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SEMI F50-0200 © SEMI 2000 7 factory and the electric utility at the point of common coupling (also kn own as the electrical service poin t). Many c ustom power option s include som e e nergy storage t o ride throu gh the…

SEMI F50-0200 © SEMI 2000 6
Impulse Insulation Levels
(BIL) are just some of the
ways that events can be eliminated.
6.4.3 Service Configurations
6.4.3.1 Determine the factors that are fixed for the
purposes of improvement development and evaluation.
Some examples include, but are not limited to, physical
location of site, utility system configuration beyond the
immediate vicinity of the site, and electric rate
structures.
6.4.3.2 Once the electrical reliability and power
quality needs of a semiconductor factory are identified
and the reliability and power quality of the electrical
network in the area has been characterized, electric
utility service configuration can be considered. The
electric utility and the semiconductor manufacturer
should jointly develop a plan that balances reliability
and power quality. This plan should consider the
following service configuration options.
6.4.3.3 High voltage service configura tions.
6.4.3.3.1 Utility electrical service configurations have
a significant effect on the levels of power quality and
reliability. Semiconductor manufacturing facilities can
typically derive the highest service quality and
reliability from electrical service provided at the highest
voltage level. By bringing service to the semiconductor
factory from the highest available voltage system,
semiconductor facilities can eliminate their exposure to
electrical disturbances on lower voltage systems.
Seldom are disturbances that result from events
originating in lower voltage systems transferred into the
higher voltage systems to any significant degree.
Utility industry studies have indicated approximately
60−75% fewer voltage sag events (below 70% of
nominal) on the high voltage systems.
6.4.3.3.2 For plants with loads greater than 10 MW,
the highest voltage available is usually service at a
voltage between 69 kV and 345 kV. Voltages above
this range, while widely used by utilities, are not
usually economical to adapt to loads less than 60 MW
and may require lengthy regulatory approvals. If new
overhead power lines are required, environmental and
public issues associated with locating the lines may
reduce access to higher voltage lines.
6.4.3.4 Redundancy.
6.4.3.4.1 All on-site facilities and internal factory
distribution should have at least N+1 component
redundancy. Where N is the number of components
required to operate for maximum loading conditions
and +1 indicates a single additional component that will
operate to maintain the system capability in the event
that one of the original components is out-of-service. If
the plant is to be operated with no annual shutdowns for
maintenance, then the system should be designed with
enough redundancy to maintain every component in the
plant without dropping service to any load. This
requires at least a dual feed system that originates with
two or more utility sources and continues throughout
the semiconductor factory with appropriate transfer
schemes to keep the loads energized at all times and to
transfer loads without interruptions.
6.4.3.4.2 The most reliable service is one where there
are multiple sources connected in a network to the
semiconductor factory. This allows for adequate power
supply, even if one of the sources fails. If a network is
not available, a dual feed system can be configured to
provide an immediate transfer to the backup system in
the case of primary source failure, reducing outage time
to near zero. Additionally, if the two sources are
independent, a static transfer switch may increase
quality to a level higher than that of a network. If only
one source is available to a semiconductor factory with
a load of less than five megawatts, an alternative is on
site generation combined with a voltage sag ride-
through system.
6.4.3.5 Minimize exposure.
6.4.3.5.1 When choosing source configurations, it is
important to consider exposure at the semiconductor
factory site. The more line length the factory is
connected to, the more exposure there is.
a) It might not be desirable to have three lines serving
the plant if one is a long line that is prone to
failures. As a rule of thumb, more than three lines
connected in a network may reduce quality without
adding significantly to reliability.
b) If service is taken from a distribution class circuit,
then consider purchasing a so-called express or
dedicated feeder from the utility to isolate the plant
from neighboring facilities.
c) Review the line routes with the utility and consider
changes to reduce exposures, such as: where the
poles are vulnerable to being struck by vehicles, or
where trees are growing close to the transmission
lines.
6.4.4 Power Enhancements Technologies
6.4.4.1 All disturbances will not be eliminated from
the utility grid. In order to achieve the next step in
plant protection, it may be necessary to implement
some type of custom power option. Custom power is
so called because it is thought to be a custom solution
tailored to the needs of the process and the unique
situation of the site. Custom power options usually
involve some type of power enhancement and
conditioning system. These power electronics systems
are most often connected between the semiconductor

SEMI F50-0200 © SEMI 20007
factory and the electric utility at the point of common
coupling (also known as the electrical service point).
Many custom power options include some energy
storage to ride through the disturbance, but they are
usually designed to carry the factory through only
momentary interruptions. In fact, for large factories
(>10 MW) some available ride-through systems only
operate to boost the voltage during sags and will not
carry the factory site through even short outages. The
trade-off is cost versus protection. The systems should
be economically evaluated as well as matched
technically to the needs of the site.
6.4.4.2 Electric utility provided custom power options
should be balanced against factory system voltage sag
immunity covered in industry guide for factory systems
voltage sag immunity.
6.5 Select and Implement Improvements
6.5.1 Both the electric utility and the semiconductor
manufacturer should agree criteria methodology for
prioritizing improvements. The following are examples
of prioritization criteria.
• Expected frequency of disturbances.
• Impact of fault on electric utility and
semiconductor processing.
• Relative cost of system improvement.
• Ability of action to reduce effects.
6.5.2 Select improvement to be implemented, identify
the schedules for installation, and define the new
system performance expectations.
6.5.3 Implement selected improvements.
6.5.4 With identified fault tracking and root cause
analysis processes electric utilities will be in a position
to communicate the cause of events, their corrective
actions, and the impact of improvements. Results will
be both immediate and long-term, but to ensure that the
continuous improvement process remains successful,
the impacts of improvements should be tracked. The
results of this tracking should provide feedback to the
continuous improvement process as a whole.
7 Related Documents
7.1 SEMI Standards
SEMI F42 — Test Method for Semiconductor
Processing Equipment Voltage Sag Immunity
SEMI F47 — Provisional Specification for
Semiconductor Processing Equipment Voltage Sag
Immunity
SEMI F49 — Guide for Semiconductor Factory
Systems Voltage Sag Immunity
SEMI E51 — Guide for Typical Facilities Services and
Termination Matrix
7.2 IEEE Standards
1
IEEE 141 IEEE Recommended Practice for Electric
Power Distribution for Industrial Plants
IEEE 446 — IEEE Recommended Practice for
Emergency and Standby Power Systems for Industrial
and Commercial Applications
IEEE 493 — IEEE Recommended Practice for the
Design of Reliable Industrial and Commercial Power
Systems
IEEE 1100 — IEEE Recommended Practice for
Powering and Grounding Sensitive Electronic
Equipment
IEEE 1250 — IEEE Guide for Service to Equipment
Sensitive to Momentary Voltage Disturbances
NOTE 3: As listed or revised, all documents cited shall be the
latest publications of adopted standards.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the guides set
forth herein for any particular application. The
determination of the suitability of the guide is solely the
responsibility of the user. Users are cautioned to refer
to manufacturer’s instructions, product labels, product
data sheets, and other relevant literature respecting any
materials mentioned herein. These guides are subject to
change without notice.
The user’s attention is called to the possibility that
compliance with this guide may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this guide, SEMI takes
no position respecting the validity of any patent rights
or copyrights asserted in connection with any item
mentioned in this guide. Users of this guide are
expressly advised that determination of any such patent
rights or copyrights, and the risk of infringement of
such rights, are entirely their own responsibility.

SEMI F50-0200 © SEMI 2000 8
RELATED INFORMATION 1
VOLTAGE SAG PERFORMANCE AT SEMICONDUCTOR FACTORY
SITES
NOTE: This related information is not an official part of
SEMI F50 and was derived from the work of the originating
task force. This related information was approved for
publication by full letter ballot procedures on December 15,
1999. Determination of the suitability of the material is solely
the responsibility of the user.
R1-1 Typical Electric Utility System
Performance
R1-1.1 Although most large semiconductor sites are
served from dedicated substations, data collected from
utility (medium-voltage) distribution circuits can be
useful in establishing a baseline for electric utility
system performance. As part of the EPRI*
2
Distribution Power Quality (DPQ) study, data was
collected for a two-year period from approximately 300
different BMI PQNode monitors. These monitors were
located on 100 different feeders at 24 geographically
dispersed utilities. The power quality database created
in conjunction with this study is probably the most
extensive in existence. The data derived from this
study provides a statistically based assessment of the
level of power quality on electric utility distribution
circuits (voltage range from 4.16kV to 34.5kV).
R1-1.2 Almost every category of power quality data
was collected in the DPQ study, however, only voltage
sag and interruption data is assumed to be pertinent to
this activity. In the DPQ study, a voltage sag event was
initiated when the rms voltage dropped below 95% of
nominal for one cycle (data analysis was performed
only for events with magnitudes less than or equal to
90%). An interruption event was initiated when the
voltage dropped below 10% of nominal for 120
seconds. Although waveforms were captured for most
sag and interruption events, almost all of the data
analysis was performed on the basis of minimum
voltage magnitude (as a percentage on nominal) and
maximum duration during the event.
R1-1.3 DPQ Key Results
• The average interruption rate per site, per month
was approximately 0.5.
• The average sag rate per site, per month was
approximately 4 (10% < V < = 90%).
• The ratio of voltage sags to interruptions was
approximately 10:1.
2 Electric Power Research Institute, Inc., 3412 Hillview Ave., Palo
Alto, CA 94304-1395, USA
• Almost all voltage sag events have only a single
component.
• Most voltage sags had duration of less than 10
cycles.
R1-1.4 The Figure R1-1 represents a summary of the
voltage sag and interruption data in a contour format.
The contour lines on the graph represent the expected
number of disturbance events that are more severe
(longer or deeper) than the duration and magnitude
grid.
R1-2 Semiconductor Factory Site Disturbance
Data
R1-2.1 The DPQ study provides a baseline of the
power quality that exists on typical utility distribution
systems. However, only one of the semiconductor
manufacturing sites from which data was collected is
served from a typical utility distribution system.
Fourteen of the fifteen semiconductor sites surveyed
were served from dedicated substations owned by either
the customer or the utility. A comparison between
DPQ and semiconductor site data (for large facilities)
indicates that application of DPQ data would yield a
more restrictive tool tolerance standard. It is
recommended, therefore, that data from semiconductor
sites be utilized to develop an initial curve and that the
curve be validated against DPQ data.
R1-2.2 Voltage sag and interruption data was
accumulated for 14 different semiconductor
manufacturing sites geographically dispersed
throughout the United States. One additional site was
located outside of the United States. Data represented
in this report was provided by semiconductor
manufacturing companies.
R1-2.3 All of the data collected was in the form of
magnitude and duration point values. Although the
validity of characterizing the electrical system
performance is this manner has been questioned, it
remains the most common data format for disturbance
data.
R1-2.4 The coverage of the disturbance data is
typically represented as the product of number of years
(or months) monitored and the number of monitors
present. In this report, the unit for data coverage is
Monitor-Years. One Monitor-Year of data is the
quantity of data derived by one monitor for a one-year
period. The data for semiconductor sites covers 30.5