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SEMI M49-0704 © SEMI 2001, 2004 2 SEMI M11 — Specifications for Silicon Epitax ial Wafers for Integrated Circuit (IC) Applicatio ns SEMI M12 — Specification fo r Serial Alphanumeric Marking of the Front Surface of Wafers…
SEMI M49-0704 © SEMI 2001, 2004
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SEMI M49-0704
GUIDE FOR SPECIFYING GEOMETRY MEASUREMENT EQUIPMENT
FOR SILICON WAFERS FOR THE 130 nm TO 65 nm TECHNOLOGY
GENERATIONS
This guide was technically approved by the Global Silicon Wafer Committee and is the direct responsibility
of the European Silicon Wafer Committee. Current edition approved by the European Regional Standards
Committee on May 14, 2004. Initially available at www.semi.org June 2004; to be published July 2004.
Originally published November 2001; previously published March 2003.
1 Purpose
1.1 This document provides a guide for specifying
measurement equipment for geometry and flatness of
silicon wafers of the 130, 90, and 65 nm technology
generation as anticipated by the International
Technology Roadmap for Semiconductors (ITRS) and
in the forecasts of the major manufacturers of
semiconductor devices. Wafer parameters as defined by
SEMI M1, SEMI M8, SEMI M11, SEMI M24, or
SEMI M38 are specified by customers of Si wafer
suppliers and are usually part of Certificates of
Compliance. Suppliers of Si wafers and their customers
might measure these parameters using equipment
provided by different manufacturers of such equipment
or using different generations of equipment of one
supplier. Agreement on basic features and capability of
such measurement equipment improves data exchange
and interpretation of data as well as procurement of
appropriate tools.
2 Scope
2.1 This guide outlines and recommends basic
specifications for equipment for measuring geometry
and flatness of Si wafers of 130, 90, and 65 nm
technology generation.
2.2 The guide applies to measurement equipment used
for verifying the quality parameters geometry and
flatness in large scale production of bare polished or
epitaxial Si wafers the backside of which may be acid
etched and/or covered by unpatterned, homogeneous
layers of e.g. poly-Si or LTO (low temperature oxide).
Artifacts (e.g., reference materials) for calibrating
measurement equipment might have different
properties.
2.3 The guide also applies to measurement equipment
that provides only a subset of the measurement features
outlined in this guide.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Limitations
3.1 The document does not apply to measurement
equipment used to control intermediate process steps
during Si wafer manufacturing. However, it may be
completely or partly used for measurement equipment
for those applications provided corresponding
constraints are appropriately identified.
3.2 The document also does not apply to measurement
equipment for SOI wafers or patterned wafers.
4 Referenced Standards
4.1 SEMI Standards
SEMI E5 — SEMI Equipment Communications
Standard 2 Message Content (SECS-II)
SEMI E10 — Specification for Definition and
Measurement of Equipment Reliability, Availability,
and Maintainability (RAM)
SEMI E14 — Measurement of Particle Contamination
Contributed to the Product from the Process or Support
Tool
SEMI E30 — Generic Model for Communications and
Control of Manufacturing Equipment (GEM)
SEMI E37 — High Speed SECS Message Services
(HSMS) Generic Services
SEMI E58 — Automated Reliability, Availability, and
Maintainability Standard (ARAMS): Concepts,
Behavior, and Services
SEMI E89 — Guide for Measurement System
Capability Analysis
SEMI M1 — Specification for Polished
Monocrystalline Silicon Wafers
SEMI M1.15 — Standard for 300 mm Polished
Monocrystalline Silicon Wafers (Notched)
SEMI M8 — Specification for Polished
Monocrystalline Test Wafers
SEMI M49-0704 © SEMI 2001, 2004 2
SEMI M11 — Specifications for Silicon Epitaxial
Wafers for Integrated Circuit (IC) Applications
SEMI M12 — Specification for Serial Alphanumeric
Marking of the Front Surface of Wafers
SEMI M13 — Specification for Alphanumeric Marking
of Silicon Wafers
SEMI M24 — Specification for Polished
Monocrystalline Silicon Premium Wafers
SEMI M27 — Practice for Determining the Precision
Over Tolerance (P/T) Ratio of Test Equipment
SEMI M38 — Specification for Polished Reclaimed
Silicon Wafers
SEMI M43 — Guide for Reporting Wafer
Nanotopography
SEMI MF42 — Standard Test Methods for
Conductivity Type of Extrinsic Semiconducting
Materials
SEMI MF84 — Standard Test Method for Measuring
Resistivity of Silicon Wafers with an In-Line Four-
Point Probe
SEMI MF534 — Standard Test Method for Bow of
Silicon Wafers
SEMI MF657 — Standard Test Method for Measuring
Warp and Total Thickness Variation on Silicon Wafers
by Non-contact Scanning
SEMI MF671 — Standard Test Method for Measuring
Flat Length on Wafers of Silicon and Other Electronic
Materials
SEMI MF673 — Standard Test Methods for Measuring
Resistivity of Semiconductor Slices or Sheet Resistance
of Semiconductor Films with a Non-contact Eddy-
Current Gage
SEMI MF928 — Standard Test Methods for Edge
Contour of Circular Semiconductor Wafers and Rigid
Disk Substrates
SEMI MF1152 — Standard Test Method for
Dimensions of Notches on Silicon Wafers
SEMI MF1390 — Standard Test Method for Measuring
Warp on Silicon Wafers by Automated Non-contact
Scanning
SEMI MF1451 — Standard Test Method for Measuring
Sori on Silicon Wafers by Automated Non-contact
Scanning
SEMI MF1530 — Standard Test Method for Measuring
Flatness, Thickness, and Thickness Variation on Silicon
Wafers by Automated Non-contact Scanning
SEMI MF2074 — Standard Guide for Measuring
Diameter of Silicon and Other Semiconductor Wafers
SEMI T7 — Specification for Back Surface Marking of
Double-Side Polished Wafers with a Two-Dimensional
Matrix Code Symbol
4.2 ISO Standards
1
ISO/IEC 8859 — Information technology – 8-bit
single-byte coded graphic character sets
