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SEMI E2.3-93 © SEMI 1993, 2003 2 NOTICE: T hese standards do not purport to address safety issues , if any, associated with their use. It is the responsibility of the user of these standards to establish appropriate safe…
SEMI E2.3-93 © SEMI 1993, 2003 1
SEMI E2.3-93 (Withdrawn 1103)
STANDARD FOR 100 mm QUARTZ AND HIGH TEMPERATURE
WAFER CARRIERS
This standard was technically reapproved by the Physical Interfaces & Carriers Committee and is the direct
responsibility of the North American Physical Interfaces & Carriers Committee. Current edition approved by
the North American Regional Standards Committee in October 1998. Initially available at www.semi.org
February 1999; to be published February 1999. Originally published in 1993; previous published revision in
1996.
NOTICE: This document was balloted and approved for withdrawal in 2003.
NOTE: Terms and Dimensions used in this specification are defined in SEMI E2.
Description Style 1 — Non-Contiguous (Figure 1) Style 2 — Contiguous (Figure 2)
Symbol
A Wafer Height 57.0 mm ± 0.5 mm (2.25 in. ± 0.020 in.) 57.0 mm ± 0.5 mm (2.25 in. ± 0.020 in.)
B Base Width 39.1 mm ± 0.25 mm
(1.54 in. ± 0.010 in.)
39.1 mm ± 0.25 mm
(1.54 in. ± 00.010 in.)
D Lift Access Height 17.8 mm (0.70 in.) min. 17.8 mm (0.70 in.) min.
E Lift Access Spacing 134.5 ± 0.50 mm (5.296 in. ± 0.02 in.) 109.2 mm ± 0.5 mm (4.30 in. ± 0.02 in.)
F Lift Access Opening 8 mm I.D. (3.15 in. I.D.) min. 8 mm I.D. (3.15 in. I.D.) min.
J Pocket Size (DIA) 101.6 mm ± 0.5 mm (4.00 in. ± 0.020 in.) 101.6 mm ± 0.5 mm (4.00 in. ± 0.020 in.)
K Base Side to Wafer Centerline 1/2 B ± 0.25 mm (0.01 in.) 1/2 B ± 0.25 mm (0.01 in.)
L Carrier Region
150° max. 125° max.
P Separation — Wafer to Wafer ≥ 10% H ≥ 10% H
25 Capacity
C Base Length 145.7 mm ± 0.076 mm
(5.736 in. ± 0.003 in.)
119.00 ± 0.076 mm
(4.688 in. ± 0.003 in.)
G Base End to 1st Slot 15.7 mm ± 0.076 mm
(0.618 in. ± 0.003 in.)
2.390 mm ± 0.076 mm
(0.094 in. ± 0.003 in.)
H Slot Spacing
(non-accumulative)
4.76 mm ± 0.051 mm
(0.1875 in. ± 0.002 in.)
4.76 mm ± 0.051 mm
(0.1875 in. ± 0.002 in.)
I End Slot to End Slot 114.3 mm ± 0.076 mm
(4.500 in. ± 0.003 in.)
114.3 mm ± 0.076 mm
(4.500 in. ± 0.003 in.)
50 Capacity
C Base Length 145.7 mm ± 0.076 mm
(5.736 in. ± 0.003 in.)
121.46 mm ± 0.076 mm
(4.782 in. ± 0.003 in.)
G Base End to 1st Slot 14.50 mm ± 0.076 mm
(0.571 in. ± 0.003 in.)
2.390 mm ± 0.076 mm
(0.094 in. ± 0.003 in.)
H Slot Spacing
(non-accumulative)
2.381 mm ± 0.051 mm
(0.09375 in. ± 0.002 in.)
2.381 mm ± 0.051 mm
(0.09375 in. ± 0.002 in.)
I End Slot to End Slot 116.69 ± 0.076 mm
(4.594 in. ± 0.003 in.)
116.69 mm ± 0.076 mm
(4.594 in. ± 0.003 in.)
NOTE 1: 25 capacity slot spacing is derived from SEMI E1.2.
NOTE 2: 50 capacity slot spacing is SEMI E1.2 divided by 2; to insure compatibility for wafer transfer between Plastic & High Temperature
Carriers, the U.S. customary dimension is carried out to 5 decimals to eliminate accumulation in rounding error when multiplying times 49 spaces
to achieve I.
