semi合集-English.pdf - 第5310页

SEMI M49-0704 © SEMI 2001, 2004 9 Item Recommended Specification Comments References 1.3 Wafer Char acteristics – electrical, optical 1.3.1 Electrical Resistivity of Wafers, Conductivity Type 0.5 m Ω cm – intrinsic, p-, …

SEMI M49-0704 © SEMI 2001, 2004 8

Item Recommended Specification Comment References

5.10 Operating Sequence complete remote control : recipe download,

start, stop, define data evaluation via

SECS/GEM

SEMI E5

5.11 Data Interfaces - SECS/GEM

- optional additionally a mass data standard

transfer protocol (e.g. FTP)

SEMI E5

www.w3.org/Protocols/rfc95

5.12 Material Tracking System

Support

required, details user specific

5.13 Output File Format standardized formats:

- ASCII or XML for measurement results

- IEEE for raw data (floating point)

- JPEG (or equivalent) for raw data (image

data)

ISO/IEC 8859, ISO/IEC

10646-1

www.w3.org, ISO 8879

IEEE 754, IEEE 854

ISO/IEC 10918

5.14 Network Communications

Standards Support

Ethernet, Fast Ethernet IEEE 802

5.15 SECS/GEM required SEMI E5

5.16 ARAMS required SEMI E58

NOTE 1: The particulate contamination PWP value given for the backside has not been established in commercial practice and is under further

consideration by the SEMI Silicon Wafer Committee.

Table 2 Materials to be Measured

Item Recommended Specification Comments References

1 WAFERS

1.1 Kind of Wafers monocrystalline, unpatterned

silicon wafers with layers as

specified in Table 2, Item 1.3.4

SEMI M1

(SEMI M8)

(SEMI M11)

1.2 Wafer Characteristics – dimensional

1.2.1 Wafer Diameter 200 or 300 or 200+300 mm

nominal

SEMI M1

SEMI MF2074

DIN 50441-4

1.2.2 Wafer Thickness 700–850 µm For reclaim wafers

(performance as

outlined in Table 3

might be reduced):

200 mm: 600–850 µ

300 mm: 650–850 µm

SEMI MF1530

DIN 50441-1

1.2.3 Edge Shape rounded SEMI M1

DIN 50441-2

SEMI MF928

1.2.4 Wafer Shape Range 200 mm wfrs: warp <= 100 µm,

300 mm wfrs: warp <= 200 µm

SEMI M1

SEMI MF1390

DIN 50441-5

1.2.5 Fiducial 200 mm wfrs: notch or flat

300 mm wfrs: notch

SEMI M1

SEMI MF671

SEMI MF1152

(DIN 50441-4)

1.2.6 ID Mark(s) 200 mm wfrs: user specific

300 mm wfrs: according to SEMI

standards

content, type location

of ID mark to be

specified

SEMI M1.15

SEMI M12

SEMI M13

SEMI T7

SEMI M49-0704 © SEMI 2001, 2004

Item Recommended Specification Comments References

1.3 Wafer Characteristics – electrical,

optical

1.3.1 Electrical Resistivity of Wafers,

Conductivity Type

0.5 mΩcm – intrinsic, p-, n-type Res: SEMI MF673

DIN 50445

SEMI MF84

DIN 50431

Type: SEMI MF42 or

DIN50432

1.3.2 Thermal Donors annealed and not annealed

1.3.3 Wafer Charge no effect with respect to

measurement

1.3.4 Layers (LTO, poly-Si), Epi LTO: thickness: 150 – 900 nm

uniformity: ≤ 10%

poly-Si: thickness: ≤ 2 µm

uniformity: < 20%

Epitaxial layer: customer specific

1.3.5 Wafer Surface Conditions front surface: polished, annealed,

or epitaxial layer

back surface: polished, acid

and/or caustic etched, layers

according to Item 1.3.4

optional conditions of

both surfaces: etched,

lapped, as cut

Table 3 Metrology Specific Equipment Characteristics

1. REFERENCE WAFER PROPERTIES (These wafer specifications refer only to wafers to be used for verifying the

performance of the measurement equipment, see Section 6.5.18. They do not refer to product wafers.)

