semi合集-English.pdf - 第5092页

SEMI M23.6-0703 © SEMI 2003 1 SEMI M23.6-0703 SPECIFICATION FOR ROUND 150 mm POLISHED MONOCRYSTALLINE INDIUM PH OSPHIDE WAFERS (NOTCHED) This specification was technically approved by the Global Com pound Semiconductor M…

SEMI M23.5-1000 © SEMI 20001

SEMI M23.5-1000

SPECIFICATION FOR ROUND 100 mm POLISHED

MONOCRYSTALLINE INDIUM PHOSPHIDE WAFERS FOR

ELECTRONIC AND OPTOELECTRONIC DEVICE APPLICATIONS (V-

GROOVE OPTION)

This specification was technically approved by the Global Compound Semiconductor Committee and is the

direct responsibility of the North American Compound Semiconductor Committee. Current edition approved

by the North American Regional Standards Committee on August 28, 2000. Initially available at

www.semi.org September 2000; to be published October 2000.

NOTE: The complete specification for this product includes all requirements of SEMI M23.

Table 1 Dimension and Tolerance Requirements

Property Dimension Tolerance Units

DIAMETER (See NOTE 1.) 100.0 ± 0.5 mm

THICKNESS, CENTER POINT 625 ± 25 µm

PRIMARY FLAT LENGTH 32.5 ± 2 mm

SECONDARY FLAT LENGTH 18 ± 2 mm

NOTE 1: The diameter standard means that the dimension is centered to this value.

Table 2 Orientation and Flat Location Requirements

Property Requirement

PRIMARY FLAT ORIENTATION

)101( ± 0.5° (see NOTE 1) under a Phosphorus facet. The primary flat shall be

perpendicular to the “V” etch figure. (See NOTE 2.)

SECONDARY FLAT ORIENTATION (011), 90°± 5° counterclockwise from the primary flat.

SURFACE ORIENTATION (See NOTE 3.)

A. { 100} (see

NOTE 1) ± 0.5° (See Figure 2 in SEMI M23.)

B. { 100} (see NOTE 1) off 2° ± 0.5° toward the (110) plane which is between the

primary and secondary flats (See Figure 4 in SEMI M23.)

ORTHOGONAL MISORIENTATION ± 5° (See Figure 5 in SEMI M23.)

NOTE 1: See Table 1 in SEMI M23.

NOTE 2: See Figure 2 in SEMI M23, which shows the orientation of the V-groove figure relative to crystallographically anisotropic pits (see

NOTE 4).

NOTE 3: The frame of reference is the (100) plane of the crystal. It is the wafer normal that is tilted toward the (110) plane of the crystal.

NOTE 4: Relating to the etchant used for identifying V-groove and/or dovetail direction, see reference: “HBr-K

- H

O etching system for

indium phosphide” J.L.Weyher, et al. Materials Science and Engineering B28 (1994) 488–492.

NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish appropriate safety and health practices and determine the

applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability

of the standards set forth herein for any particular application. The determination of the suitability of the standard is

solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,

product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are

subject to change without notice.

The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted

material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and

the risk of infringement of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M23.6-0703 © SEMI 2003 1

SEMI M23.6-0703

SPECIFICATION FOR ROUND 150 mm POLISHED

MONOCRYSTALLINE INDIUM PHOSPHIDE WAFERS (NOTCHED)

This specification was technically approved by the Global Compound Semiconductor Materials Committee

and is the direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current

edition approved by the Japanese Regional Standards Committee on April 28, 2003. Initially available at

www.semi.org June 2003; to be published July 2003.

1 Purpose

1.1 This specification defines properties of 150 mm

monocrystalline InP substrates, in agreement with

presently established industry practice. It uniquely

defines those mechanical parameters that do not need,

for technical reasons, a choice of different values.

2 Scope

2.1 The parameters defined include the values and

tolerances of wafer diameter, thickness and surface

orientation. The position and depth of the notch and

laser marking are also specified.

2.2 The complete specification of this product includes

the requirements of SEMI M23, excluding those that

are not relevant to this specification (e.g., flat

positions).

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Referenced Standards

3.1 SEMI Standards

SEMI M12 — Specification for Serial Alphanumeric

Marking of the Front Surface of Wafers

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

4 Terminology

None.

5 Physical Requirements

Table 1 Physical Requirements

Property Specification Tolerance Unit Reference

WAFER

Diameter 150.0

± 0.5

Thickness, center point 675 ± 25 µ m

Surface orientation A (100) 0.5 max. degrees Figure 2

Surface orientation B

Tilt 2 off (100) towards (110) ± 0.5 degrees Figure 3

Orthogonal misorientation 0 ± 5 max. degrees Figure 4

NOTCH

Orientation [010] ± 2 degrees Figure 1

Depth 1.00 + 0.25, -0.00 mm Figure 5

Opening angle 90 + 5, -1 degrees Figure 5

LASER MARKING

Surface front side

Position adjacent to notch Figure 6

Mandatory content check characters SEMI M12

(111)

(011)

(001)

(010)

(110)

(101)

(001)

(011)

(110)

_ _

(111)

(011)

(101)

(100)

_ _

(011)

Etch Pit

(010)

Cross Section of Etch Figure

on Front Face of Wafer

Figure 1

Diagram Shows a InP Wafer with Notch