semi合集-English.pdf - 第4873页
SEMI M1-0305 © SEMI 1978, 2005 49 R2-9.2 X-ray Topography (DIN 50443/1) can also be us ed to test for defects in silicon wafers. T his method may see defects that do not intersect the surface, and can als o be used to ex…
SEMI M1-0305 © SEMI 1978, 2005 48
R2-7.14 Site Flatness is generally determined by SEMI MF1530 (see Note 1, above). The most commonly used
site flatness parameter is SFQR; other site flatness parameters are discussed in Appendix 1. Although it is not
widely used, the scanning site flatness parameter SFSR was recently introduced. For this parameter, use a subsite
width, Wss, equal to 8 mm and orient the wafer so the effective scan direction is along the wafer’s y-axis as defined
in SEMI M20.
R2-7.14.1 SEMI M49 is a guide for specifying test equipment for use in determining thickness, shape, and flatness
parameters on wafers intended to be used to fabricate advanced integrated circuits.
R2-7.15 Nanotopography should be determined by SEMI M43. This guide gives a variety of options that can be
used, so it is essential to specify the various conditions that are desired in any given case. The conditions chosen
should be agreed upon between supplier and customer.
R2-8 Front Surface Chemistry
R2-8.1 Surface Metal Contaminants
R2-8.1.1 Sodium, aluminum, potassium, and iron can be measured by secondary ion mass spectrometry (SIMS),
inductively coupled plasma mass spectrometry (ICP/MS), or atomic absorption spectroscopy (AAS). SIMS has
been standardized as SEMI MF1617. The latter two methods are frequently combined with vapor phase
decomposition (VPD), but they have not yet been standardized.
R2-8.1.2 Potassium, chromium, iron, nickel, copper, and zinc can be measured by Total Reflection X-Ray
Fluorescence Spectroscopy (TXRF), ICP/MS, and AAS. TXRF has been standardized both with (SEMI M33 and
ISO 17706) and without (ISO 14706) use of VPD to preconcentrate the surface metal contaminants.
R2-8.1.2.1 VPD is chemical preconcentration of the surface metals using vapor phase HF to decompose the surface
native oxide and a water (or acid-spiked water) droplet to scan across the wafer dissolving the surface metals. The
recovery rate of this preconcentration method is dependent upon the chemistry of the surface metals and upon the
chemistry used for the preconcentration. An alternative preconcentration method to VPD is to scan an acid droplet
across the wafer surface.
R2-8.1.2.2 VPD/AAS is a single-element technique which is widely used in Japan. It is element-specific and very
sensitive. VPD/ICP-MS is a rapid multi-element technique which is a more recent development. It is also very
sensitive, but its reproducibility is dependent upon the injection process into the ICP-MS. VPD/TXRF is an even
more recently developed multi-element technique. It is also very sensitive, but its reproducibility is dependent on
the residue-drying process.
R2-8.2 Surface Organics can be measured by SEMI MF1982. This standard describes two methods; the method to
be utilized should be agreed upon between supplier and customer.
R2-9 Surface Inspection Characteristics
R2-9.1 Visual Inspection of either the front or back surface of wafers can be carried out in accordance with SEMI
MF523 or JIS H 0614. The following conditions should be used for examination under high intensity illumination:
Background light intensity: 8 ± 2 fc (86 ± 22 lux),
Angle (alpha): 45 ± 10, and
Angle (beta): 90 ± 10.
See ¶6.8 for a discussion of which artifacts on the surface should be considered as defects. SEMI MF154 is a useful
guide for identifying structures and contaminants seen on silicon surfaces.
R2-9.1.1 Scratches—In inspecting for scratches, it is important to note that while macro-scratches can be seen under
both high intensity and diffuse illumination, micro-scratches can be seen only under high intensity illumination.
Therefore, to separate the two kinds of scratches, it is necessary to count the scratches observed under both kinds of
illumination. The count of scratches seen under diffuse illumination is the number of macro-scratches while the
difference of the counts seen under high intensity illumination and diffuse illumination is the number of micro-
scratches. Of course, if the total requirement is for no scratches of either kind, then examination under high
intensity illumination only is adequate.
SEMI M1-0305 © SEMI 1978, 2005 49
R2-9.2 X-ray Topography (DIN 50443/1) can also be used to test for defects in silicon wafers. This method may
see defects that do not intersect the surface, and can also be used to examine for bulk defects in the wafer (see
Section 2.4.10 of Table 1).