ISO 8879 — Information Processing – Text and office
systems – Standard Generalized Markup Language
(SGML)
ISO 9000 — Quality management systems –
Fundamentals and vocabulary
ISO 9001 — Quality management systems –
Requirements
ISO/IEC 10646-1 — Information technology –
Universal multiple-octet character set (UCS) – Part 1:
Architecture and basic multilingual plane
ISO/IEC 10918 — Information technology – Digital
compression and coding of continuous-tone still images
ISO 14644-1 — Cleanroom and associated controlled
environments – Part 1: Classification of air cleanliness
4.3 JEITA Standards
2
JEIDA 43 — Terminology of silicon wafer flatness
4.4 DIN Standards
3
50431 — Measurement of the electrical resistivity of
silicon or germanium single crystals by means of the
four-point-probe direct current method with collinear
probe array
50432 — Determination of the conductivity type of
silicon or germanium by means of rectification test or
hot-probe
50441-1 — Determination of the geometric dimensions
of semiconductor slices; measurement of thickness
50441-2 — Determination of the geometric dimensions
of semiconductor slices; testing of edge rounding
1 International Organization for Standardization, ISO Central
Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20,
Switzerland. Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30
Website: www.iso.ch
2 Japanese Electronic and Information Technology Industries
Association, Tokyo Chamber of Commerce and Industry Bldg. 2-2,
Marunouchi 3-chome, Chiyoda-ku, Tokyo 100-0005, Japan. Website:
www.jeita.or.jp
3 Available from Deutches Institut für Normung e.V., Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-10787 Berlin, Germany. Website:
www.din.de
SEMI M49-0704 © SEMI 2001, 2004
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50441-4 — Determination of the geometric dimensions
of semiconductor slices; diameter and flat depth of
slices
50441-5 — Determination of the geometric dimensions
of semiconductor wafers; terms of shape and flatness
deviation
50445 — Contactless determination of the electrical
resistivity of semiconductor wafers with the eddy
current method
NOTE 1: Unless otherwise indicated, all documents cited
shall be the latest published versions.
4.5 IEEE Standards
4
IEEE 754 — IEEE Standard for Binary Floating-Point
Arithmetic
IEEE 802 — IEEE Standard for Local and Metropolitan
Networks: Overview and Architecture
IEEE 854 — IEEE Standard Radix-Independent
Floating-Point Arithmetic
4.6 Other Standards
FED-STD 209E —Airborne Particulate Cleanliness
Classes in Clean Rooms and Clean Zones
5
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
5 Terminology
5.1 Abbreviations and Acronyms
5.1.1 ARAMS — Automated Reliability, Availability,
and Maintainability Standard
5.1.2 ASCII — American Standard Code for
Information Interchange
5.1.3 FTP — File Transfer Protocol
5.1.4 GEM — Generic Equipment Model
5.1.5 HSMS — High Speed SECS Messaging Service
5.1.6 IEEE — The Institute of Electrical and
Electronics Engineers, Inc.
5.1.7 JPEG — Joint Photographics Expert Group
5.1.8 SECS — SEMI Equipment Communications
Standard
5.1.9 XML — Extensible Markup Language
5.2 Definitions
4 Institute of Electrical and Electronics Engineers, IEEE Operations
Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey
08855-1331, USA. Telephone: 732.981.0060; Fax: 732.981.1721
6 General Services Administration, Federal Supply Service, FSS
Acquisition Management Center, Environmental Programs and
Engineering Policy Division (FCOE), Washington, D.C. 20406
5.2.1 bias — the difference between the average of
measurements made on the same object and its true
value. Sufficient measurements are needed to mitigate
the effects of variability. (SEMI E89)
5.2.2 calibration — calibration is a measurement
process that assigns value to the property of an artifact
or to the response of an instrument relative to reference
standards or to a designated measurement process.
NOTE 2: The purpose of calibration is to eliminate or reduce
bias in the user’s measurement system relative to the
reference base. The calibration process compares an unknown
or test item or instrument with reference standards according
to a specific algorithm, often in the form of a specific
calibration curve. (SEMI E89)
5.2.3 compatibility — the capability of measurement
equipment to emulate the measurement process of other
tools. Downward compatibility refers to former
generation(s) of the same or similar type of equipment
of an equipment supplier.
NOTE 3: Compatibility can be provided by a measurement
mode in which filtering, spatial resolution, etc. of another,
older, tool is imitated.
5.2.4 correlation — the relation of measurement
results obtained by repeated measurements with the
same set of test specimen(s) and any two measurement
tools expressed in terms of a regression curve.
5.2.5 level 1 variability (σ
1
) — the variation (standard
deviation) of measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool under nominally identical
conditions without replacing the test specimen between
subsequent measurement runs. σ
tests are performed
with a single calibration in the shortest possible time
interval.
5.2.6 level 2 variability (σ
2
) — the variation (standard
deviation) of measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool with replacing the test
specimen between subsequent measurement runs but
otherwise under nominally identical conditions. σ
2
tests
are performed with a single calibration in the shortest
possible time interval.
5.2.7 level 3 variability (σ
3
) — the variation (standard
deviation) of measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool with replacing the test
specimen between subsequent measurement runs but
otherwise under nominally identical conditions. σ
3
tests
are performed over a time period greater than σ
2
tests
without operator induced adjustment.
5.2.8 matching tolerance (∆
m
) — the difference in bias
for any two measurement tools of the same kind.