semi合集-English.pdf - 第5076页

SEMI M23-0703 © SEMI 1993, 2003 5 Table 1 Equiv alent Orientations — Dove -Tail Option Surface orientati on: (100) (100) ) 00 1 ( ) 00 1 ( Primary flat location: ) 11 0 ( (011) ) 1 01 ( ) 1 1 0 ( Secondary flat location:…

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SEMI M23-0703 © SEMI 1993, 2003 4
9.10 Resistivity of Semi-insulating Wafers —
Determined by ASTM Test Method F76 or SEMI M39
or DIN 50448.
9.11 Conductivity or Resistivity of Doped Wafers —
Determined by ASTM Test Method F76 or F84 or
F673.
9.12 Carrier concentration — Determined by ASTM
Test Method F76 or F1392 or F1393 or Electrochemical
CV
6
.
9.13 Conductivity Type — Determined by ASTM Test
Method F42 or F76.
9.14 Crystal Perfection — Determined by a method
agreed upon between the supplier and purchaser.
9.15 Edge Contouring — Determined by ASTM Test
Method F928.
9.16 Bow — Determined by ASTM Test Method F534
or a method agreed upon between the supplier and
purchaser.
9.17 Etch Pit Density (EPD) — Determined by DIN
Standard Test Method 50454-2
10 Standard Defect Limits
10.1 Limits are determined by an agreement between
supplier and purchaser.
11 Certification
11.1 A manufacturer' s or supplier' s certification that
the material was manufactured and tested in accordance
with this specification, together with a report of the test
results. A certification shall be furnished at the time of
shipment, upon the request of the purchaser in the
contract or order.
6 NOTE: Electrochemical CV test method has not been completed
but is in the process of being developed by the industry.
12 Packing and Marking
12.1 Special packing and marking requirements shall
be subject to agreement between the supplier and the
purchaser. Otherwise, all wafers shall be handled,
inspected, and packed with the best industry practices
to provide ample protection against damage during
shipment.
12.2 The wafers supplied under these specifications
shall be identified by appropriately labeling the outside
of each box or other container and each subdivision that
the wafers will be stored prior to further processing.
Identification shall include lot number and wafer
number. Per the agreement between the supplier and
purchaser, the following must be accessible from the lot
and wafer numbers: nominal diameter, conductive
dopant, orientation, resistivity, and EPD. Such
information shall be retained on file at the
manufacturer' s facility for at least one month or as
negotiated between vendor and user after that particular
lot has been accepted by the purchaser.
13 Related Documents
“HBr-K
2
Cr
2
O
7
– H
2
O etching system for indium phos-
phide” J.L. Weyher, et al. Materials Science and
Engineering B28 (1994) 488-492.
SEMI M23-0703 © SEMI 1993, 2003 5
Table 1 Equivalent Orientations — Dove-Tail Option
Surface orientation:
(100) (100)
)001( )001(
Primary flat location:
)110(
(011)
)101( )110(
Secondary flat location:
)110( )101(
(011)
)110(
For Surface orientation B, the off-orientation tilt direction
is toward: (See NOTE 1)
)011(
(110)
)101( )011(
Table 2 Equivalent Orientation — V-Groove Option
Surface orientation:
(100) (100)
)001( )001(
Primary flat location:
)101( )110( )110(
(011)
Secondary flat location:
(011)
)110( )110( )101(
For Surface orientation B, the off-orientation tilt direction
is toward:
(110)
)011( )011( )101(
The Symmetry of InP crystal structure allows other Miller indices to be used for identifying surface and flat orientations. This table lists various
possibilities that meet requirements for the above specific option.
NOTE 1: For Dove-Tail Option, any of the 110 tilt directions are considered equivalent.
SEMI M23-0703 © SEMI 1993, 2003 6
Figures 1A and 1B
Both Diagrams show an InP Wafer with Surface Orientation A and Flat Option Dove-Tail