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SEMI P31-0304 © SEMI 1997, 2004 2 8 Delay Time Dependency NOTE 3: This section defines process cond itions a nd procedures to obtain the delay time dependency. 8.1 Resist Coating and Pre-baking — Resist should be c o ate…

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SEMI P31-0304 © SEMI 1997, 2004 1
SEMI P31-0304
PRACTICE FOR CATALOG PUBLICATION FOR CHEMICAL
AMPLIFIED (CA) PHOTORESIST PARAMETER
This practice was technically approved by the Global Micropatterning Committee and is the direct
responsibility of the Japanese Micropatterning Committee. Current edition approved by the Japanese
Regional Standards Committee on January 9, 2004. Initially available at www.semi.org February 2004; to be
published March 2004. Originally published September 1997.
1 Purpose
1.1 The purpose of this document is to provide a
baseline for publication of chemical amplified (CA)
photoresist parameters.
2 Scope
2.1 This document applies to CA photoresist used for
semiconductor manufacturing.
2.2 This document is used as the guide to evaluate
photoresist process parameters.
2.3 This document is not applicable for quality
assurance.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
None.
4 Terminology
4.1 Abbreviations and Acronyms
4.1.1 PEB — post exposure bake
5 Description
NOTE 1: The following parameters for CA photoresist
publication and test conditions should be described in the
catalog.
5.1 Resist, overcoat and developer commercial name
5.2 Temperature and humidity
5.3 Environmental conditions (see Section 6)
5.4 Ammonia concentration measurement method (see
Section 7)
5.5 Delay time dependency (see Section 8)
5.6 PEB temperature dependency (see Section 9)
5.7 PEB time dependency (see Section 10)
5.8 Substrate dependency (see Section 11)
5.9 Measurement Conditions
5.9.1 Resist Coating and Development
5.9.1.1 Resist baking method (contact baking or
proximity baking)
5.9.1.2 Resist pre-baking temperature and time
5.9.1.3 Resist PEB temperature and time
5.9.1.4 Development time
5.9.1.5 Resist thickness
5.9.2 Exposure
5.9.2.1 Illumination conditions (NA, σ, etc. )
5.10 Equipment Name
5.10.1 Exposure equipment
5.10.2 SEM equipment
5.10.3 Ammonia concentration measurement equip-
ment
6 Environmental Conditions
6.1 Ammonia Concentration — It is recommended to
measure all CA photoresist parameters under the
condition that the ammonia concentration is less than
10 µg/m
3
.
NOTE 2: CA photoresist is sensitive to the atmosphere,
especially to ammonia. Acid from photoacid generator upon
exposure is neutralized by the basic material in atmosphere
like ammonia.
7 Ammonia Concentration Measurement
Method
7.1 The ammonia concentration is measured by ion
chromatography or another method which is capable to
determine the ammonia concentration quantitatively
less than 10 µg/m
3
. The measurement equipment is
calibrated with a standard ammonia solution.
SEMI P31-0304 © SEMI 1997, 2004 2
8 Delay Time Dependency
NOTE 3: This section defines process conditions and procedures to obtain the delay time dependency.
8.1 Resist Coating and Pre-baking — Resist should be coated on a substrate. Suppliers should be notified of the
kind of substrate and underlying film. After pre-baking, the resist thickness should be chosen the bottom of swing
curve between 0.3–0.5 µm. Thickness could be changed in accordance with exposure wavelength. The actual
thickness should be notified.
8.2 Delay Time — Delay time between resist coating and exposure, exposure and PEB, and PEB and development
used for obtaining delay time dependency parameters are defined in Table 1.
Table 1 Delay Time Condition
Resist coating to exposure delay time
0 min. 1 hour 6 hour 24 hour
NOTE: Normal sequential procedure without intentional delay between exposure and PEB as well as PEB and development.
Exposure to PEB delay time
0 min. 10 min. 30 min. 1 hour 2 hour 24 hour
NOTE: Normal sequential procedure without intentional delay between resist coating and exposure as well as PEB and
development.
PEB to development delay time
0 min. 10 min. 30 min. 1 hour 24 hour
NOTE: Normal sequential procedure without intentional delay between resist coating and exposure time as well as exposure and
PEB.
NOTE: Zero minutes (0 min.) is defined as normal sequential procedure without intentional delay.
8.3 Measurement
8.3.1 After each time delay, fabricated 0.10 µm and 0.15 µm line and space patterns should be measured by SEM.
8.3.2 Record the measured pattern size.
8.3.3 Make the plotting of pattern size vs. delay time.
9 PEB Temperature Dependency
NOTE 4: This section defines process conditions and procedures to obtain the PEB temperature dependency.
9.1 Resist Coating and Pre-baking — Resist should be coated on a substrate. Suppliers should be notified of the
kind of substrate and underlying film. After pre-baking, the resist thickness should be chose the bottom of the swing
curve between 0.3–0.5 µm. Thickness could be changed in accordance with exposure wavelength. The actual
thickness should be notified.
9.2 Measurement
9.2.1 Ten points of temperature should be selected within ± 20 °C from the optimized PEB temperature.
9.2.2 Record the measured pattern size.
9.2.3 Make the plotting of pattern width vs. PEB temperature. At least 6 to 8 points of pattern width should be
plotted within the deviation of ± 10% from the optimized line width of 0.10 µm and 0.15 µm line and space patterns.
9.2.4 The cross section of resist patterns is observed and compared each other with standard sample. One should be
selected from the optimized condition and the other one should be selected from the sample deviated around 10%
from standard one.
SEMI P31-0304 © SEMI 1997, 2004 3
10 PEB Time Dependency
NOTE 5: This section defines process conditions and
procedures to obtain the PEB time dependency.
10.1 Resist Coating and Pre-baking — Resist should
be coated on a substrate. Suppliers should be notified of
the kind of substrate and underlying film. After pre-
baking, the resist thickness should be chosen the bottom
of swing curve between 0.3–0.5 µm. Thickness could
be changed in accordance with exposure wavelength.
The actual thickness should be notified.
10.2 PEB Time — PEB time should be selected from
time 30 sec., 60 sec., 90 sec., 120 sec., 180 sec. on the
optimized PEB temperature.
10.3 Measurement
10.3.1 Fabricated 0.10 µm and 0.15 µm line and space
patterns should be measured by SEM.
10.3.2 Record the measured pattern size.
10.3.3 Make the plotting of pattern size vs. PEB time.
11 Substrate Dependency
11.1 Resist Coating and Pre-baking — Resist should
be coated on a substrate. Suppliers should be notified of
the kind of substrate and underlying film. After pre-
baking, the resist thickness should be chose the bottom
of swing curve between 0.3–0.5 µm. Thickness could
be changed in accordance with exposure wavelength.
The actual thickness should be notified.
11.2 Observation — Fabricated 0.10 µm and 0.15 µm
line and space patterns and more than 1 µm isolated
patterns should be observed by cross sectional SEM.
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representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
standards are subject to change without notice.
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compliance with this standard may require use of
copyrighted material or of an invention covered by
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takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
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of such rights, are entirely their own responsibility.
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