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SEMI P34-0200 © SEMI 2000 1 SEMI P34-0200 SPECIFICA TION FOR 230 mm SQUA RE PHOTOM A SK SUBSTR ATES This s pecif ication was te chnically approv ed by the G lobal Mask and Mas k Equipment Comm ittee and is the direct res…

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SEMI P33-0998 © SEMI 199811
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SEMI P34-0200 © SEMI 20001
SEMI P34-0200
SPECIFICATION FOR 230 mm SQUARE PHOTOMASK SUBSTRATES
This specification was technically approved by the Global Mask and Mask Equipment Committee and is the
direct responsibility of the North American Microlithography Committee. Current edition approved by the
North American Regional Standards Committee on September 3, 1999. Initially available at www.semi.org
November 1999; to be published February 2000.
1 Purpose
1.1 To define the standard requirements for nominally
square photomask substrates of 230 mm nominal edge
length.
2 Scope
2.1 This specification covers information pertaining to
substrates for 230 mm square photomasks. This
information includes, but is not limited to, physical
dimensions, material properties, and testing and
measurement criteria.
2.2 This standard does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
3 Referenced Standards
3.1 ANSI Standard
1
ANSI/ASQC Z1.4 — Sampling Procedures and Tables
for Inspection by Attributes
3.2 ASTM Standard
2
ASTM E228 — Standard Test Method For Linear
Thermal Expansion of Solid Materials With a Vitreous
Silica Dilatometer
3.3 ISO Standard
3
ISO 14644-1 — Cleanrooms and associated controlled
environments
NOTE 1: As listed or revised, all documents cited shall be the
latest publications of adopted standards.
4 Terminology
4.1 230 mm the nominal edge length for the reticle
generation defined in this specification. Also referred to
as “9 inch” size.
1 American National Standards Institute, 11 West 42nd Street, 13
th
Floor, New York, NY 10036
2 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, PA 19428-2959
3 ISO Central Secretariat, 1, rue de Varembé, Case postale 56,
CH-1211 Genève 20, Switzerland
4.2 corner chamfer the bevel found in one corner
of the substrate, in excess of the edge chamfer, as
defined in Section 9.3 and Figure 6.
4.3 critical side major side inte nded for patterning.
The critical side has no chamfered corner(s) (see
Section 9.3), and has flatness requirement equal or
better than the non-critical side (see Section 8.1).
4.4 edge chamfer the bevel found on all
intersections between major and minor sides, as defined
in Section 6.2 and Figure 3.
4.5 non-critical side major side not intended for
patterning. Any and all chamfered corners are on the
non-critical side (see Section 9.3 and Figures 5 and 6).
5 Ordering Information
5.1 Purchase orders for photomask substrates fur-
nished to this specification shall include the following:
5.1.1 Nominal edge length, nominal thickness, edge
criteria including straightness and squareness, and
parallelism of major sides (see Section 6); straightness
shall be measured on all four minor sides;
5.1.2 Material (see Section 7);
5.1.3 Flatness quality area and flatness Total Indicated
Reading (T.I.R.; see Section 8);
5.1.4 Visual quality area and defect limits (see Section
9); and
5.1.5 Lot acceptance criteria (see Section 10).
6 Dimensions and Permissi ble Variations
6.1 The substrates shall conform to the dimensional
tolerances appropriate to the nominal edge length and
thickness as listed in Table 1. Dimensions are
illustrated in Figure 1 and a fixture for measuring the
squareness dimensions is shown in Figure 2.
6.2 Substrates shall have chamfered edges between
major and minor sides, and rounded corners between
minor sides. The edges shall conform to the dimen-
sional tolerances appropriate to the nominal thickness
listed in Table 2. Dimensions are illustrated in Figure 3.
6.3 The major sides of substrates shall be parallel
within 5.0 µm along both major axes. Measurements
SEMI P34-0200 © SEMI 2000 2
are taken within the flatness quality area, along both
major axes. Calculation of parallelism is illustrated in
Figure 7.
7 Material Specifications
7.1 Substrate material shall be specified as fused silica
(quartz). Fused silica is considered to be ultra low
thermal expansion (ULTE) class material.
7.2 Substrate materials shall conform to thermal
expansion and optical transmittance tolerances
specified in Table 3.
7.3 Selected physical properties of fused silica are
provided for information only in Appendix 1.
8 Flatness Specifications
8.1 Substrates shall be supplied with two major sides
having a flatness (T.I.R.) of 1, 2, or 5 µm over a
flatness quality area as defined in Figure 4a or Figure
4b. Sides are not required to have equivalent flatness.
NOTE 2: Flatness of 0.5 µm is very desirable for
semiconductor production, and equipment suppliers may want
to consider this in their designs.
9 Visual Criteria
9.1 A visual quality area, which may or may not
correspond with the flatness quality area, shall be
agreed upon between the user and supplier.
9.2 Each substrate shall not have more defects than
listed in Table 4. This table includes limits for the
following types of defects:
9.2.1 Internal defects in the visual quality area,
9.2.2 Critical side surface defects in the visual quality
area,
9.2.3 Non-critical side surface defects in the visual
quality area, and
9.2.4 Defects outside the visual quality area.
9.3 Fused silica substrates shall be identified with one
corner chamfer as shown in Figure 5. Dimensions of the
chamfer shall be as specified in Figure 6. The corner
chamfer is made only on the non-critical side of the
substrate.
NOTE 3: This configuration of corner chamfers is different
than the configuration used for smaller ULTE class material
substrates as defined in SEMI P1.
10 Sampling
10.1 Unless otherwise specified, appropriate sample
sizes shall be selected from each lot in accordance with
ANSI/ASQC Z1.4. Each quality characteristic shall be
assigned an acceptable quality level (AQL) in
accordance with ANSI/ASQC Z1.4 definitions for
critical, major, and minor classifications. If desired, and
so specified in the contract or order, each of these
classifications may alternatively be assigned cumulative
AQL values. Inspection levels shall be agreed upon
between user and supplier.
11 Test Methods
11.1 Thermal Expansion — Determine in accordance
with ASTM E228.
11.2 Transmission (to be agreed upon between user
and supplier).
11.3 Flatness (to be agreed upon between user and
supplier).
11.4 Visual (to be agreed upon between user and
supplier).
11.5 Parallelism (to be agreed upon between user and
supplier; non-contact methods are preferred).
12 Handling
12.1 Substrates are to be handled on the edges only.
When human handling is required, substrates are to be
handled with gloves approved for cleanroom use.
13 Orientation
13.1 For fused silica substrates with a single corner
chamfer (see Section 9.3), it is recommended that all
orientation be performed referencing the corner of the
non-critical side diagonally opposite the corner
chamfer. The corner for orientation signifies two
orientation edges for positioning of the substrate. One
edge shall be used for rotation baseline by two points.
The other edge shall be used for positioning by one
point. See Figure 8 for more information.
14 Certification
14.1 Upon request of the purchaser in the contract or
order, a manufacturer’s or supplier’s certification that
the material was manufactured and tested in accordance
with this specification, together with a report of the test
results, shall be furnished at the time of shipment.
15 Packing and Marking
15.1 Substrates shall be packed in a class 5 environ-
ment as defined by ISO 14644. Carriers shall be
designed to prevent substrate-to-substrate contact, and
to protect the substrates from contamination in handling
and transit. Substrates shall be shipped with the critical
side toward the front or bottom of the shipping carrier,
depending on carrier configuration. The substrate ship-