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SEMI M11-0704 © SEMI 1988, 2004 28 CUSTOMER PART NUMBER : REVISION DATE: 14.2 Back Seal [ ] Silic on Oxide: 5000 ± 1000 Angstroms, [ ] Polysilicon: 10,000 ± 2000 Angstroms, [ ] Backside Da mage, [ ] None, [ ] Combination…

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SEMI M11-0704 © SEMI 1988, 2004 27
Table 8 Guide for the Specification of Polished Wafer, P+ Substrate for 0.25 µm Design Rule Epitaxial
CUSTOMER PART NUMBER: REVISION DATE:
REQ. M18 ITEM # SPECIFICATION TESTING LEVEL
WAFER TEST PIECE
100% SAMPLE 100% SAMPLE
POLISHED WAFER, EPITAXIAL SUBSTRATE - MUST MEET SEMI M1
15.1 Resistivity
0.005-0.010 Ω·cm or 0.010-0.020 Ω·cm
Substrate Resistivity Backseal Required
0.005–0.010 Ω·cm
yes
0.010–0.020 Ω·cm
user specified
15.2 Bulk Micro
Defects
user specified
Dopant Boron
15.4 Nominal Diameter 150 mm [ ]
200 mm [ ]
15.5 Primary Flat/
Notch
User specified per SEMI M1
15.6 Extrinsic Getter User specified
Intrinsic Getter User specified
15.7 Laser Mark
Identification
SEMI M13 [ ]
SEMI M12 [ ]
SEMI T1 [ ]
15.8 Oxygen
Concentration
maximum 30 ppma, Old ASTM
Inspection Sheet Certificate required in a standard format to be
determined.
SQC Data Sheet SQC required in a standard format to be
determined.
12. MECHANICAL CHARACTERISTICS: PRE EPITAXIAL
Total Thickness
Variation (TTV)
5 µm (GBIR)
12.5 Flatness/Site
" 0.25 µm (SFQR), site size 22 mm × 22 mm
including partial sites, PUA to be negotiated
13. FRONT SURFACE CHARACTERISTICS
13.2 Slip/Dislocations none
13.10 Edge Chips none per SEMI MF523, Section 12.3
13.14 Localized Light
Scatterers and
0.23 per cm
2
maximum ! 0.12 µm LSE and
0.0 per cm
2
! 1 µm LSE, calibrate using
SEMI M53
Scratches none
13.15 Nominal Edge
Exclusion
3 mm for all front surface characteristics
except cracks/fractures, edge chips, crow’s
feet, and foreign matter
Surface Metals " 1 × 10
11
atoms per cm
2
for each element:
Na, Al, Cr, K , Fe, Ni, Cu, Zn
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 12.4
SEMI M11-0704 © SEMI 1988, 2004 28
CUSTOMER PART NUMBER: REVISION DATE:
14.2 Back Seal [ ] Silicon Oxide: 5000 ± 1000 Angstroms,
[ ] Polysilicon: 10,000 ± 2000 Angstroms,
[ ] Backside Damage,
[ ] None,
[ ] Combination of: 3000 ± 1000 Angstroms
Silicon Oxide on top of 8000 ± 2000
Angstroms Polysilicon
Table 9 Guide For The Specification Of 0.13 Micron Design Rule Silicon Epitaxial Wafers
ITEM p/p
-
EPITAXIAL
CIRCUIT WAFER
(DRAM)
p/p
+
EPITAXIAL
CIRCUIT WAFER
(Logic/DRAM)
p/p
++
EPITAXIAL
CIRCUIT WAFER
(Logic)
1.0 GENERAL CHARACTERISTICS
1.1 Growth Method Cz or MCz * Cz or MCz * Cz or MCz *
1.2 Crystal Orientation {100} {100} {100}
1.3 Crystal Orientation/Tolerance ± 1° ± 1° ± 1°
1.4 Conductivity type p/p- p/p+ p/p++
1.5 Dopant Boron Boron Boron
1.6 Nominal Edge Exclusion 3 mm 3 mm 3 mm
2.0 ELECTRICAL CHARACTERISTICS
2.1.1 Resistivity (Center Point) 0.8–15 $·cm * 0.01–0.02 $·cm * 0.005–0.010 $·cm *
2.2 Radial Resistivity Variation
(See Note 9.)
< 20% * < 20% * < 20% *
2.3 Resistivity Striations NS * NS * NS *
3.0 CHEMICAL CHARACTERISTICS
3.1.1 Nominal Oxygen Concentration (Center) user/supplier user/supplier user/supplier
3.1.2 Oxygen Concentration Tolerance
Per old ASTM calibration factor (See
SEMI M44.)
