions.

R1-2 Precision and Bias

R1-2.1 Precision — Because this optional method is

intended for use only for qualitative estimates of the

area of a wafer covered by haze due to shallow etch pits

and the shallow etch-pit density, no interlaboratory

evaluation of this optional method has been conducted

for the purposes of determining its expected

repeatability or reproducibility.

R1-2.2 Bias — No standards exist against which the

bias of this optional method can be evaluated.

NOTICE: SEMI makes no warranties or representa-

tions as to the suitability of the standards set forth

herein for any particular application. The determination

of the suitability of the standard is solely the

responsibility of the user. Users are cautioned to refer

to manufacturer' s instructions, product labels, product

data sheets, and other relevant literature, respecting any

materials or equipment mentioned herein. These

standards are subject to change without notice.

By publication of this standard, Semiconductor

Equipment and Materials International (SEMI) takes no

position respecting the validity of any patent rights or

copyrights asserted in connection with any items

mentioned in this standard. Users of this standard are

expressly advised that determination of any such patent

rights or copyrights, and the risk of infringement of

such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI MF1152-0305

TEST METHODS FOR DIMENSIONS OF NOTCHES ON SILICON

WAFERS

These test methods were technically approved by the Global Silicon Wafer Committee and are the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved for publication by

the North American Regional Standards Committee on November 4, 2004. Initially available at

www.semi.org January 2005; to be published March 2005. Original edition published by ASTM

International as ASTM F 1152-88. Last previous edition SEMI MF1152-02.

1 Purpose

1.1 Wafers must be accurately aligned in various processing equipment during integrated circuit manufacture.

1.2 A notch ground into the edge of the wafer at a specified orientation provides a positive method for such

alignment. The accuracy of the critical dimensions of the notch controls the possible accuracy of the alignment.

1.3 This test method may be used for process control, quality control, and incoming or outgoing inspection.

1.4 Until an index of precision is determined based on an interlaboratory evaluation, this test method is not

recommended for use in decisions between purchasers and suppliers.

2 Scope

2.1 This test method covers a nondestructive procedure to determine whether or not the dimensions, except for the

blend radius, of fiducial notches on silicon wafers fall within specified limits.

2.2 This test method is specifically directed to the notch dimensions specified in SEMI M1, but with suitable

modifications, the principles of this test method may be applied to any desired notch dimensions.

2.3 No test is provided for the blend radius at the apex of the notch.

2.4 The values stated in SI units are to be regarded as the standard. The values given in parentheses are for

information only.

NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the

responsibility of the user of this standard to establish appropriate safety and health guides and determine the

applicability of regulatory or other limitations prior to use.

3 Limitations

3.1 Any foreign material or rough spots on the notch edge in the light path may present a distorted image which can

result in the determination of incorrect dimensions.

3.2 Alignment of the notch position with respect to the center of the wafer is important in achieving an accurate

determination of the notch characteristics.

3.3 Wear of grinding tools and process variations may result in notch edges which are not exactly straight and a

nonunique radius at the apex of the notch. Under these conditions, great care must be taken to align the image of the

notch correctly against the appropriate portions of the template.

4 Referenced Standards

4.1 SEMI Standard

SEMI M1 — Specifications for Polished Monocrystalline Silicon Wafers

4.2 ANSI Standard

ANSI/ASQC Z1.4 — Sampling Procedures and Tables for Inspection by Attributes

1 American National Standards Institute, New York Office: 25 West 43rd Street, New York, NY 10036, USA. Telephone: 212.642.4900, Fax:

212.398.0023, Website: