semi合集-English.pdf - 第7434页

SEMI MF1529-1104 © SEMI 2004 15 R1-2.2 While not shown here , the contou r maps that were develo ped from the uniformity dat a clearly show different patterns or finger prints for the indi vidual wafers. The se contour m…

SEMI MF1529-1104 © SEMI 2004 14

Table R1-2 Uniformity Results from 3 Runs on 3 Waters Each from 5 Different Processes

Process Instrument Precision Wafer Parameter

Run 1 Run 2 Run 3

Boron Implant 0.028% Average Resistance 534.8  531.8  534.1 

Wafer 4 Standard Deviation 0.69 % 0.68 % 0.74 %

Temperature Range 26.0–26.2°C 19.4–20.1°C 23.4–23.9°C

Boron Implant 0.028% Average Resistance 556.4  553.8  554.7 

Wafer 5 Standard Deviation 1.23 % 1.22 % 1.23 %

Temperature Range 25.6–25.9°C 20.4–21.1°C 24.2–24.7°C

Boron Implant 0.028% Average Resistance 550.7  547.8  549.7 

Wafer 6 Standard Deviation 1.35 % 1.34 % 1.33 %

Temperature Range 25.6–26.0°C 21.0–21.6°C 24.6–25.0°C

Phos. Implant 0.18% Average Resistance 147.5  148.1  147.5 

Wafer 4 Standard Deviation 0.71 % 0.71 % 0.69 %

Temperature Range 20.4–21.0°C 24.9–25.2°C 20.5–21.2°C

Phos. Implant 0.018% Average Resistance 149.4  149.7  149.2 

Wafer 5 Standard Deviation 0.81 % 0.81 % 0.82 %

Temperature Range 21.4–21.9°C 24.9–25.2°C 21.6–22.3°C

Phos. Implant 0.018 Average Resistance 145.9  146.0  146.0 

Wafer 6 Standard Deviation 1.45 % 1.45 % 1.45 %

Temperature Range 22.4–22.8°C 22.1–22.7°C 22.4–22.9°C

Arsenic Implant 0.012% Average Resistance 26.16  26.16  26.16 

Wafer 4 Standard Deviation 0.57 % 0.56 % 0.56 %

Temperature Range 22.7–23.2°C 21.5–22.0°C 22.8–23.4°C

Arsenic Implant 0.012% Average Resistance 25.06  24.88  24.93 

Wafer 5 Standard Deviation 0.77 % 0.77 % 0.77 %

Temperature Range 22.0–27.0°C 22.2–22.7°C 23.4–24.0°C

Arsenic Implant 0.012% Average Resistance 27.55  27.34  27.44 

Wafer 6 Standard Deviation 0.74 % 0.74 % 0.74 %

Temperature Range 26.6–26.7°C 22.8–23.3°C 263.9–24.5°C

Polysilicon 0.009% Average Resistance 15.88  15.86  15.84 

Wafer 4 Standard Deviation 0.59 % 0.58 % 0.59 %

Temperature Range 24.2–24.7°C 23.0–23.5°C 22.1–22.6°C

Polysilicon 0.009% Average Resistance 14.69  14.72  14.69 

Wafer 5 Standard Deviation 0.29 % 0.29 % 0.29 %

Temperature Range 24.6–25.0°C 23.5–24.0°C 22.1–22.6°C

Polysilicon 0.009% Average Resistance 16.97  16.96  16.93 

Wafer 6 Standard Deviation 0.32 % 0.31 % 0.32 %

Temperature Range 24.9–25.3°C 23.8–24.3°C 22.2–22.7°C

n/p-epitaxy 0.08% Average Resistance 3982  3933  3961 

Wafer 4 Standard Deviation 0.89 % 0.73 % 0.69 %

Temperature Range 23.6–23.7°C 20.4–21.0°C 21.4–22.0°C

n/p-epitaxy 0.08% Average Resistance 3857  3800  3805 

Wafer 5 Standard Deviation 1.58 % 1.60 % 1.56 %

Temperature Range 23.6–24.0°C 21.5–22.1°C 21.4–22.0°C

n/p-epitaxy 0.08% Averager Resistance 3929  4006  3940 

Wafer 6 Standard Deviation 1.66 % 1.75 % 1.67 %

Temperature Range 19.5–20.0°C 22.4–22.9°C 20.7–21.3°C

The temperature range given is variation within each individual measurement run of 81 test sites. In Table R1-1 the temperature range given is the variation of the

average temperature for each of the test runs.