± 2.0 ppma *
± 2.0 ppma *
(See Note 3.)
± 2.0 ppma *
(See Note 3.)
3.2 Radial Oxygen Variation
Per SEMI MF951
" 10% *
10 mm from Edge
" 10% *
10 mm from Edge
(See Note 3.)
" 10% *
10 mm from Edge
(See Note 3.)
3.3 Carbon Concentration
(See Note 9.)
" 0.5 ppma * " 0.5 ppma
(See Note 3.) *
" 0.5 ppma
(See Note 3.) *
4.0 STRUCTURAL CHARACTERISTICS
4.1 Dislocation Etch Pit Density NS NS NS
4.2 Slip none none none
4.3 Lineage none none none
4.4 Twin none none none
4.5 Swirl none none none
4.6 Shallow pits none none none
4.7 Oxidation-Induced Stacking Faults (OSF) NS * NS * NS *
4.8 Oxide Precipitates (BMD) O
i
Reduction
(%O
i
)
user/supplier user/supplier user/supplier
5.0 WAFER PREPARATION CHARACTERISTICS
5.1 Wafer ID Marking per M1 per M1 per M1
5.2 Front Surface Thin Film(s) NS NS NS
5.3 Denuded Zone user/supplier user/supplier user/supplier
SEMI M11-0704 © SEMI 1988, 2004 29
ITEM p/p
-
EPITAXIAL
CIRCUIT WAFER
(DRAM)
p/p
+
EPITAXIAL
CIRCUIT WAFER
(Logic/DRAM)
p/p
++
EPITAXIAL
CIRCUIT WAFER
(Logic)
5.4 Extrinsic Gettering Treatment user/supplier user/supplier user/supplier
5.5 Backseal none None or as
user/supplier
agreement
None or as
user/supplier
agreement
5.6 Annealing None or as
user/supplier
agreement
None or as
user/supplier
agreement
None or as
user/supplier
agreement
6.0 MECHANICAL CHARACTERISTICS
6.1 Diameter 300 ± 0.2 mm
or
200 ± 0.2 mm
300 ± 0.2 mm
or
200 ± 0.2 mm
300 ± 0.2 mm
or
200 ± 0.2 mm
6.2 Diameter Notch Dimensions
6.2.1 Notch Depth 1 +0.25,-0.00 mm 1 +0.25,-0.00 mm 1 +0.25,-0.00 mm
6.2.2 Notch Angle 90 +5,-1 degrees 90 +5,-1 degrees 90 +5,-1 degrees
6.3 Notch Orientation <110> ± 1° <110> ± 1° <110> ± 1°
6.61 Edge Profile* per SEMI M1 per SEMI M1 per SEMI M1
6.6.2 Edge Surface Finish Polished * Polished * Polished *
6.7 Thickness 775 ± 25 µm*
[300 mm diameter]
or
725 ± 20 µm*
[200 mm diameter]
775 ± 25 µm*
[300 mm diameter]
or
725 ± 20 µm*
[200 mm diameter]
775 ± 25 µm*
[300 mm diameter]
or
725 ± 20 µm*
[200 mm diameter]
6.7.1 Thickness Variation (9-Point TTV) NS NS NS
6.72 Thickness Variation (GBIR) " 3 µm " 3 µm " 3 µm
6.9 Surface Orientation 100 100 100
6.10 Bow NS NS NS
6.11 Warp
(only process control data required)
" 50 µm " 50 µm for wafers
without backseal
" 100 µm for wafers
with backseal
" 50 µm for wafers
without backseal
" 100 µm for wafers
with backseal
6.12 Sori NS NS NS
6.13 Flatness/Global NS NS NS
6.14B Flatness/Site (See Note 4) SFSR " 0.13 µm SFSR " 0.13 µm SFSR " 0.13 µm
7.0 FRONT SURFACE CHEMISTRY
7.1 Surface Metal Contamination
See Note 9
Sodium " 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Aluminum " 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
Potassium " 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Chromium " 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Iron " 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Nickel " 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Copper " 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
Zinc " 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
" 1 × 10
11
/cm
2
Calcium " 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
" 1.3 × 10
10
/cm
2
8.0 FRONT SURFACE CRITERIA
8.1A Scratches (macro) none none none
8.1B Scratches (micro) " 10 mm (total length) " 10 mm (total length) " 10 mm (total length)