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SEMI M24-1103 © SEMI 1994, 2003 1 SEMI M24-1103 SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON PREMIUM WAFERS This specification was technically approved by th e Global Silicon Wafer Committee and is the direct respo…

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SEMI M23.6-0703 © SEMI 2003 6
Figure 5
Notch Dimensions
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Character Window Location
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SEMI M24-1103 © SEMI 1994, 2003 1
SEMI M24-1103
SPECIFICATION FOR POLISHED MONOCRYSTALLINE SILICON
PREMIUM WAFERS
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the Japanese Silicon Wafer Committee. Current edition approved by the Japanese Regional
Standards Committee on August 8, 2003. Initially available at www.semi.org October 2003; published
November 2003. Originally published in 1994; previously published November 2001.
1 Purpose
1.1 This document specifies requirements for virgin
silicon premium wafers with nominal diameter from
150 mm to 300 mm used for particle counting, metal
contamination monitoring, and measuring pattern
resolution in the photolithography process in
semiconductor manufacturing. The premium wafer has
tighter specification values in some specific items for
the specific usage, and looser or equal specification
values in other items than a prime wafer has.
2 Scope
2.1 This specification classifies premium wafers
according to surface condition and dimensional
tolerances. Premium wafer classifications are
summarized in Table 1.
2.2 Specification values are determined by the use for
which the wafers are intended.
2.3 This specification provides premium wafers that
can be used to test and evaluate leading edge device
process.
2.4 For referee purposes, SI (System International)
units shall be used.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M1 — Specifications for Polished Mono-
crystalline Silicon Wafers
SEMI M18 — Format for Silicon Wafer Specification
Form for Order Entry
SEMI M20 — Specification for Establishing a Wafer
Coordinate System
SEMI M25 — Specification for Silicon Wafers for
Calibration of Light Point Defect Wafer Inspection
Systems with Respect to the Diameter of Polystyrene
Latex Spheres
3.2 ANSI Standard
1
ANSI/ASQC Z1.4 — Sampling Procedures and Tables
for Inspection by Attributes
3.3 ASTM Standards
2
D 523 — Standard Test Method for Specular Gloss
E 122 — Standard Practice for Choice of Sample Size
to Estimate the Average Quality of a Lot or Process
F 26 — Standard Test Methods for Determining the
Orientation of a Semiconductive Single Crystal
F 42 — Standard Test Methods for Conductivity Type
of Extrinsic Semiconducting Materials
F 84 — Standard Test Method for Measuring
Resistivity of Silicon Wafers with an In-Line Four-
Probe Array
F 154 — Standard Practices and Nomenclature for
Identification of Structures and Contaminants Seen on
Specular Silicon Surfaces
F 391 — Standard Test Methods for Minority-Carrier
Diffusion Length in Extrinsic Semiconductors by
Measurement of Steady-State Surface Photovoltage
F 523 — Standard Practice for Unaided Visual
Inspection of Polished Silicon Wafer Surface
F 533 — Standard Test Method for Thickness and
Thickness of Variation of Silicon Wafers
F 534 — Standard Test Method for Bow of Silicon
Wafers
F 613 — Standard Test Method for Measuring
Diameter of Semiconductor Wafers
1 American National Standards Institute, Headquarters: 1819 L
Street, NW, Washington, DC 20036, USA. Telephone: 202.293.8020;
Fax: 202.293.9287, New York Office: 11 West 42nd Street, New
York, NY 10036, USA. Telephone: 212.642.4900; Fax:
212.398.0023, Website: www.ansi.org
2 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, Pennsylvania 19428-2959, USA.
