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SEMI E129-1103 © SEMI 2003 3 ESD ADV1.0 — Glossary of Terms ESD ADV53.1 — ESD Protective Work stations ESD S6.1 — Grounding – Recommended Practice ESD SP10.1 — Automated Handling Equ ipment ESD STM11.11 — Surface Re sist…

SEMI E129-1103 © SEMI 2003 2

3 Limitations

3.1 Static Measurements — Measurements of

electrostatic quantities such as charge, electric field,

voltage, and resistance to ground are difficult to make.

The nature of the object (insulator or conductor), its

geometry, its surroundings, and the measuring

equipment itself, are only a few of the factors affecting

the accuracy of an electrostatic measurement. In

general, direct measurement of static charge is possible

with small, moveable objects. Larger objects, and those

fixed in position, will need to be characterized by the

electric field that results from the static charge.

3.2 Location — The test methods for static charge and

maximum recommended levels of static charge on

facility surfaces are meant to be applied after the

facility has been built. Testing the performance of

static control methods may be done before or after

construction. It may be difficult to directly relate the

performance of the static control method to the static

charge level that results in the completed facility. Prior

experience of the static control supplier will be a source

of this information.

3.3 Test Methods — The test methods referenced in

this document do not guarantee precise measurements

of static charge levels. The maximum static charge

levels recommended in this document have large

tolerances. See Section 15.1.

3.4 Static Charge Control — There are a variety of

static related issues in a semiconductor-manufacturing

environment. The issues are complex due to the wide

range of electrostatic problems, and device or

equipment sensitivities to these problems. This guide

contains general recommendations. Users of this

document are cautioned that specific static related

problems may require or allow different levels of static

charge than are recommended in this document.

3.5 Measurements

3.5.1 Measurements of Very High Static Potentials

(> 30,000 V) — Measurements of very high static

potentials (> 30,000 V) may need to be done at larger

distances to avoid exceeding the measurement range of

the meter and/or an ESD event to the meter.

3.5.2 Measurements on Moving Objects or Surfaces —

Care should be taken, when attempting to read

electrostatic charges on moving objects or surfaces, to

maintain correct distance and avoid any contact; this is

to ensure "good" readings with no mechanical damage

or personal injury.

4 Referenced Standards

4.1 SEMI Standards

SEMI E10 — Specification for Definition and

Measurement of Equipment Reliability, Availability,

and Maintainability (RAM)

SEMI E33 — Specification for Semiconductor

Manufacturing Facility Electromagnetic Compatibility

SEMI E35 — Cost of Ownership for Semiconductor

Manufacturing Equipment Metrics

SEMI E43

— Guide for Measuring Static Charge on

Objects and Surfaces

SEMI E78 — Electrostatic Compatibility

– Guide to

Assess and Control Electrostatic Discharge (ESD) and

Electrostatic Attraction (ESA) for Equipment

4.2 ESD Association Standards and Advisories

ANSI EOS/ESD S8.1 — ESD Awareness Symbols

ANSI ESD S1.1 — Evaluation, Acceptance, and

Functional Testing of Wrist Straps

ANSI ESD S11.31 — Evaluating the Performance of

Electrostatic Discharge Shielding: Bags

ANSI ESD S20.20 — Standard for the Development of

an ESD Control Program

ANSI ESD S4.1 — Worksurfaces – Resistance

Measurements

ANSI ESD STM11.12 — Volume Resistance

Measurement of Static Dissipative Planar Materials

ANSI ESD STM12.1 — Seating

– Resistive

Characterization

ANSI ESD STM2.1 — Resistance Test Method for

Electrostatic Discharge Protective Garments

ANSI ESD STM3.1 — Ionization

ANSI ESD STM4.2 — Worksurfaces − Charge

Dissipation Characteristics

ANSI ESD STM5.2 — Electrostatic Discharge

Sensitivity Testing

– Machine Model

ANSI ESD STM5.3.1 — Charged Device Model

(CDM) – Component Level

ANSI ESD STM9.1 — Resistive Characterization of

Footwear

ANSI ESD STM97.1 — Floor Materials and Footwear

– Resistance Measurement in Combination with a

Person

1 ESD Association, 7900 Turin Road, Rome, NY 13440, USA

(

www.esda.org)

