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SEMI MF1392-1103 © SEMI 2003 17 RELATED INFORMATION 2 SAMPLE DATA SHEETS NOTICE: This related in formation is not an offi cial part of SEMI MF1392. It was developed durin g the original development of the document. This …
SEMI MF1392-1103 © SEMI 2003 16
RELATED INFORMATION 1
RECOMMENDED WAFER SURFACE TREATMENTS
NOTICE: This related information is not an official part of SEMI MF1392. It was developed during the original
development of the document. This related information was approved for publication by full letter ballot on July 12,
2003.
R1-1.1 The following surface treatments have been
found to result in satisfactory surfaces under a variety
of conditions and are recommended for use in
connection with this test method. Other surface
treatments may also be satisfactory and may be used if
agreed upon between the parties to the test.
R1-1.2 Place the wafer to be treated in a center slot of a
hydrofluoric acid cassette.
R1-1.3 Dip in HF for 30 s (concentrated HF) or 5 min
(dilute HF).
R1-1.4 Rinse in water for 10 min.
R1-1.5 For p-type wafers, spin dry in an air
atmosphere. If subsequent measurements are unstable,
heat treat the wafer for 30 min at 120 ± 10° C in air.
R1-1.6 For n-type wafers, transfer the wafer
immediately from the hydrofluoric acid cassette to a
center slot of a hydrogen peroxide cassette (Caution—
see Note 1), and continue with the following:
R1-1.6.1 Immerse in 15% H
2
O
2
for 10 min at 70° to
90° C.
R1-1.6.2 Rinse in water for 2 min.
R1-1.6.3 Spin dry in an air atmosphere (Note 1).
NOTE 1: Alternatively, the wafers may be dried by blow
drying with a filtered nitrogen blow-off gun while holding the
wafer at a 45° angle with the lower edge of the wafer resting
on a clean-room wipe.
SEMI MF1392-1103 © SEMI 2003 17
RELATED INFORMATION 2
SAMPLE DATA SHEETS
NOTICE: This related information is not an official part of SEMI MF1392. It was developed during the original
development of the document. This related information was approved for publication by full letter ballot on July 12,
2003.
R2-1.1 The following are examples of data sheet formats for manual collection and manual or off-line analysis of
C-V data. Figure R2-1 is for data to be analyzed by the Incremental Method and Figure R2-2 is for data to be
analyzed by the Curve-Fitting Method. The data listed must be stored in a format such that it can be retrieved if the
system employed performs the calculations internally.
SEMI MF1392-1103 © SEMI 2003 18
NOTE: Items marked with an asterisk (*) are required only for referee measurements.
Figure R2-1
Example of Format for Capacitance-Voltage Data and Calculations Using the Incremental Method