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3 SEMI P30-0997 © SEMI 1997, 2004 5 Listed Items The following are desirable items and exam ples for listing in the CD-SEM catalog. 5.1 Equipment name 5.2 Model 5.3 Performance 5.3.1 Throughput ___________ wafers/h (Exam…

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SEMI P30-0997 © SEMI 1997, 2004 2
positioning of a measured pattern, measuring, and
wafer unloading.
4.1.9.4 static repeatability — variations in average
measurement values acquired in a sequence for a
pattern. This is the closeness of agreement between the
measured values obtained by measuring a pattern with
wafer loading, wafer alignment, stage traveling to a
measurement site, positioning of a measured pattern,
measuring, and wafer unloading.
4.1.10 measurement target — kind of measurement
pattern. The measurement pattern, such as line, space,
pitch, hole, box-in-box, etc.
4.1.11 operation method — the control method of
operation sequence. There are three methods: auto,
semi-auto, and manual.
4.1.11.1 automatic operation method — the operation
method controlled by a computer automatically, after an
operator sets a carrier on the equipment. The computer
follows the commands written in a recipe. Uses a
recipe on a computer.
4.1.11.2 manual operation — the operation method
controlled by an operator without a recipe. Uses an
operator.
4.1.11.3 semi-auto operation — the operating method
controlled by a computer and an operator. The operator
confirms the results of each command in a recipe using
an automatic operation. Uses a recipe with an operator.
4.1.12 pattern edge determination method — uses a
computer or an operator to look at the image. This is
the method for determining the edge position of a given
pattern, which is calculated by computer algorithm or
by operator instructions.
4.1.12.1 automatic pattern edge determination — there
are several methods, such as the threshold method, the
linear approximation method, and the curve fitting
method. This is the method used to determine the edge
position automatically by calculating from the line
profile signal of the secondary or back-scattered
electrons. The calculations are performed using the
aforementioned three algorithms.
4.1.12.2 manual pattern edge determination method —
the operator measures the distance between cursors per
image edge area. This method is used to determine the
edge position manually by calculation based on the
width between cursors, which are set to the
measurement pattern edges by operator.
4.1.13 pattern positioning error — distance from the
center of screen after positioning. This is the maximum
distance between the screen center and a target pattern
after pattern positioning.
4.1.14 permissible air vibration — the maximum air
vibration that can provide the guaranteed resolution.
4.1.15 permissible floor loading capability — the
minimum floor loading capability where the equipment
can be settled.
4.1.16 permissible stray magnetic field — the
maximum change in the stray magnetic field that can
provide the guaranteed resolution.
4.1.17 permissible floor vibration
— the maximum
floor vibration that can provide the guaranteed
resolution.
4.1.18 positioning of measured patterns — moving
pattern to the center screen (center of image field).
4.1.19 stage positioning error — variations when
moving stage to a selected location repeatedly without
correction. This is the positioning error of stage, which
occurs when traveling to the same site repeatedly
without electron beam deflection.
4.1.20 stage positioning range — range on a wafer that
can be measured by moving the wafer. This is the
measurable range of a measured wafer placed on a
specimen stage with stage moving.
4.1.21 throughput — the number of processed wafers
(per unit time, which is calculated from the time
required for processing under pre-scheduled
measurement sequence and conditions).
4.1.22 transport — transferring wafer from a wafer
carrier to a specimen stage, or the reverse process.
4.1.23 wafer size — wafer diameter.
3 SEMI P30-0997 © SEMI 1997, 2004
5 Listed Items
The following are desirable items and examples for listing in the CD-SEM catalog.
5.1 Equipment name
5.2 Model
5.3 Performance
5.3.1 Throughput ___________ wafers/h (Example: 30 wafers / h)
5.3.2 Image resolution ___________ nm (Example: 5 nm)
5.3.3 Measurement precision
5.3.3.1 Static repeatability ___________ nm ( 3
n-1
) (Example: 5 nm ( 3
n-1
))
5.3.3.2 Dynamic repeatability ___________ nm ( 3
n-1
) (Example: 5 nm ( 3
n-1
))
5.3.3.3 Reproducibility ___________ nm ( 3
n-1
) (Example: 5 nm ( 3
n-1
))
5.3.3.4 Linearity ___________ nm ( 3
n-1
) (Example: 5 nm ( 3
n-1
))
5.3.3.5 Precision guaranteed range ___________ µm –
___________ µm
(Example: 0.2 µm ~ 10 µm, 5,000 ~
200,000 x)
5.4 Function
5.4.1 Wafer transport/Stage system
5.4.1.1 Transport method ___________ (Example: double cassette support
to C to C method)
5.4.1.2 Stage stopping error ___________µm (Example: ± µm)
5.4.1.3 Wafer size ___________ mm (Example: 100, 125, 150, 200 mm)
5.4.1.4 Positioning range ___________ (Example: whole wafer surface)
5.4.2 Alignment system
5.4.2.1 Alignment method ___________ (Example: uses optical image)
5.4.2.2 Alignment precision ___________± µm (Example: µm)
5.4.2.3 Pattern positioning method ___________ (Example: moving cursor)
5.4.2.4 Pattern positioning precision ___________ (Example: ± 0.1 µm)
5.4.3 Electro-optical system
5.4.3.1 Electron gun type ___________ (Example: LaB6 / schottky / C-FE)
5.4.3.2 Accelerating voltage ___________ (Example: 0.5 1.5 kV, 0.1 kV
step)
5.4.3.3 Probe current ___________ (Example: 0.2 10 pA)
5.4.3.4 Magnification ___________ (Example: 100 200,000 times)
5.4.4 Measurement
5.4.4.1 Measurement pattern ___________ (Example: line / hole / overlay)
5.4.4.2 Pattern determination method ___________ (Example: automatic (pattern
recognition) / manual/cursor)
5.4.4.3 Pattern edge determination
method
___________ (Example: automatic (line
approximation) / threshold method)
5.4.4.4 Operation method ___________ (Example: auto / semiauto / manual)
5.4.4.5 Communication protocol ___________ (Example: SECS)
5.4.5 Vacuum exhaust system ___________ (Example: TMP ( 500 L / s ) 1 unit,
SIP ( 20 L / s ) 2 units )
5.5 Installation conditions
5.5.1 Dimensions width______mm,
depth______mm,
height______mm
(May be included in the standard
diagram.)
