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SEMI F47-0200 © SEMI 199 9, 2000 6 0 10 20 30 40 50 60 70 80 90 100 0.01 0.1 1 10 100 Duration of Voltage S ag in Seconds Perce nt of Equipment Nominal Voltage Area included in Specifi cation 0.05 to 1 second 0.02 Figure…

SEMI F47-0200 © SEMI 1999, 20005

RELATED INFORMATION 1

RELATIONSHIP TO OTHER ELECTRICAL STANDARDS

NOTE: This related information is not an official part of

SEMI F47 and is not intended to modify or supersede the

official standard. It has been derived from the work of the

originating task force. Determination of the suitability of

the material is solely the responsibility of the user.

R1-1 Basis for this Industry-Specific

Semiconductor Standard

R1-1.1 The Information Technology Industry

Council (ITIC) “CBEMA-curve,” contained in IEEE

446, IEEE 1100, and SEMI E51, was used as a

starting point in establishing recommended ride-

through limits. The following curve (see Figure R1-

1) was developed to define voltage sag ride-through

for use with semiconductor processing equipment.

Primarily due to testing limitations, only the portion

between 0.05 seconds (50 milliseconds) and 1.0

seconds was selected for inclusion in the

specification. As future test equipment, methods, and

data are developed the specified duration limits may

be expanded. Recommended voltage sag ride-

through capability limits from zero to 100 seconds

are included here for reference (see Figure R1-1).

While not currently included in this SEMI

specification the wider range should be considered

when designing equipment and selecting

components.

R1-1.2 Over voltage conditions also covered in the

ITIC CBEMA-curve contained in IEEE 446, IEEE

1100, and SEMI E51, are not considered in the scope

of this industry-specific specification primarily due to

the extremely low number of semiconductor

equipment interruptions caused by over voltage

events. While not in the scope of this specification,

over voltage conditions should not be ignored and

use of existing equipment protection techniques

should be continued (see SEMI E51 or IEEE 446 for

generic equipment over voltage ride-through

specifications).

R1-2 Relationship to Generic Electrical

Standards

R1-2.1 This SEMI standard is intended to be

coordinated with related SEMI, IEC and IEEE

standards. The relationship of this SEMI

specification to many other standards that address

equipment immunity, test methods, and safety was

considered in development of this specification. For

example, the emerging IEC Generic Immunity standard

for industrial environments currently published by

CENELEC as EN 50082-2 recommends a generic

equipment immunity limit for Europe. When published

by IEC, this standard will provide a generic equipment

voltage sag immunity limit. Another example is the US

National Fire Protection Association on Industrial

Machinery (NFPA 79), which sets a generic equipment

voltage sag immunity limit for the United States.

R1-2.2 These emerging generic limits were considered in

the establishment of ride-through limits for semiconductor

equipment. However, most generic equipment limits are

less stringent than the existing CBEMA-curve currently

referenced in SEMI E51. For most installations meeting

the CBEMA limits (a specification which was developed

for computer business equipment) still results in an

unacceptable number of semiconductor equipment

interrupts. Therefore, the requirements in this

international standard were developed to better suit the

semiconductor industry. While more stringent, this

industry-specific specification is not in conflict with

known generic equipment regulations from other regions

or generic equipment standards from other organizations.

R1-2.3 Another published IEC standard defines a generic

immunity test method for voltage sags (dips), IEC 61000-

4-11. This standard does not provide limits but does

provide a voltage sag test method for single-phase

equipment rated less than 16 amps. It has been

considered in defining voltage sag ride-through

parameters and it may provide an interim voltage sag

immunity test method. As noted in this document, a test

method for three-phase equipment greater than 16 amps is

being developed for use with semiconductor equipment.

R1-2.4 The generic type standards developed for

industrial or consumer equipment by organizations like

IEC, ITIC, and IEEE provide a foundation for industry-

specific standards like those published by SEMI

Standards. In acknowledgement of this tiered approach to

standardization there are provisions for recognizing

industry-specific or product-type standards by

organizations like IEC. Typically, product-type standards

when developed by industry-specific organizations take

precedent over the broader based generic industrial

standards.

