semi合集-English.pdf - 第5031页

SEMI M18-0704 © SEMI 1990, 2004 17 CUSTOMER: P ART NUMBER: REVISION D ATE: TESTING LEVEL EDI Sub WAFER TEST PIECE Code Param REQUIRED ITEM SPECIFICATION 100% SAMP LE 100% SAMP LE ID ID 21.5 Flatness/Site Acronym 2 :[ ][ …

100%1 / 7923
SEMI M18-0704 © SEMI 1990, 2004 16
16.2 Alignment Precision X max [ ] µm, Y max [ ] µm, Θ max[ ];
Reference Point (Wafer Coordinate System):
x [ ] mm, y [ ] mm
100151
16.3 Pattern Line Width
Tolerance
Tolerance ± [ ] µm 100152
17. BURIED LAYER CHARACTERISTICS
17.1 Dopant [ ]B; [ ]Phos; [ ]Sb; [ ]As 100153
17.2 Diffusion Depth (x
j
) Nominal [ ] ± Tolerance [ ] µm 100154
17.3 Sheet Resistance Nominal [ ] ± Tolerance [ ] Ω/sq 100155
17.4 Pattern Step Height Nominal [ ] ± Tolerance [ ] nm 100156
17.5 Defect Density (Before
Epi)
Not greater than [ ]/cm
2
100157
18. BURIED LAYER PATTERN CHARACTERISTICS AFTER EPI
18.1 Pattern Shift Ratio Nominal [ ] ± Tolerance [ ] 100158
18.2 Pattern Distortion Ratio Max. [ ] 100159
19. OTHER CHARACTERISTICS
Part 5 Annealed Wafer
CUSTOMER:
P
ART NUMBER: REVISION
D
ATE:
TESTING LEVEL EDI Sub
WAFER TEST PIECE
Code Param
REQUIRED
ITEM SPECIFICATION
100% SAMP
LE
100% SAMP
LE
ID ID
20. GENERAL ANNEALED WAFER CHARACTERISTICS
♦
20.1 Annealing Atmosphere [ ]Hydrogen [ ]Argon [ ]Other:
____________
100200
♦
20.2 Co-dopant in Crystal [ ]N [ ]C [ ]Other: 100201
21. MECHANICAL CHARACTERISTICS
21.1 Bow Not greater than [ ] µm 100202
Method [ ]SEMI MF534; [ ]JIS H 611;
[ ]Other:_____
21.2 Warp Not greater than [ ] µm
Method [ ] SEMI MF657; [ ] SEMI MF1390;
[ ]Other:__________
100203
100204
SEMI
MF657
SEMI
MF1390
21.3 Sori Not greater than [ ] µm 100205
21.4 Flatness/Global Acronym
2
: [ ][ ][ ][ ] Value _____µm 100206
Method [ ]SEMI MF1530 [ ]DIN 50441/3 [ ]Other
SEMI M18-0704 © SEMI 1990, 2004 17
CUSTOMER:
P
ART NUMBER: REVISION
D
ATE:
TESTING LEVEL EDI Sub
WAFER TEST PIECE
Code Param
REQUIRED
ITEM SPECIFICATION
100% SAMP
LE
100% SAMP
LE
ID ID
21.5 Flatness/Site Acronym
2
:[ ][ ][ ][ ]
Value ____µm
Site Size __×__ mm
Total Sites __
% Usable Area __
[ ] Include partial sites
[ ] Offset: x = [ ] mm, y = [ ] mm
100207
100208
100209
100210
100211
100212
100213
100214
100224
100225
SF3R
SF3D
SFLR
SFLD
SFQR
SFQD
SBIR
SFSR
SFSD
SBID
21.6 Fixed Quality Area Value: [ ] mm 100215
22. FRONT SURFACE VISUAL INSPECTION CHARACTERISTICS
THE ITEMS LISTED IN THIS SECTION MAY BE
22.01 [ ] Specified According to [ ]SEMI M2 Table 1 or [ ]SEMI M11 Table 1
OR SPECIFIED INDIVIDUALLY
22.1 Stacking Faults
4
[ ]SEMI M( ) Table 1 [ ]Other: 100216
22.2 Slip
4
[ ]SEMI M( ) Table 1 [ ]Other: 100217
22.3 Other Defect
5
[ ]SEMI M( ) Table 1 [ ]Other:
23. BACK SURFACE VISUAL INSPECTION CHARACTERISTICS
23.1 Contamination
4
[ ]SEMI M( ) Table 1; [ ]Other:_____ 100218
23.2 Other
6
24. OTHER CHARACTERISTICS
24.1 Depth of BMD Denuded
Zone
100219
24.2 BMD Density 100220
24.3 Other
7
SEMI M18-0704 © SEMI 1990, 2004 18
Part 6 SOI wafers for CMOS LSI Applications
CUSTOMER:
PART NUMBER:
REVISION
DATE:
TESTING LEVEL EDI Sub
WAFER
TEST PIECE
Code Param
REQUIRED
ITEM
SPECIFICATION
100%
SAMP
LE
100%
SAMP
LE
ID ID
25. SOI LAYER CHARACTERISTICS
♦
25.0 Type of SOI [ ] SIMOX [ ] Bonded 100226
25.1 Starting silicon wafer for
SOI
[ ] Polished [ ] Epitaxial [ ]Others 100227
♦
25.2 Surface Silicon Thickness [ ] (nm) See NOTE 8 100228
Test Method [ ] Spectroscopic ellipsometry
[ ] Spectroscopic reflectometry
[ ] Others
25.3 Surface Silicon Thickness
Mean Value Variation
≤ ± [ ] (nm) See NOTE 9
100229
Test Method [ ] Spectroscopic ellipsometry
[ ] Spectroscopic reflectometry
[ ] Others
♦
25.4 Surface Silicon Thickness
Variation in Wafer
[ ] ≤ ± [ ] (%)
[ ] ≤ ± [ ] (nm)
See NOTE 9
100230
25.5 Crystal Orientation
(100) ± [ ] (degree)
100231
Test Method [ ] X-ray diffraction, [ ] Others:
25.6 Rotation Misalignment
≤ ± [ ] (degree) for Bonded
100232
Test Method [ ] Visual, [ ] Others:
25.7 Edge Exclusion,
Nominal
[ ] (mm) See NOTE 10 100233
25.8 Non-SOI Edge Area
≤ [ ] (mm) for Bonded
100234
Test Method [ ] Visual, [ ] Others:
25.9 Conductivity Type [ ]P-type [ ]N-type 100235
25.10 Dopant [ ]B [ ]P [ ]Others: 100236
Test Method [ ] Secondary ion mass spectroscopy,
[ ] Others
25.11 Dopant Concentration [ ] (atoms /cm
3
) See NOTE 8 100237
Test Method [ ] Secondary ion mass spectroscopy,
[ ] Others:
25.12 SOI Etch Pit
≤ [ ] (/cm
2
)
100238
Test Method [ ] Secco's Etching, [ ] Others:
25.13 Threading Dislocation
≤ [ ] (/cm
2
) for SIMOX
100239
Test Method [ ] Secco's Etching, [ ] Others:
25.14 HF Defect ≤ [ ] (/cm
2
) 100240
Test Method [ ] HF Etching, [ ] Others:
25.15 Void ≤ [ ] (/wafer) for Bonded 100241
Test Method [ ] Automated particle counter,
[ ] Visual, [ ] Others:
25.16 Roughness (Si surface)
rms @ 2 × 2µm
≤ [ ] (nm) 100242
Test Method
[ ] Atomic force microscope,
[ ] Others: