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SEMI M52-0703 © SEMI 2002, 2003 13 Item Recommended Specif ication Comments References 3.3 Calibration automated, In order to reduce PSL sphere sizing uncertainty in the 65 nm to 200 nm range, the diameter distribution s…
SEMI M52-0703 © SEMI 2002, 2003 12
Item Recommended Specification Comments References
1.6.3 Wafer edge/ Bevel
User specific/selectable
2. SETUP PARAMETERS
2.1 FQA/edge exclusion
EE ≥1 mm, 200 and 300 mm wafers
FQA 200 mm wfrs: ≤198 mm
FQA 300 mm wfrs: ≤298 mm
p
erformance parameters
to be verified with EE
≥2 mm
2.2 Number of classification bins
arbitrary, definable,
cumulative, differential
2.2.1 LLS
10/channel
2.2.2 Bright Field Defects
10/channel
2.2.3 Haze
10/channel
2.2.4 Scratches
4/channel
2.2.5 Area Defects
4/channel
2.3 Sorting criteria
all parameters, all bins, separately and
combined
2.4 Exclusion windows
a) >5, curved/linear boundaries,
arbitrary position on entire wafer
surface
b)perimeter exclusion windows:
N zones with total area covered
≤0.001 of total wafer area in the radial
range R-2 mm to R,
total perimeter excluded at R-1 mm
≤4% of total wafer circumference, no
single zone longer than 5 mm.
a) e.g. laser mark
exclusion
b) e.g. edge gripping
exclusion
3. PERFORMANCE
3.1 Throughput
CoO issue
3.1.1 200 mm wafers
>140 wph for LLS ≥65 nm LSE
and ≥95% capture rate
3.1.2 300 mm wafers
>100 wph for LLS ≥65 nm LSE
and ≥95% capture rate
3.2 Downward compatibility
one generation Subject to limitations
imposed by changes in
geometry and number
of detectors.
SEMI M52-0703 © SEMI 2002, 2003 13
Item Recommended Specification Comments References
3.3 Calibration
automated,
In order to reduce PSL
sphere sizing
uncertainty in the
65 nm to 200 nm range,
the diameter
distribution should have
a full width at half
maximum (FWHM)
≤5%. In addition, it is
desirable that the peak
PSL diameter as
deposited on the wafer
have a relative
expanded uncertainty at
about 95% confidence
level as small as
possible but not greater
than 3%. See NOTE 2.
SEMI M53
NOTE 1: At the calibration points, if it is assumed that the SSIS sizing of PSL spheres is exactly correct, then the sizing error is caused by
differences between the response predicted by the calibration curve and the exact response of the SSIS away from calibration points. Details for
calculating this error are being developed for another standard.
NOTE 2: This specification limits the width of the diameter distribution of PSL spheres as they appear on the wafer in the calibration deposition.
The deposition system transfer function (often nominally triangular in shape) times the actual PSL diameter distribution shape presented to the
system defines the deposition width. Thus the width of the deposition on the wafer is no larger than the width of the transfer function. A narrow
width decreases calibration uncertainty in three ways. First, in the presence of background noise, it makes the distribution peak signal easier to
locate. Second, a narrow transfer function makes the deposition distribution peak easier to determine. Third, a narrow transfer function reduces
the deposition distribution asymmetry if the input PSL distribution is not symmetrical about the peak value.
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for
any particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer’s instructions, product labels, product data sheets, and other relevant
literature respecting any materials mentioned herein. These standards are subject to change without notice.
The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted
material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M53-1103 © SEMI 2003 1
SEMI M53-1103
PRACTICE FOR CALIBRATING SCANNING SURFACE INSPECTION
SYSTEMS USING DEPOSITIONS OF MONODISPERSE POLYSTYRENE
LATEX SPHERE ON UNPATTERNED SEMICONDUCTOR WAFER
SURFACES
This practice was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the North American Silicon Wafer Committee. Current edition approved by the North
American Regional Standards Committee on July 25, 2003. Initially available at www.semi.org October
2003; to be published November 2003. Originally published March 2003.
1 Purpose
1.1 Calibration of a scanning surface inspection system
(SSIS) using a deposition of polystyrene latex (PSL)
spheres as a known source of scatter signal is a
necessary step in matching the responses of SSISs.
However, the measured amplitude of the light scatter
signal depends on both the characteristics of the SSIS
and the characteristics of the scatter source. The use of
a deposition of polystyrene latex (PSL) spheres (see
Section 5.3.4) as a known source of scatter signal
allows meaningful comparisons to be made between
scatter signals from PSL spheres as measured by dark
field detection systems of different designs. On the
other hand, calibration with PSL spheres alone does not
guarantee meaningful performance comparisons to be
made between dark field detection SSISs of the same or
different designs when detecting either real particles of
materials different from PSL spheres or other surface
defects.
1.2 This practice describes calibration of SSIS dark
field channels so that the SSIS accurately sizes PSL
spheres deposited on unpatterned polished, epitaxial, or
filmed semiconductor wafer surfaces (see Related
Information 1).
1.3 This practice defines the use of latex sphere
equivalent (LSE) signals as a means of reporting real
surface defects whose identity and true size are
unknown.
1.4 This practice provides a basis for quantifying SSIS
performance as used in related standards concerned
with parameters such as sensitivity, repeatability and
capture rate.
2 Scope
2.1 This practice covers
• Requirements for the surface and other
characteristics of the semiconductor substrates on
which the PSL spheres are deposited to form
reference wafers (see Section 8.1),
• Selection of appropriate certified depositions of
PSL spheres for SSIS calibration (see Section 8.2),
• Size distribution requirements to be met by the
PSL sphere depositions (but not the deposition
method), and
• Multipoint calibration procedures for dark field
channels.
2.2 Appendix 1 covers a single-point calibration
procedure that may be used in limited production
applications.
2.3 PSL spheres from 10 µm to the smallest size that
can be detected by the SSIS being calibrated can be
used in this practice.
NOTE 1: At the time of development of this edition of the
practice, the smallest practical deposited PSL spheres have
diameters approaching 30 nm, but as IC technology evolves to
smaller and smaller critical dimensions it is expected that
depositions of smaller diameter PSL spheres will become
available.
2.4 Background information to enable an
understanding of the need for the various requirements
imposed on the PSL sphere depositions is provided in
Related Information 1.
2.5 Both the deposition process and calibration
procedures must be carried out in a Class 4 or better
environment as defined in ISO 14644-1.
NOTE 2: ISO class 4 is approximately the same as Class
M2.5 (Class 10) as defined in Federal Standard 209E.
2.6 Although it was developed primarily for use in
evaluation of SSISs to be used for detection of localized
light scatterers (LLSs) on polished silicon wafers with
geometrical characteristics as specified in SEMI M1,
this practice can be applied to SSISs to be used for
detection of LLSs on other unpatterned semiconductor
surfaces provided that suitable reference wafers are
employed.
2.7 This practice does not in any way attempt to define
the manner in which LSE values are used to define the