SEMI E129-1103 © SEMI 2003 3

ESD ADV1.0 — Glossary of Terms

ESD ADV53.1 — ESD Protective Workstations

ESD S6.1 — Grounding – Recommended Practice

ESD SP10.1 — Automated Handling Equipment

ESD STM11.11 — Surface Resistance Measurement of

Static Dissipative Planar Materials

ESD STM5.1 — Electrostatic Discharge Sensitivity

Testing – Human Body Model

ESD STM7.1 — Floor Materials – Resistive

Characterization of Materials

ESD STM97.2 — Floor Materials and Footwear

Voltage Measurement in Combination with a Person

ESD TR11-01 — Electrostatic Guidelines and

Considerations for Cleanrooms and Clean

Manufacturing

ESD TR20.20 — ESD Handbook

4.3 IEC Documents

IEC 61000-4-2 — Electromagnetic compatibility

(EMC) Part 4.2: Testing and measurement techniques

– Electrostatic discharge immunity test, Transient

Immunity Standard, International Electrotechnical

Commission (IEC).

IEC EN 61340-5-1 — Electrostatics – Part 5.1:

Protection of electronic devices from electrostatic

phenomena — General Requirements.

NOTE 2: This replaces CENNELEC 100015-1 — Elements

of a Static Control Program

IEC EN 61340-5-2 — Electrostatics – Part 5.2:

Protection of electronic devices from electrostatic

phenomena – Users’ Guide – Elements of a Static

Control Program

4.4 JEDEC Documents

JESD22-A114 — Electrostatic Discharge (ESD)

Sensitivity Testing Human Body Model (HBM)

JESD22-C101 — Field-Induced Charged-Device

Model Test Methods for Electrostatic Discharge

Withstand Thresholds of Microelectronic Components

JESD625 — Requirements for Handling Electrostatic-

Discharge-Sensitive (ESDS) Devices

2 IEC, 3, Rue de Varembe, CH - 1211 Geneva 20

Switzerland (

www.IEC.org.ch)

3 JEDEC, 2500 Wilson Blvd., Arlington, VA 22201-3834, USA

(

www.jedec.org)

4.5 Other Documents

89/336/EEC — Directive on Electromagnetic

Compatibility – European Commission

BS EN 50082-2 — Electromagnetic Compatibility

(EMC). Generic Immunity Standards. Immunity for

Industrial Environments, British Standards Institution

(BSI)

ITRS 2003 — International Technology Roadmap for

Semiconductors – International SEMATECH

MIL-STD 883 — Test Method Standard –

Microcircuits (Method 3015.7 – Electrostatic Discharge

Sensitivity Classification), Defense Supply Center

Columbus

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

5 Terminology

5.1 Definitions

5.1.1 carrier — a device for holding wafers, dies,

packaged integrated circuits, or reticles for various

processing steps in semiconductor manufacturing (from

SEMI E78).

5.1.2 electromagnetic interference (EMI) — any

electrical signal in the non-ionizing (sub-optical)

portion of the electromagnetic spectrum with the

potential to cause an undesired response in electronic

equipment.

5.1.3 electrostatic attraction (ESA) — the force

between two or more oppositely charged objects.

NOTE 3: The result is increased deposition rate of particles

onto charged surfaces, or movement of charged materials.

5.1.4 electrostatic compatibility — charge control

adequate to allow the manufacturing of products and

the inter-equipment transfer of products, reticles, and

carriers without electrostatic problems.

5.1.5 electrostatic discharge (ESD) — the rapid

spontaneous transfer of electrostatic charge induced by

a high electrostatic field.

NOTE 4: Usually the charge flows in a spark between two

objects at different electrostatic potentials.

4 European Commission, Rue de la Loi, Wetstraat 200, B-1049

Brussels, Belgium (

www.europa.eu.int)

5 BSI, 389 Chiswick High Road, GB - LONDON W4 4AL

(

www.BSI-global.com)

6 International SEMATECH, 2706 Montopolis Drive, Austin, TX

78741, USA (

www.sematech.org)

7 Defense Supply Center Columbus, P.O. Box 3990, Columbus, OH

43216-5000, USA (

www.dscc.dla.mil)

SEMI E129-1103 © SEMI 2003 4

5.1.6 ESD simulator — an instrument providing a

specified electrostatic discharge current waveform

when discharged directly to a product or equipment

part.

