semi合集-English.pdf - 第5250页

SEMI M41-1101 © SE MI2000, 2001 7 Parameters (Units) Va lue ASTM Test Method or Meas ureme nt Procedure Accepta nce Oxyge n Concentration (/ cm 3 ) Note C F1188- 93a, F1619- 95 Note C, or Ce rtified by Wafer Manufactures…

SEMI M41-1101 © SEMI 2000, 2001 6

Parameters (Units) Value ASTM Test Method or

Measurement Procedure

Acceptance

Oxide Defect Density (/cm

) Note C I-V on Capacitor,

Cu Decoration

(SEMI M34)

Note C

Dielectric Breakdown Voltage

(V)

Note C I-V on Capacitor Note C

Interface States (/cm

) Note C, H C-V Technique Note C

Fixed Charge Density (/cm

) Note C, H C-V Technique

(F1153-92)

Note C

Bonding Strength (kg/cm

) Note C Tensile Strength Note C, or Certified by

Wafer Manufactures

Base Silicon Wafer

Crystalline Orientation Note C F26-87a Note C

Resistivity (ohm-cm) Note C F43-93, F84-93,

F1527-94

Note C

Conductivity Type Note C F42-93 Note C

Fiducial Axis Orientation

(Flat/Notch)

Note C F671-90, F1152-93 Note C

To-be-bonded Surface

Cleanliness: Metals (/cm

)

Note C AAS, ICP-MS,

TXRF (F1526-95),

SIMS (F1617-98)

Note C

Back Surface Finish Note C Optical Metrology Note C

Table 3 Silicon-on-Insulator (SOI) Specifications for Low Voltage (45–60V) Power Device with N+ Buried layer

Parameters (Units) Value ASTM Test Method or

Measurement Procedure

Acceptance

Wafer(Overall)

Diameter (mm) 125, 150, 200 F613-93 Note A

Thickness (µm) (Value of regular silicon

wafer) + (SOI thickness) +

(Box thickness)

F533-96, F1530-94 Note A

Total Thickness Variation (µm) Note C F1530-94 Note C

LTV (µm) Note C F1530-94 Note C

Warp (µm)

≤ 100 (Note B, C, F)

F1390-92 Note C, or Certified by

Wafer Manufactures

Non-SOI Edge Area (mm)

≤ 3 (Note C)

Optical Metrology Note C, or Certified by

Wafer Manufactures

Edge Profile/Edge Profile

Surface Finish

Note C F928-93 Note C, or Certified by

Wafer Manufactures

Top Silicon Film

Thickness (µm) 8–16 Note D

(F399-88)

Note C, E,

Must be measured on each

wafer

Surface Orientation Note C X-ray Diffraction

(F26-87a)

Note C, or Certified by

Wafer Manufactures

Resistivity (ohm-cm) Note C F43-93, F84-93,

F1527-94

Note C, or Certified by

Wafer Manufactures

Conductivity Type Note C F42-93 Note C, or Certified by

Wafer Manufactures

SEMI M41-1101 © SEMI2000, 20017

Parameters (Units) Value ASTM Test Method or

Measurement Procedure

Acceptance

Oxygen Concentration (/cm

) Note C F1188-93a,

F1619-95

Note C, or Certified by

Wafer Manufactures

Carbon Concentration (/cm

) Note C F1391-93 Note C, or Certified by

Wafer Manufactures

Surface Cleanliness: Metal

Contamination (/cm

)

Note A, C AAS, ICP-MS,

TXRF (F1526-95),

SIMS (F1617-98)

Note A, C

Surface Cleanliness: Particle

Density (/wafer)

Note A, C Light Scattering

Tomography (F1620-96)

(SEMI M34)

Note A, C

Surface Roughness (nm) Note A, C AFM (SEMI M34) Note A, C

Carrier Lifetime (µsec) Note C µ-PCD Method (F1535-94) Note C

Crystalline Alignment of Top

Silicon Film to Base

Wafer (°)

Note C X-ray Diffraction

(F847-94)

Note C

Surface Feature

(Haze, Scratch, etc)

None F154-94, F523-93, F1726-97 Must be measured on each

wafer

OSF Density (/cm

) Note C Optical Metrology

(F1727-97)

Note C, or Certified by

Wafer Manufactures

Buried Layer Note C F110-88 Note C

Buried Oxide (BOX)