R2-9.3 Automated Surface Inspection by Light Scattering can also be used to detect many surface defects,
especially on polished surfaces. These techniques have not been fully standardized but there is a group of standards
that assist in making certain that the instruments are performing correctly. These include SEMI M52 for
determining if surface scanning inspection systems (SSIS) have suitable characteristics for the desired use, SEMI
M53 for calibrating SSISs, SEMI M58 for assuring that the calibration artifacts meet the desired requirements,
SEMI M50 for determining capture rate characteristics of SSISs and SEMI M35 for discriminating among various
surface features with an SSIS. Because of the lack of complete standardization, the testing conditions for use of
SSISs should be agreed upon between supplier and customer.
R2-9.3.1 Localized Light Scatterers — SSISs are particularly appropriate for inspecting polished surfaces for the
presence of particles and other localized light scatterers (LLS). In this case, it is essential to define the size ranges
(in units of latex sphere equivalents, LSE) as well as the maximum permissible counts, usually in terms of counts
per wafer, but occasionally in terms of counts per unit area.
R2-9.4 Surface Roughness affects the size of particle or other LLS that can be detected on a surface. SEMI M40
provides guidance on how to measure and report surface roughness on planar surfaces. Surface microroughness can
be determined with SSISs, through the use of the power spectral density as described in SEMI MF1811, or with an
atomic force microscope, which can be calibrated with the use of JEITA EM-3505. Other documents useful in
connection with surface microroughness measurements include ISO 4287/1 and ANSI/ASME B46.1. Because of
the lack of standardization, the testing conditions for surface microroughness measurements should be agreed upon
between supplier and customer.
R2-9.5 Back Surface Finish of 300 mm diameter wafers is specified as “polished.” The standard quantitative test
for the polish finish, which is not a smooth as the mirror polished front surface, is gloss. The general techniques for
determining gloss are given in ASTM Test Method D 523 and JIS Z 8741. However, for measuring gloss of silicon
surfaces, visible illumination at a 60 angle of incidence is referenced to a mirror polished silicon front surface.
Surface microroughness measurements (see ¶R2-9.4) can also be used as a quantitative test for back surface finish,
especially when it is necessary to observe particles or other LLSs smaller than 0.25 m LSE on the surface.
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature, respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights are entirely their own responsibility.
SEMI M1-0305 © SEMI 1978, 2005 50
REVISION RECORD
NOTICE: The Revision Record is an official part of the standard. It is optional and placed at the end of the
standard. Negative votes may not be based on the Revision Record.
Cycle Ballot Section Description Committee
Approval
0305 3907 Entire
Document
This revision combines most of SEMI M1 with parts of SEMI M18 to
form a new set of specifications that includes:
Purpose, a new scope, referenced standards, ordering information
(consolidated with some of SEMI M18), requirements (assembled
from several existing sections in SEMI M1), sampling, test methods,
certification, and packing and shipping container labeling sections;
Basic polished wafer specifications (developed by the Basic Wafer
Specification TF);
The two appendices and one related information section included in
previous editions of SEMI M1; and
A new related information section on detailed discussion of test
methods, based largely on material previously in SEMI M28.
A new table of contents has been added to make it easier to locate
specific information in the standard, and the terminology section of
SEMI M1 was combined with SEMI MF1241 and issued as SEMI
M59. The EDI codes from SEMI M18 remain in that standard.
The material in all of the substandards previously included at the end of
SEMI M1 is now included in the body of the document with no change
of the technical content. In addition, polished wafers and substrates
have been assigned category numbers based on the previous
substandard designation number. In some cases there are two
categories, based on differences in the edge rounding template used.
All of the specification requirements previously in the substandards
have been moved to tables as follows:
Substandard Nominal Diameter Located in Table Wafer Category(s)
SEMI M1.1 2 inch 4 1.1
SEMI M1.2 3 inch 4 1.2
SEMI M1.5 100 mm 5 1.5
SEMI M1.6 100 mm 5 1.6
SEMI M1.7 125 mm 5 1.7
SEMI M1.8 150 mm 6 1.8.1 and 1.8.2
SEMI M1.9 200 mm 9 1.9.1 and 1.9.2
SEMI M1.10 200 mm 8 1.10.1 and 1.10.2
SEMI M1.11 100 mm 7 1.11
SEMI M1.12 125 mm 7 1.12
SEMI M1.13 150 mm 8 1.13.1 and 1.13.2
SEMI M1.15 300 mm 9 1.15
Additional material related to 300 mm wafers is given elsewhere in
SEMI M1, most notably in ¶6.5.1.4, which describes the wafer marking
requirements. Also it should be noted that (1) the information on
surface orientation, for which the substandards allowed any of a
number of options, has been moved to Item 2-1.8 of Table 1, Silicon
Wafer Specification Format for Order Entry, Parts 1 and 2, and (2) the
information on orthogonal misorientation, which is the same for all
(111) silicon wafers has been moved to Item 2-1.9 of the same table.
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