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SEMI P21-92 © SEMI 1992, 2003 3 Figure 1

SEMI P21-92 © SEMI 1992, 2003 2

3.4 Pattern Stitching Accuracy

3.4.1 Definition

• Position errors at the stitching boundary of writing

fields, stripes, and shots.

3.4.2 Expression

• |average value| 1 + 3 σµm (X and Y direction

separately) measured area and number of sampling

points should be clearly described.

3.4.3 Measurement

• Optical coordinates measurement

• Electron beam coordinate measurement

• Coordinates measurement done by self-diagnostic

feature of writing equipment.

• Vernier measurement

• Boundary measurement by SEM image

3.4.4 Requirement

• The pattern should be cross or L marks in both

sides adjacent to the stitching boundary for

coordinate measurement.

• When the optical microscope is used for

measurement, the vernier pattern should be used.

4 Notice

4.1 The following subjects should be agreed upon

beforehand between users and makers in order to

evaluate the above-mentioned writing precision and

accuracy item.

4.1.1 Process Requirements

• Resist Materials

• Coating Condition

• Development Condition

• Process Sequence

• Mask Substrate and Chrome Thin Film Materials

4.1.2 Test Pattern

4.1.3 Measurement Procedure

5 Others

5.1 The following items are not specified in these

guidelines, still it is preferable that these items are

agreed upon beforehand between user and supplier.

5.1.1 Pattern coordinates

5.1.2 Pattern position accuracy

5.1.3 Long-term stability of accuracy

5.1.4 Particles

Figure 1

Figure 2