SEMI E2.3-93 © SEMI 1993, 2003 2
NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish appropriate safety and health practices and determine the
applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability
of the standards set forth herein for any particular application. The determination of the suitability of the standard is
solely the responsibility of the user. Users are cautioned to refer to manufacturer's instructions, product labels,
product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are
subject to change without notice.
The user's attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI E2.4-93 © SEMI 1993, 2003 1
SEMI E2.4-93 (Withdrawn 1103)
STANDARD FOR 125 mm QUARTZ AND HIGH TEMPERATURE
WAFER CARRIERS
This standard was technically reapproved by the Physical Interfaces & Carriers Committee and is the direct
responsibility of the North American Physical Interfaces & Carriers Committee. Current edition approved by
the North American Regional Standards Committee in October 1998. Initially available at www.semi.org
February 1999; to be published February 1999. Originally published in 1993; previous published revision in
1996.
NOTICE: This document was balloted and approved for withdrawal in 2003.
NOTE: Terms and Dimensions used in this specification are defined in SEMI E2.
Description Style 1 — Non-Contiguous (Figure 1) Style 2 — Contiguous (Figure 2)
Symbol
A Wafer Height 69.1 mm + 0.5 mm (2.72 in. + 0.02 in.) 69.1 mm + 0.5 mm (2.72 in. + 0.02 in.)
B Base Width 46.0 mm + 0.25 mm (1.80 in. + 0.01 in.) 46.0 mm + 0.25 mm (1.80 in. + 0.01 in.)
D Lift Access Height 17.8 mm (0.70 in.) min. 17.8 mm (0.70 in.) min.
E Lift Access Spacing 134.5 mm + 0.50 mm
(5.296 in. + 0.02 in.)
109.2 mm + 0.5 mm
(4.30 in. ± 0.02 in.)
F Lift Access Opening 8 mm I.D. (0.315 in. I.D.) min. 8 mm I.D. (0.315 in. I.D.) min.
J Pocket Size (DIA) 4.935 in. min. same
K Base Side to Wafer Centerline 1/2 B ± 0.25 mm (0.01 in.) same
L Carrier Region
150° max. 125° max.
P Separation — Wafer to Wafer ≥ 10% H ≥ 10% H
25 Capacity
C Base Length 145.7 mm ± 0.076 mm
(5.736 in. ± 0.003 in.)
119.00 mm ± 0.076 mm
(4.688 in. ± 0.003 in.)
G Base End to 1st Slot 15.7 mm ±0.076 mm
(0.618 in. ±0.003 in.)
2.390 mm ± 0.076 mm
(0.094 in. ± 0.003 in.)
H (See
NOTE 1.)
Slot Spacing
(non-accumulative)
4.76 mm ± 0.51 mm
(0.1875 in. ±0.002 in.)
4.76 mm ± 0.51 mm
(0.1875 in. ± 0.002 in.)
I End Slot to End Slot 114.3 mm ± + 0.076
(4.500 in. ± 0.003 in.)
114.3 mm ± + 0.076 mm
(4.500 in. ± 0.003 in.)
50 Capacity
C Base Length 145.7 mm ± 0.076 mm
(5.736 in. ± 0.003 in.)
121.46 mm ± 0.076 mm
(4.782 in. ± 0.003 in.)
G Base End to 1st Slot 14.50 mm ± 0.076 mm
(0.571 in. ± 0.003 in.)
2.390 mm ± 0.076 mm
(0.094 in. ± 0.003 in.)
H (See
NOTE 2.)
Slot Spacing
(non-accumulative)
2.381 mm ± 0.051 mm
(0.09375 in. ± 0.002 in.)
2.381 mm ± 0.051 mm
(0.09375 in. ± 0.002 in.)
I End Slot to End Slot 116.69 ± 0.076 mm
(4.594 in. ± 0.003 in.)
116.69 mm ± 0.076 mm
(4.594 in. ± 0.003 in.)
NOTE 1: 25 capacity slot spacing is derived from SEMI E1.3 and E1.4.
NOTE 2: 50 capacity slot spacing is SEMI E1.3 divided by 2 or E1.4 divided by 2; to insure compatability for wafer transfer between Plastic &
High Temperature Carriers, the U.S. customary dimension is carried out to 5 decimals to eliminate accumulation in rounding error when
multiplying by 49 spaces to achieve I.