semi合集-English.pdf - 第5274页

SEMI M45-0703 © SEMI 2001, 2003 5 APPENDIX 1 NOTICE : This appendix was approved as an official par t of SEMI M45 by full letter ballot proced ure, but the recommendations in this appendix are op tional and are not requi…

100%1 / 7923
SEMI M45-0703 © SEMI 2001, 2003 4
5.9 Transportation Logistics
5.9.1 Small quantity shipments or expedited shipments
may require a special secondary container size.
5.9.2 The 300 mm wafer shipping system design must
comprehend both surface and air transportation.
SEMI M45-0703 © SEMI 2001, 2003 5
APPENDIX 1
NOTICE: This appendix was approved as an official part of SEMI M45 by full letter ballot procedure, but the recommendations
in this appendix are optional and are not required to conform to this standard.
A1-1.1 The 300 mm Wafer shipping box must be re-
usable in view of the wafer manufacturing cost and
environmental concerns.
A1-1.2 When the shipping box is re-used, the customer
who received wafers must keep the shipping box in
good condition after opening the package and return to
the wafer supplier.
A1-1.3 The box cleaning process of the supplier can
not remove ink, adhesive, and excessive metal
contamination of the returned shipping box.
A1-1.4 The customers must avoid contaminating the
shipping boxes in this way. The customers must keep
the shipping box separate from those contaminated
conditions. Contaminated shipping boxes must not be
returned to the supplier.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacture' s instructions, product labels,
product data sheets, and other relevant literature,
respecting any materials or equipment mentioned
herein. These standards are subject to change without
notice.
By publications of this standard, Semiconductor
Equipment and Materials International (SEMI) takes no
position respecting the validity of any patent rights or
copyrights asserted in connection with any items
mentioned in this standard. Users of this standard are
expressly advised that determination of any such patent
rights or copyrights, and the risk of infringement of
such rights are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M46-1101
E
© SEMI 2001 1
SEMI M46-1101
E
TEST METHOD FOR MEASURING CARRIER CONCENTRATIONS IN
EPITAXIAL LAYER STRUCTURES BY ECV PROFILING
This test method was technically approved by the Global Compound Semiconductor Committee and is the
direct responsibility of the European Compound Semiconductor Materials Committee. Current edition
approved by the European Regional Standards Committee on June 29, 2001. Initially available at
www.semi.org December 2001; to be published March 2002.
E
This document was editorially modified in November 2001 to correct a typographical error. A change was
made to Section 7.3.3.
1 Purpose
1.1 The purpose of this document is to specify a
method to measure the carrier concentration and carrier
concentration vs. depth profile of epitaxial layers by
Electrochemical Capacitance Voltage ECV profiling.
2 Scope
2.1 This test method covers a procedure for measuring
the carrier concentration of epitaxial layers by ECV
profiling. This method focuses on improving the
accuracy and repeatability of the measurement by
standardizing the test conditions and reporting and by
routine calibration of the measurement.
2.2 This test method is intended to cover the majority
of routine samples measured. However, because of the
number of different materials encountered it cannot
cover every contingency.
2.3 This standard may involve hazardous materials.
This standard does not purport to address safety issues,
if any, associated with its use. It is the responsibility of
the users of this standard to establish appropriate safety
and health practices and determine the applicability of
regulatory limitations prior to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI C1 — Specifications for Reagents
3.2 ASTM Standards
D1125-95 (1999) — Standard Test Methods for
Electrical Conductivity and Resistivity of Water
4 Terminology
4.1 bias — the potential applied to the sample with
respect to a reference electrode.
4.2 capacitance voltage CV measurements — electrical
measurements where the capacitance of a rectifying
barrier is measured as a function of applied bias and is a
measure of the net fixed ionized charge per unit
volume.
4.3 carrier concentration — the net fixed ionized
charge per unit volume. Equal to the free carrier
concentration if the dopant is fully ionized and the
material is free of traps.
4.4 current voltage IV measurements — electrical
measurements where the current through the rectifying
barrier is measured as a function of applied bias.
4.5 dissipation factor — the ratio of the real part to the
imaginary part of the complex admittance. It is a
measure of the non-ideality of the barrier.
4.6 electrochemical — chemical reaction in which
charge transfer takes place via an external circuit.
4.7 epitaxial layer — a layer of single crystal
semiconductor material grown on a host substrate
which determines its orientation.
4.8 excess area — the difference between the wetted
and illuminated areas.
4.9 flatband potential — the intercept on the voltage
axis of the 1/C
2
vs V plot. A measure of the built in
field or barrier height.
4.10 illuminated area — the area of the sample which
can be illuminated during electrochemical etching.
4.11 rectifying barrier — a potential gradient formed
at the junction between two materials which permits the
flow of charge in one direction only.
4.12 reference electrode — half cell which has a
constant electrode potential, such as a saturated calomel
electrode, SCE.
4.13 rest potential — the open circuit potential of the
sample with respect to the reference electrode.
4.14 wetted area — the area of contact between the
electrolyte and the sample.
5 Summary of Method
5.1 In this method, the carrier concentration of the
epitaxial layer is measured by the CV method.
5.1.1 Ohmic contacts are formed on the sample.