5.5.2 Standard layout diagram
5.5.3 Mass ___________ kg
5.5.4 Permissible environmental
conditions
5.5.4.1 Loading capability ___________ Kg / m
2
5.5.4.2 Stray magnetic field, ___________ T p p
SEMI P30-0997 © SEMI 1997, 2004 4
maximum
5.5.4.3 Floor vibration, maximum ___________ dB
5.5.4.4 Air vibration, maximum ___________ dB
5.5.5 Electric power supply ___________ V/,
___________ /,
___________ kVA
5.5.6 Water supply ___________ L/min.
5.5.7 High-pressure gas supply ___________ (Example: Dry air, N
2
)
5.5.8 Reference standard (Example: SEMI PXX-XX)
6 Listed Items Guide (reference)
6.1 Equipment Name — List
6.2 Model — List
6.3 Throughput — To measure throughput, large-size
wafers are generally used. List the number of processes
per hour when 5-point measurement has been
continuously processed. When wafers other than the
maximum wafer sizes are used, list the wafer size.
Also, list if the operator should intervene. The
measurement position should be the center of wafer and
the outside 4 points from 1/2 of the diameter on the
diagonal line of the rectangle inscribing the wafer.
6.4 Please note that there are the following two
methods:
6.4.1 The number of wafers that can be processed per
hour for 1 wafer/lot processing.
6.4.2 The number of wafers that can be processed per
hour for 25 wafers/lot continuous processing.
6.5 Static Repeatability — Use 3
n-1
and nm as the
unit of measurement. When not listed, the sample
should be the photoresist pattern and the number of
measurement cycles should be 10.
6.6 Dynamic Repeatability — Use 3
n-1
and nm as the
unit of measurement. When not listed, the sample
should be the photoresist pattern, and the number of
measurement cycles should be 10. In addition, one
cycle of measurement should be just one cycle.
6.7 Reproducibility — Use 3
n-1
and nm as the unit of
measurement. When not listed, the sample should be
the photoresist pattern.
6.8 Image Resolution — The resolution should be
listed in nm. In addition, the accelerating voltage
acquired should be listed. When not listed, the sample
should use gold deposition, and the conversion should
be done from the photo image.
6.9 Measurement Precision Warranty Range —
Should be listed in µm. When the precision depends on
magnification, the listing of magnification is desirable.
6.10 Operation Method — List methods that can be
used in auto, semi-auto, and manual.
6.11 Transport Method — List double-cassette
supporting C to C method and/or SMIF supporting C to
C method.
6.12 Wafer Size — List dimensions defined in SEMI
M1. When creating guidelines, the dimensions are as
follows: 2 inch, 3 inch, 100 mm, 125 mm, 150 mm, 200
mm, 300 mm, and 400 mm.
6.13 Measurable Range — List ranges that can be
observed and measured through normal use in mm.
6.14 Stage Stopping Error — List the stopping error in
mm when moving the maximum distance in both X and
Y directions.
6.15 Alignment Method — List methods using optical
microscopes, SEM images, and other.
6.16 Alignment Precision — List in µm.
6.17 Measuring Pattern Identification Method — List
manual and auto and the content thereof.
6.18 Pattern Edge Determination — List manual and
auto and the content thereof.
6.19 Measuring Pattern Positioning Method — List
manual and auto and the content thereof.
6.20 Measuring Pattern Positioning Accuracy — List
in µm.
6.21 Magnification — List range.
6.22 Accelerating Voltage — List range in V or kV
units.
6.23 Electron Gun — List electron gun type.
6.24 Vacuum Exhaust System — List pump type,
exhaust volume, and number of units.
6.25 Communication Protocol — List external
computer and method of communication.
6.26 Dimensions — List block width, depth, and height
per equipment block in mm. This may be listed in the
standard layout diagram.