SEMI MF1529-1104 © SEMI 2004 15

R1-2.2 While not shown here, the contour maps that

were developed from the uniformity data clearly show

different patterns or fingerprints for the individual

wafers. These contour map patterns were very

reproducible from run to run.

NOTICE: SEMI makes no warranties or

representations as to the suitability of the standards set

forth herein for any particular application. The

determination of the suitability of the standard is solely

the responsibility of the user. Users are cautioned to

refer to manufacturer's instructions, product labels,

product data sheets, and other relevant literature,

respecting any materials or equipment mentioned

herein. These standards are subject to change without

notice.

By publication of this standard, Semiconductor

Equipment and Materials International (SEMI) takes no

position respecting the validity of any patent rights or

copyrights asserted in connection with any items

mentioned in this standard. Users of this standard are

expressly advised that determination of any such patent

rights or copyrights, and the risk of infringement of

such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI MF1530-1104

TEST METHOD FOR MEASURING FLATNESS, THICKNESS, AND

TOTAL THICKNESS VARIATION ON SILICON WAFERS BY

AUTOMATED NON-CONTACT SCANNING

This test method was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved for publication by

the North American Regional Standards Committee on July 11, 2004. Initially available at www.semi.org

September 2004; to be published November 2004. Original edition published by ASTM International as

ASTM F 1530-94. Last previous edition SEMI MF1530-0704.

1 Purpose

1.1 Flatness, thickness and thickness variation are vital

factors affecting the yield of semiconductor device

processing.

1.2 Knowledge of these characteristics can help the

producer and consumer determine if the dimensional

characteristics of a specimen wafer satisfy given

geometrical requirements.

1.3 This test method is suitable for measuring the

flatness and thickness of wafers used in semiconductor

device processing in the as-sliced, lapped, etched,

polished, epitaxial or other layer condition.

2 Scope

2.1 This test method covers a noncontacting,

nondestructive procedure to determine the thickness

and flatness of clean, dry, semiconductor wafers in such

a way that no physical reference is required.

2.2 This test method is applicable to wafers 50 mm or

larger in diameter, and 100 m (0.004 in.)

approximately and larger in thickness, independent of

thickness variation and surface finish, and of wafer

shape.

2.3 This test method measures the flatness of the front

wafer surface as it would appear relative to a specified

reference plane when the back surface of the water is

ideally flat, as when pulled down onto an ideally clean,

flat chuck. It does not measure the free-form shape of

the wafer.

2.4 Because no chuck is used as a measurement

reference, this test method is relatively insensitive to

microscopic particles on the back surface of the wafer.

2.5 The values stated in SI units are to be regarded as

the standard. The values given in parentheses are for

information only.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the user of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Limitations

3.1 Any relative motion between the probes and along

the probe measuring axis during scanning produces

error in the lateral position equivalent-measurement

data.

3.2 Most equipment systems capable of this

measurement have a definite range of wafer thickness

combined with sori/warp (dynamic range) that can be

accommodated without readjustment. If the sample

moves outside this dynamic range during either

calibration or measurement, results may be in error. An

overrange signal can be used to alert the operator and

measurement data examiners to this event.

3.3 The quantity of data points and their spacing may

affect the measurement results (see Section 7.1.5.2).

3.4 Site flatness measurements may be affected if the

site boundaries and corners do not contain data array

elements. This effect may be reduced through

interpolation techniques.

4 Referenced Standards

4.1 SEMI Standards

SEMI M1 — Specifications for Polished

Monocrystalline Silicon Wafers

SEMI M20 — Practice for Establishing a Wafer

Coordinate System

SEMI MF1241 — Terminology of Silicon Technology

4.2 ASTM Standard

E 691 — Practice for Conducting an Interlaboratory

Study to Determine the Precision of a Test Method

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

1 Available from ASTM International, 100 Barr Harbor Drive, West

Conshohocken, PA 19428, Tel: 610-832-9500, Fax: 610-832-9555,

Website

http://www.astm.org. Appears in Volume 14.02 of Annual

Book of ASTM Standards.