Telephone: 610.832.9585, Fax: 610.832.9555, Website:
www.astm.org
SEMI M24-1103 © SEMI 1994, 2003 2
F 657 — Standard Test Method for Measuring Warp
and Total Thickness Variation on Silicon Wafers by
Noncontact Scanning
F 671 — Standard Test Method for Measuring Flat
Length on Wafers of Silicon and Other Electronic
Material
F 673 — Standard Test Methods for Measuring
Resistivity of Semiconductor Slices or Sheet Resistance
of Semiconductor Films with a Noncontact Eddy-
Current Gage
F 847 — Standard Test Methods for Measuring
Crystallographic Orientation of Flats on Single Crystal
Silicon Wafers by X-Ray Techniques
F 928 — Standard Test Methods for Edge Contour of
Circular Semiconductor Wafers and Rigid Disk
Substrates
F 978 — Standard Test Method for Characterizing
Semiconductor Deep Levels by Transient Capacitance
Techniques
F 1049 — Standard Practice for Shallow Pit Detection
on Silicon Wafers
F 1152 — Standard Test Method for Dimensions of
Notches on Silicon Wafers
F 1188 — Standard Test Method for Interstitial Atomic
Oxygen Content of Silicon by Infrared Absorption
F 1239 — Standard Test Methods for Oxygen
Precipitation Characterization of Silicon Wafers by
Measurement of Interstitial Oxygen Reduction
F 1241 — Standard Terminology of Silicon
Technology
F 1390 — Standard Test Method for Measuring Warp
on Silicon Wafers by Automated Noncontact Scanning
F 1391 — Standard Test Method for Substitutional
Atomic Carbon Content of Silicon by Infrared
Absorption
F 1451 — Standard Test Method for Measuring Sori on
Silicon Wafers by Automated Noncontact Scanning
F 1526 — Standard Test Method for Measuring Surface
Metal Contamination on Silicon Wafers by Total
Reflection X-ray Fluorescence Spectroscopy
F 1530 — Standard Test Method for Measuring
Flatness, Thickness, and Thickness Variation on Silicon
Wafers by Automated Noncontact Scanning
F 1535 — Standard Test Method for Carrier
Recombination Lifetime in Silicon Wafers by
Noncontact Measurement of Photoconductivity Decay
by Microwave Reflectance
F 1617 — Standard Test Method for Measuring Surface
Sodium, Aluminum, and Potassium on Silicon and EPI
Substrates by Secondary Ion Mass Spectroscopy
F 1619 — Standard Test Method for Measurement of
Interstitial Oxygen Content of Silicon Wafers by
Infrared Absorption Spectroscopy with p-Polarized
Radiation Incident at the Brewster Angle
F 1620 — Standard Practice for Calibrating a Scanning
Surface Inspection System Using Monodisperse
Polystyrene Latex Spheres Deposited on Polished or
Epitaxial Surfaces
F 1621 — Standard Practice for Determining Positional
Accuracy Capabilities of a Scanning Surface Inspection
System
F 1725 — Guide for Analysis of Crystallographic
Perfection of Silicon Ingots
F 1726 — Guide for Analysis of Crystallographic
Perfection of Silicon Wafers
3.4 DIN Standards
3
50431 — Measurement of the Electrical Resistivity of
Silicon or Germanium Single Crystals by Means of the
Four-Point-Probe Direct Current Method with Colinear
Four-Probe Array
50432 — Determination of the Conductivity Type of
Silicon or Germanium by Means of Rectification Test
or Hot-Probe
50433/1 — Determination of the Orientation of Single
Crystals by Means of X-Ray Diffraction
50433/2 — Determination of the Orientation of Single
Crystals by Means of Optical Reflection Figure
50433/3 — Determination of the Orientation of Single
Crystals by Means of Laue Back Scattering
50434 — Determination of Crystal Defects in
Monocrystalline Silicon Using Etching Techniques on
{111} and {100} Surfaces
50435 — Determination of the Radial Resistivity
Variation of Silicon or Germanium Slices by Means of
a Four-Point-DC-Probe
50438/1 — Determination of Impurity Content in
Silicon by Infrared Absorption: Oxygen
50438/2 — Determination of Impurity Content in
Silicon by Infrared Absorption: Carbon
50438/3 — Determination of Impurity Content in
Silicon by Infrared Absorption: Boron and Phosphorus
3 Deutsches Institut für Normung e.V., Available from Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-10787 Berlin, Germany, Website:
www.din.de