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SEMI M18-0704 © SEMI 1990, 2004 8 Mea surement Po sition SEMI MF81 Fig. 1 - [ ]A, [ ]B, [ ]C, [ ]D; [ ] JEIDA 18; [ ]DIN 50435 Calculation Method [ ]SEMI MF81; [ ]JEIDA 18; [ ]D IN 50435; [ ]Other: 2.3 Resistivity Striat…

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SEMI M18-0704 © SEMI 1990, 2004 7
7 Testing Level and Certification
7.1 Material ordered using this format shall be tested
and/or certified to the limits set forth in the individual
criteria.
7.2 The actual testing level, whether the test is
performed on all wafers, a sample of the wafers, special
test pieces representing all portions of the material, or a
sample of the test pieces, may be specified using this
format.
7.3 In some cases, the material may be certified as
“capable of meeting” certain requirements. In this
context, the supplier is not required to perform the tests
outlined in this format. However, if the purchaser
performs the test and the material fails to meet the
requirement, the material may be subject to rejection.
8 EDI Codes and Sub-Parameter Codes
8.1 The EDI Codes for each parameter are listed in the
following Table. Where necessary for clarity,
additional sub-parameters are listed. These sub-
parameter identify a specific measurement technique or
method to be used.
8.2 If additional codes are required in the future, they
will be added to the table, beginning with the next
available EDI code identifier. This will allow the table
to be rearranged for clarity while maintaining unique
and consistent EDI codes for existing parameters.
Table 2 provides a numerically sorted list of the EDI
Codes.
SEMI Silicon Wafer Specification Form For Order Entry (Page 1)
Part 1 General Information
I
TEM
S
I
NFORMATIO
N
D
ate:
Customer Name
Purchase Order Number
Line Number
Item Number
General Specification Number
Revision Level
Part Number/Revision
Part 2 Polished Wafer
CUSTOMER:
P
ART NUMBER: REVISION
D
ATE:
TESTING LEVEL EDI Sub
WAFER TEST PIECE
Code Param
REQUIRED
ITEM SPECIFICATION
100% SAMP
LE
100% SAMP
LE
ID ID
1. GENERAL CHARACTERISTICS
♦
1.1 Growth Method [ ]Cz [ ]FZ [ ]MCz 100001
♦
1.2 Crystal Orientation [ ](100) [ ] (111) [ ] ( ) 100002
♦
1.3 Conductivity Type [ ]p [ ]n 100003
♦
1.4 Dopant [ ]B [ ]Phos [ ]Sb [ ]As [ ]NTD 100004
1.5 Nominal Edge Exclusion
Distance for Fixed
Quality Area
Applies to Sections 6.10–6.14; 11 [ ]3 mm;
[ ]5 mm; [ ]Other__mm
Applies to Sections 7, 8, 12, 13 [ ]3 mm; [ ]5
mm; [ ]Other__mm (except edge defects)
100005
2. ELECTRICAL CHARACTERISTICS
♦
2.1 Resistivity
Nominal [ ] ± Tolerance [ ] Ω−cm
100006
Measurement Position [ ]Center Point; [ ]Other:
Measurement Method [ ]SEMI MF81; [ ]SEMI MF673; [ ]JIS H 612;
[ ]JEIDA 18; [ ]DIN 50431
2.2 Radial Resistivity
Variation (RRG)
Not greater than [ ]% 100007
SEMI M18-0704 © SEMI 1990, 2004 8
Measurement Position SEMI MF81 Fig. 1 - [ ]A, [ ]B, [ ]C, [ ]D;
[ ] JEIDA 18; [ ]DIN 50435
Calculation Method [ ]SEMI MF81; [ ]JEIDA 18; [ ]DIN 50435;
[ ]Other:
2.3 Resistivity Striations Not greater than [ ]% 100008
2.4 Minority Carrier
Lifetime
Greater than [ ]µs
100009
Test Method SEMI MF28 [ ]A, [ ]B; SEMI MF391 [ ]A,
[ ]B;
[ ]SEMI MF1388; [ ]SEMI MF1535; [ ]JEIDA
53;
[ ]JIS H604; [ ]DIN 50440; [ ]Other
3. CHEMICAL CHARACTERISTICS
3.1 Oxygen Concentration Nominal [ ] ± Tolerance [ ]; [ ] × 10
17
cm
-3
;
[ ]ppma
100010
