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SEMI P17-92 © SEM I 1992, 1999 2 NOTICE: These st andards do not purport to addres s safety issues, if any, as sociated with their use. It is the responsibility of the user of these sta ndards to establish appropriate sa…

SEMI P17-92 © SEMI 1992, 19991

SEMI P17-92 (Reapproved 0299)

DETERMINATION OF IRON, ZINC, CALCIUM, MAGNESIUM, COPPER,

BORON, ALUMINUM, CHROMIUM, MANGANESE, AND NICKEL IN

POSITIVE PHOTORESIST METAL ION FREE (MIF) DEVELOPERS BY

INDUCTIVELY COUPLED PLASMA EMISSION SPECTROSCOPY (ICP)

This standard was technically reapproved by the Resist Committee and is the direct responsibility of the North

American Microlithography Committee. Current edition approved by the North American Regional Standards

Committee in October 1998. Initially available at www.semi.org February 1999; to be published February 1999.

Originally published in 1992; previously published in 1996.

1 Scope

This procedure is an ICP plasma emission analysis for

determination of iron, zinc, calcium, magnesium,

copper, boron, aluminum, chromium, manganese, and

nickel in photoresist MIF developers. The applicable

concentration range and detection limit will depend

upon the element and instrument.

2 Spectrometer

An instrument with resolution sufficient to separate the

analytical emission lines in Table 1 is required.

Table 1. Analytical Lines of the Elements

Elements Analytical Line nm

Aluminum 396.152

Calcium 317.933

Copper 324.754

Iron 239.562

Boron 208.960

Magnesium 285.213

Nickel 231.604

Zinc 213.856

Chromium 283.563

Manganese 257.610

3 Standards

The standards should be weight/weight (mg/kg) and

should be diluted weight/weight since results will be

expressed in mg/kg.

The standards are prepared by diluting a concentrated

standard. For example, a 500 ppm standard is diluted to

50 ppm with deionized water. This solution is then

diluted to 0.25 ppm.

4 Plasma Conditions

The sample is pumped in the region of 0.7 mL/min.

usually with a peristaltic pump attached to the

nebulizer. The argon plasma flow rate and RF power

should be optimized for the sample using settings

recommended in the manufacturer manual. Generally, a

plasma gas flow rate of 12 L/min and an RF power of

1.25 kW is required.

5 Quantitation

No sample preparation nor dilution is required.

The detector gain is set by measuring the 0.25 ppm

standard. The standard should be run intermittently to

satisfy reasonable precision. Standard and sample

readings should be repeatable within 0.03 ppm. The

effect of sample viscosity on delivery of diluted sample

to the plasma was not found to be a factor for this

procedure. This effect can be checked by adding an

internal standard of an element known not to be present

in the sample (such as Yttrium) at 1 ppm and checking

the emission response vs. an external 1 ppm Yttrium

standard.

6 Calculation

ppm element (mg/kg)=

Ιx

Ιs

×0.25 ppm

Where Ιx = emission intensity of sample

Ιs = emission intensity of 0.25 ppm standard

SEMI P17-92 © SEMI 1992, 1999 2

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer's

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user's attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI P18-92 © SEMI 1992, 2004 1

SEMI P18-92 (Reapproved 1104)

SPECIFICATION FOR OVERLAY CAPABILITIES OF WAFER

STEPPERS

This specification was technically reapproved by the Global Micropatterning Committee and is the direct

responsibility of the North American Microlithography Committee. Current edition approved by the North

American Regional Standards Committee on August 16, 2004. Initially available at www.semi.org

September 2004; to be published November 2004. Originally published in 1992.

1 Scope

1.1 Definitions for the overlay capabilities of wafer

steppers are established, consistent with the primary

application of wafer stepper (i.e., the manufacturing of

very large-scale integrated circuits). Also included are

definitions for associated parameters: registration,

exposure field, good fields, and alignment.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

2 Referenced Standards

2.1 Statistical methods shall be used in accordance

with the procedures in NBS Handbook #91

(Experimental Statistics, by M.G. Natrella) and ASTM

STD 15D (Manual on the presentation of data and

control chart analysis).

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

3 Terminology

3.1 Definitions

3.1.1 overlay — a vector quantity defined at every

point on the wafer. It is the difference,

, between the

vector position,

, of a substrate geometry, and the

vector position of the corresponding point, 2P

, in an

overlaying pattern, which may consist of photoresist:

= 1P

– 2P

3.1.2 interfield overlay (also referred to as field-to-

field overlay) — The center of the lens is chosen to be a

reference point. The overlay at the reference point in

each exposure field is the interfield overlay.

3.1.3 exposure field — the area of a wafer covered by a

single exposure.

3.1.4 intrafield overlay (also referred to as within-a-

field overlay) — the overlay within an exposure field,

relative to the overlay at the center of the lens reference

location.

NOTE 1: From these definitions, it follows that the overlay at

any point on the wafer is the vector sum of interfield and

intrafield overlays.

3.1.5 registration — a vector quantity defined at every

point on the wafer. It is the difference,

, between the

vector position, 1P

, of a substrate geometry, and vector

position of the corresponding point,

, in a reference

grid:

= 1P

- 0P

3.1.5.1 The reference grid must be clearly specified in

any specification of registration.

3.1.5.2 Interfield and intrafield registration are defined

in a manner similar to interfield and intrafield overlay.

3.1.5.3 Overlay may be computed from registration

measurements if the same reference standard is used on

all systems for determining registration.

3.1.6 alignment — the mechanical positioning of

reference points on the wafers (“alignment targets”) to

the corresponding points on the reticles. The measure of

alignment is the overlay at the position on the wafer

where the alignment targets are placed.

3.1.7 Registration and overlay vectors shall be

decomposed into orthogonal components, X and Y,

along the directions of the stepper stage motion.

3.1.8 good fields — exposure fields in which the

magnitude of the overlay at every point within the field

is less than a specified value, V, in both the X and Y

directions, exclusive of contributions to overlay from

the reticles and non-linear deformations of the wafers

during non-stepper processing.

NOTE 2: It should be recognized that contributions from

reticles are non-statistical in nature, and that a particular

reticle will make the same contributions to overlay and

registration in every exposure field in which it is imaged.