Thickness (µm) 0.5–2 Ellipsometry (F576-95)

Reflective Spectroscopy

(SEMI M34)

Tolerance is ± 5%;

Note C, or Certified by

Wafer Manufactures

Location of Bonded Interface Note C TEM Certified by Wafer

Manufactures

Void Density (/cm

) None Scanning Acoustic

Tomography, Optical Defect

Inspection

Note C

Oxide Defect Density (/cm

) Note C I-V on Capacitor,

Cu Decoration

(SEMI M34)

Note C

Dielectric Breakdown Voltage

(V)

Note C I-V on Capacitor Note C

Interface States (/cm

) Note C, H C-V Technique Note C

Fixed Charge Density (/cm

) Note C, H C-V Technique

(F1153-92)

Note C

Bonding Strength (kg/cm

) Note C Tensile Strength Note C, or Certified by

Wafer Manufactures

Base Silicon Wafer

Surface Orientation Note C F26-87a Note C

Resistivity (ohm-cm) Note C F43-93, F84-93, F1527-94 Note C

Conductivity Type Note C F42-93 Note C

Fiducial Axis Orientation

(Flat/Notch)

Note C F671-90, F1152-93 Note C

To-be-bonded Surface

Cleanliness: Metals (/cm

)

Note C AAS, ICP-MS,

TXRF (F1526-95),

SIMS (F1617-98)

Note C

Back Surface Finish Note C Optical Metrology Note C

SEMI M41-1101 © SEMI 2000, 2001 8

Table 4 Silicon-on-Insulator (SOI) Specifications for Medium Voltage (150–250V) Power Device

Parameters (Units) Value ASTM Test Method or

Measurement Procedure

Acceptance

Wafer(Overall)

Diameter (mm) 125, 150, 200 F613-93 Note A

Thickness (µm) (Value of regular silicon

wafer) + (SOI thickness) +

(Box thickness)

F533-96, F1530-94 Note A

Total Thickness Variation (µm) Note C F1530-94 Note C

LTV (µm) Note C F1530-94 Note C

Warp (µm)

≤ 100 (Note B, C, G)

F1390-92 Note C, or Certified by

Wafer Manufactures

Non-SOI Edge Area (mm)

≤ 3 (Note C)

Optical Metrology Note C, or Certified by

Wafer Manufactures

Edge Profile/Edge Profile

Surface Finish

Note C F928-93 Note C, or Certified by

Wafer Manufactures

Top Silicon Film

Thickness (µm) 2–10 Note D

(F399-88)

Note C, E,

Must be measured on each

wafer

Surface Orientation Note C X-ray Diffraction

(F26-87a)

Note C, or Certified by

Wafer Manufactures

Resistivity (ohm-cm) Note C F43-93, F84-93,

F1527-94

Note C, or Certified by

Wafer Manufactures

Conductivity Type Note C F42-93 Note C, or Certified by

Wafer Manufactures

Oxygen Concentration (/cm

) Note C F1188-93a,

F1619-95

Note C, or Certified by

Wafer Manufactures

Carbon Concentration (/cm

) Note C F1391-93 Note C, or Certified by

Wafer Manufactures

Surface Cleanliness: Metal

Contamination (/cm

)

Note A, C AAS, ICP-MS,

TXRF (F1526-95),

SIMS (F1617-98)

Note A, C

Surface Cleanliness: Particle

Density (/wafer)

Note A, C Light Scattering

Tomography (F1620-96)

(SEMI M34)

Note A, C

Surface Roughness (nm) Note A, C AFM

(SEMI M34)

Note A, C

Carrier Lifetime (µsec) Note C µ-PCD Method

(F1535-94)

Note C

Crystalline Alignment of Top

Silicon Film to Base Wafer(°)

Note C X-ray Diffraction

(F847-94)

Note C

Surface Feature

(Haze, Scratch, etc)

None F154-94, F523-93, F1726-97 Must be measured on each

wafer

OSF Density (/cm

) Note C Optical Metrology

(F1727-97)

Note C, or Certified by

Wafer Manufactures

Buried Oxide (BOX)

Thickness (µm) 0.5–3 Ellipsometry (F576-95)

Reflective Spectroscopy

(SEMI M34)

Tolerance is ± 5%;

Note C, or Certified by

Wafer Manufactures