Calibration Factor [ ]SEMI MF1188; [ ]ASTM F121(79);
[ ]ASTM F121(83); [ ] JEIDA 61;
[ ]DIN 50438/1; [ ]Other ____
Measurement Method IR (Interstitial): [ ] SEMI MF1188; [ ] SEMI
MF1619; [ ] JEIDA 61; [ ] DIN 50438-1
SIMS (Total): [ ]SEMI MF1366
[ ]GFA (Total)
3.2 Radial Oxygen Variation Not greater than [ ]% 100011
Measurement Position SEMI MF951 Plan [ ]A, [ ]B, [ ]B1, [ ]C, [ ]D;
[ ]Other:__
Calculation Method SEMI F951 Plan [ ]A, [ ]B, [ ]B1, [ ]C, [ ]D;
[ ] Other:__
3.3 Carbon Concentration Not greater than [ ] [ ]ppma; [ ] × 10
16
cm
-3
100012
Measurement Method [ ]SEMI MF1391; JEIDA 56; [ ]DIN 50438/2;
[ ]Other:____
3.4 Boron Concentration in
Heavily Doped n-type Si
Not greater than [ ] ppba 100013
4. STRUCTURAL CHARACTERISTICS
4.1 Dislocation Etch Pit
Density
[ ]Not greater than [ ]/cm
2
100014
4.2 Slip [ ]None [ ]Other ___ 100015
4.3 Lineage [ ]None [ ]Other ___ 100016
4.4 Twin [ ]None [ ]Other ___ 100017
4.5 Swirl [ ]Not greater than [ ]% of wafer area 100018
4.6 Shallow Pits Not greater than [ ]/cm
2
100019
4.7 Oxidation Induced
Stacking Faults (OSF)
Not greater than [ ]/cm
2
100020
Test Cycle ASTM F 416 Cycle-[ ]1 [ ]2 [ ]3;
[ ] SEMI MF 1727; [ ]Other:__
4.8 Oxide Precipitates
(BMD)
Range: [ ] to [ ]
Unit: [ ] cm
2
[ ] cm
3
100021
Test Cycle SEMI MF1239 [ ]A, [ ]B; [ ] Other:_____
4.9 Interstitial Oxygen
Reduction (∆O
I
)
Range: [ ] to [ ] [ ]ppma, [ ] × 10
17
cm
-3
100162
Test Cycle SEMI MF1239 [ ]A, [ ]B; [ ] Other:_____
5. WAFER PREPARATION CHARACTERISTICS
5.1 Wafer ID Marking [ ]None; [ ]SEMI M12; [ ]SEMI M13;
[ ]SEMI T1; [ ]SEMI T2; [ ] SEMI T7;
[ ]Other:_____
100022
SEMI M18-0704 © SEMI 1990, 2004 9
5.2 Front Surface Thin
Film(s) Appl
[ ]None [ ]Description: 100023
5.3 Denuded Zone [ ]None [ ]Description: 100024
5.4 Extrinsic Gettering
Treatment
[ ]None [ ]Description: 100025
5.5 Backseal [ ]None [ ]Description: 100026
5.6 Annealing [ ]None [ ]Description: 100027
6. MECHANICAL CHARACTERISTICS
THE ITEMS LISTED IN THIS SECTION MAY BE
6.01 [ ] Specified According to SEMI M1_____ 100028
OR SPECIFIED INDIVIDUALLY
♦
6.1 Diameter
1
Nominal [ ] ± Tolerance [ ] mm 100029
♦
6.2 Primary Flat
Length/Diameter Notch
Dimensions
1
[ ]SEMI M1._______; [ ]Other:___mm 100030
♦
6.3 Primary Flat/Notch
Orientation
1
[ ]SEMI M1._______; [ ]Other: 100031
♦
6.4 Secondary Flat Length
1
[ ]SEMI M1._______; [ ]Other:___mm; [
]None
100032
♦
6.5 Secondary Flat Location
1
[ ]SEMI M1._______; [ ]Other:___; [ ]None 100033
♦
6.6 Edge Profile
1
[ ]SEMI Standard [ ]Other:_____ 100034
♦
6.7 Thickness
1
Nominal [ ] ± Tolerance [ ] µm 100035
Method [ ]SEMI MF533; [ ]SEMI MF1530; [ ]JIS H
611;
[ ]DIN 50441/1; [ ]Other
6.8 Thickness Variation
(TTV)
1
[ ]SEMI M1._______; [ ]Other: [ ] µm 100036
Measurement Position [ ]SEMI MF533; [ ]SEMI MF657; [ ]SEMI
MF1530; [ ]JIS H 611; [ ]DIN 50441/1; [
]Other:_____
♦
6.9 Surface Orientation [ ]0.00 ± 0.50; [ ]2.50 ± 0.50; [ ]4.00 ± 0.50;
[ ] Other:_____
100037
Method [ ]SEMI MF26; [ ]JEIDA 18; [ ]DIN 50433;
[ ]Other:_____
6.10 Bow
1
[ ]SEMI M1._______; [ ]Other:___ µm 100038
Method [ ]SEMI MF534; [ ]JIS H 611; [ ]Other:_____
6.11 Warp
1
[ ]SEMI M1._______; [ ]Other: ___ µm
Method [ ]SEMI MF657; [ ]SEMI MF1390;
[ ]Other:_____
100039
100040
SEMI
MF657
SEMI
MF1390
6.12 Sori [ ]_______µm 100041
Method [ ] SEMI MF1451; [ ] JEIDA 43
6.13 Flatness/Global Acronym:
2
[ ] [ ] [ ] [ ] Value: [ ]µm
100042
Method [ ]SEMI MF1530;
[ ]DIN 50441/3; [ ]Other:_____