5.1.7 facility electrostatic levels — acceptable static

charge levels related to the major technology nodes of

product and reticle feature sizes.

5.1.8 minienvironment — a localized environment

created by an enclosure to isolate the product from

contamination and people.

5.1.9 product — any unit intended to become a

functional semiconductor device.

6 Requirements

6.1 Measurement Methods and Instrumentation — No

single method of testing for static charge can determine

a “safe” level. The amount of static charge, the

distribution of static charge on an object, and the nature

of the static discharge will all interact to determine if

the charge level is safe. It will be difficult to determine

levels that guarantee static related problems are totally

eliminated. The goals of this guide are to assist the user

in identifying static charge levels likely to cause

problems in the semiconductor manufacturing facility,

and to direct the user to static control methods

appropriate to mitigate these problems. This guide is

intended to provide the user with enough insight to

define test methodologies for measuring static charge

and for evaluating the methods to control it.

6.2 ESD Damage — Direct Discharge

6.2.1 When considering direct ESD damage to an

object (e.g., product, reticle, or equipment), the

important parameter is the current accompanying the

charge transfer to or from the object. The charge may

be transferred from facility and furniture surfaces,

personnel, equipment parts, carriers, packaging

materials, or anything else that contacts the object.

6.2.2 Established test methods exist for determining the

threshold of damage to a particular object. When testing

packaged devices, ESD simulators of various types are

used

. Refer to ESD Association standards ESD

STM5.1, ANSI ESD STM5.2, and ANSI ESD

STM5.3.1, JEDEC JESD22-A114 and JESD22-C101,

or MIL-STD 883 for further information concerning

device testing. There are no established standards for

ESD simulator testing of wafers, reticles, or

unpackaged semiconductor devices. ESD damage

thresholds for these items may be significantly different

than for packaged devices.

6.2.3 Once the damaging current level for a product is

determined using an appropriate ESD simulator, the

corresponding amount of charge is known from the

ESD simulator operating parameters.

6.2.4 In the manufacturing facility, it is important to

know the charge on any objects that might directly

contact the product. Charge measurement methods

using a coulombmeter and Faraday Cup are described

in SEMI E78 and SEMI E43 for isolated conductors

(including personnel), or small and moveable objects.

The measurement methods of SEMI E43 can be used to

establish that the charge levels on these objects will

pose a hazard to products or reticles from a direct ESD

event.

6.2.5 Electric field measurements on large and fixed

objects, or insulators are less useful in estimating

whether or not a damaging direct ESD event will occur.

On objects that cannot be conveniently measured with a

coulombmeter, Electrostatic Fieldmeter measurements

can be useful in estimating the ESD threat, even though

the measurement may be less quantitative than the

coulombmeter measurement.

6.3 ESD Damage — Induced Charge

6.3.1 Charge may be induced on an object that results

in ESD damage. Part of a product (e.g., epoxy

package) or reticle (e.g., quartz substrate) may become

charged and induce charge separation to occur on

another part of the product (e.g., lead pins) or reticle

(e.g., chrome traces). ESD will occur if the lead pins or

chrome traces contact ground. Using a coulombmeter

or Faraday Cup and the methods of SEMI E43, the end

user should test product or reticles to determine the

level of static charge at which ESD damage occurs.

6.3.2 Alternatively, either the product or reticles may

be handled in proximity to another charged object. The

field from this charged object induces charge on

product or reticles, and ESD can result if the product or

reticle contacts ground while in the presence of the

field. Using an electrostatic fieldmeter and the methods

of SEMI E43, the end user should test products and

reticles to determine the acceptable levels of electric

field from static charge.

6.3.3 It has been shown that a changing electric field

causes ESD damage to reticles without ground contact

occurring. A changing electric field can result at the

reticle when an object in proximity to the reticle

acquires a charge, the reticle or a charged object are in

motion with respect to each other, or grounding

conditions change the field between a charged object

and the reticle (for example, due to robot handling).

See references in Related Information 2. In areas of the

manufacturing facility that produce or handle reticles,

electric field from any charged object will need to be

limited to levels that do not cause reticle ESD damage.

Test methods for electric field are contained in SEMI