130 nm node 90 nm node 65 nm node

Property

nominal nominal nominal

1.1 Thickness (200 mm wafers),

µm

725 725 725

1.2 Thickness (300 mm wafers),

µm

775 775 775

1.3 GBIR, nm 1000 1000 1000

1.4 Site Size local flatness, mm

25*25 26*8 26*8

1.4.1 SBIR, including

partial sites, nm

250 140 125

1.4.2 SFQR, including

partial sites, nm

130 60 45

1.5 Warp, µm

30 30 30

1.6 Nanotopography, 2 mm, P-V,

nm, at 0.05% defective area

20 16 10

1.7 Nanotopography, 10 mm, P-V,

nm, at 0.05% defective area

70 50 35

SEMI M49-0704 © SEMI 2001, 2004 10

2. MEASUREMENT FUNCTIONS

Item Recommended Specification

Technology Generation 130 nm 90 nm

65 nm

Grade A B A B A B

Comments and References

2.1.1 Thickness (Center Point Thickness) SEMI M1, SEMI MF1530

2.1.1.1 Level 3 Variability σ

(µm, 1 σ) ≤ 0.5 ≤ 1 ≤ 0.5 ≤ 1 ≤ 0.5 ≤ 1

2.1.1.2 Matching Tolerance ∆

(µm) ≤ 0.75 ≤ 1.5 ≤ 0.75 ≤ 1.5 ≤ 0.75 ≤ 1.5

2.1.1.3 Bias (µm) ≤ 0.75 ≤1.5 ≤ 0.75 ≤ 1.5 ≤ 0.75 ≤ 1.5

target until certified reference

materials are available

2.1.1.4 Spatial Bandwidth

min

(mm

–1

)

max

(mm

–1

)

Nominal value ± 5% tolerance

2.1.2 Global Flatness (GBIR) SEMI M1 Appendix 1;

SEMI MF1530; JEIDA 43

2.1.2.1 Level 3 Variability σ

(nm, 1 σ) ≤ 30 ≤ 65 ≤ 30 ≤ 65 ≤ 30 ≤ 65

2.1.2.2 Matching Tolerance ∆

(nm) ≤ 50 ≤ 100 ≤ 50 ≤ 100 ≤ 50 ≤ 100

2.1.2.3 Bias (nm)

≤ 50 ≤ 100 ≤ 50 ≤ 100 ≤ 50 ≤ 100

target until certified reference

materials are available

2.1.2.4 Spatial Bandwidth

min

(mm

–1

)

max

(mm

–1

)

Nominal value ± 5% tolerance

2.1.3 Local Flatness (SBIR) SEMI M1 Appendix 1; SEMI

MF1530; JEIDA 43; DIN 50441-5

2.1.3.1 Level 3 Variability σ

(nm, 1 σ) ≤ 8 ≤ 17 ≤ 4.7 ≤ 9.3 ≤ 4.2 ≤ 8.3

2.1.3.2 Matching Tolerance ∆

(nm) ≤ 12 ≤ 26 ≤ 7 ≤ 14 ≤ 6.3 ≤ 12.5

2.1.3.3 Bias (nm)

≤ 12 ≤ 26 ≤ 7 ≤ 14 ≤ 6.3 ≤ 12.5

target until certified reference

materials are available

2.1.3.4 Spatial Bandwidth

min

(mm

–1

)

max

(mm

–1

)

Nominal value ± 5% tolerance

2.1.4 Local Flatness (SFQR) Specifications apply on a site-by-site

basis; SEMI M1 Appendix 1; SEMI

MF1530; JEIDA 43; DIN 50441-5

2.1.4.1 Level 3 Variability σ

(nm, 1 σ) ≤ 4.5 ≤ 9 ≤ 2 ≤ 4 ≤ 1.5 ≤ 3

2.1.4.2 Matching Tolerance ∆

(nm) ≤ 7 ≤ 13 ≤ 3 ≤ 6 ≤ 2.3 ≤ 4.5

2.1.4.3 Bias (nm)

≤ 7 ≤ 13 ≤ 3 ≤ 6 ≤ 2.3 ≤ 4.5

target until certified reference

materials are available

2.1.4.4 Spatial Bandwidth

min

(mm

–1

)

max

(mm

–1

)

Nominal value ± 5% tolerance

2.1.5 Shape (Warp, GMLYMER) SEMI M1 Appendix 2; SEMI

MF1390; JEIDA 43; DIN 50441-5

2.1.5.1 Level 3 Variability σ

(µm, 1 σ) ≤ 1 ≤ 2 ≤ 1 ≤ 2 ≤ 1 ≤ 2

2.1.5.2 Matching Tolerance ∆

(µm) ≤ 1.5 ≤ 3 ≤ 1.5 ≤ 3 ≤ 1.5 ≤ 3

2.1.5.3 Bias (µm) ≤ 1.5 ≤ 3 ≤ 1.5 ≤ 3 ≤ 1.5 ≤ 3

9 The values for variability, matching and bias for the 90 and 65 nm technology nodes are rounded to one significant decimal digit for those

parameters which scale with the technology generations. Otherwise the values for the 130 nm genertaion are repeated.