SEMI F47-0200 © SEMI 1999, 2000 6

100

0.01 0.1 1 10 100

Duration of Voltage Sag in Seconds

Percent of Equipment Nominal Voltage

Area included in Specification

0.05 to 1 second

0.02

Figure R1-1

Recommended Semiconductor Equipment Voltage Sag Ride-Through Capability Curve

from 0 to 100 Seconds

NOTICE: SEMI makes no warranties or

representations as to the suitability of the standards set

forth herein for any particular application. The

determination of the suitability of the standard is solely

the responsibility of the user. Users are cautioned to

refer to manufacturer’s instructions, product labels,

product data sheets, and other relevant literature

respecting any materials mentioned herein. These

standards are subject to change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI F48-0600 © SEMI 20001

SEMI F48-0600

TEST METHOD FOR DETERMINING TRACE METALS IN POLYMER

MATERIALS

This test method was technically approved by the Global Facilities Committee and is the direct responsibility

of the North American Facilities Committee. Current edition approved by the North American Regional

Standards Committee on March 2, 2000. Initially available on www.semi.org April 2000; to be published

June 2000.

1 Purpose

1.1 This method provides a procedure for determining

the nonvolatile trace inorganic impurities in bulk

polymeric materials.

2 Scope

2.1 Following digestion by dry ashing (DDA) or

digestion in closed vessel (DCV) preparation

techniques, samples previously obtained and cleaned

according to SEMI F40 are analyzed for trace

inorganics using inductively coupled plasma-mass

spectrometry (ICP–MS), graphite furnace atomic

absorption spectroscopy (GFAAS), and/or inductively

coupled plasma-atomic emission spectroscopy (ICP–

AES).

2.2 Materials for analysis include, but are not limited

to:

• Raw polymer materials (resins), such as pellets of

perfluoroalkoxy (PFA), polyvinylidene fluoride

(PVDF), ethylenechlorotrifluoroethylene (ECTFE),

polyetheretherketone (PEEK), polypropylene (PP),

polyethylene (PE), acetal resin, polyvinyl chloride

(PVC), Perfluoromethylether-based Perfluoro-

alkoxy (MFA) and powders of polytetrafluoro-

ethylene (PTFE).

• Polymer components of tubing, piping, fittings,

valves, regulators, filter housings, filter cartridges,

O–rings and gaskets used in ultrapure water (UPW)

and liquid chemical distribution systems (LCDS).

See Section 3.8 for further information.

• Ion-exchange resins

• Polymer products used in the manufacturing of

semiconductor devices, such as wafer carriers and

wands, as well as accessories internal to wet

equipment (e.g., drums in spin rinse dryers, tanks

in quick dump rinsers). See Section 3.8 for further

information.

2.3 The DDA sections of this document refer to an

ashing technique, whereby the sample is placed into a

platinum or quartz crucible and thermally decomposed.

Thermal decomposition in muffle furnace or microwave

muffle furnace may also be used. Additionally, oxygen

plasma may be used separately or in conjunction with

these techniques.

2.4 The DCV sections of this document refer to closed

vessel microwave acid decomposition at elevated

temperature and pressure. Alternatively closed vessel

thermal conduction heating may also be applied.

2.5 ICP–MS, GFAAS, and ICP–AES are all

appropriate methods for inorganic analysis. ICP–MS is

the preferred method because it is more sensitive and

efficient. Alternate procedures may be used if they

meet the same analytical performance criteria. Each

laboratory is responsible for verifying the validity of

each method within its own operation.

2.6 This method is applicable for the elements found

in Table 1:

Table 1 List of Applicable Elements (See NOTE 1.)

Aluminum Magnesium

Barium Manganese

Calcium Nickel

Chromium Potassium

Cobalt Sodium

Copper Strontium

Iron Tin

Lead Titanium

Lithium Zinc

Molybdenum Zirconium

NOTE 1: See Limitations, Section 3.3.

2.7 This method may be used for other materials, or

other nonvolatile elements, if the end-user wishes and

performance is demonstrated for the analyte of interest,

in the matrices of interest, at the concentration levels of

interest.

2.8 This standard does not purport to address safety

issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

3 Limitations

3.1 The accuracy of the method is limited by the

detection limits of the instruments and by the sample

preparation procedure.