semi合集-English.pdf - 第5423页
SEMI M59-0305 © SEMI 2005 4 4.63 XLS — extended light scatterer, a relatively large surf ace defect on silicon wafers, such as scratches and regions of high surface ro ughness. 5 Definitions 5.1 accept or — an im purity …
SEMI M59-0305 © SEMI 2005 3
4.32 JIS — Japan Industrial Standard, standards published by the Japanese Standards Association.
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4.33 LLS — localized light scatterer.
4.34 LPD — light point defect, a term formerly widely used, but now superseded by the term LLS.
4.35 MAE — mixed acid etchant.
4.36 MCz — magnetic Czochralski, a type of crystal growth that generally yields crystals with lower oxygen
content than Cz growth.
4.37 NTD — neutron transmutation doped, a method for forming high resistivity n-type silicon.
4.38 OSF — oxidation induced stacking fault, a defect in silicon wafers.
4.39 P — phosphorus, an n-type dopant in silicon.
4.40 ppba — parts per billion atomic.
4.41 ppbw — parts per billion by weight.
4.42 ppma — parts per million atomic.
4.43 ppmw — parts per million by weight.
4.44 PSD — power spectral density.
4.45 PTFE — polytetrafluoroethylene, an HF-resistant material for sample bottles, lids, and tongs.
4.46 RDS — reference data set.
4.47 rf — radio frequency.
4.48 RPD — reference plane deviation.
4.49 RSF — relative sensitivity factor, used in TXRF analysis of surface metals to relate the concentrations of a
variety of elements to the calibration element.
4.50 Sb — antimony, an n-type dopant in silicon.
4.51 SCFM — standard cubic feet per minute.
4.52 SDS — sample data set.
4.53 SFQR — the most commonly used type of site flatness, see Appendix 1 of SEMI M1 for other types of site
flatness.
4.54 Si
— silicon.
4.55 SIMS — secondary ion mass spectroscopy, a method for analysis of impurities.
4.56 SPC — statistical process control.
4.57 SRM — registered trademark for a CRM produced by the National Institute for Standards and Technology.
4.58 SSIS — scanning surface inspection system, an automated instrument for examining the surface of silicon
wafers for LLSs and XLSs.
4.59 TIR — total indicator reading (also known as total indicator runout).
4.60 TTV — total thickness variation.
4.61 TXRF — total reflection x-ray reflectance spectroscopy, a surface metal analysis technique.
4.62 VPD — vapor phase decomposition, a method for dissolving an oxide film containing impurities to be
examined by means of hydrofluoric (HF) acid vapor.
6 Japanese Standards Association, 1-24, Akasaka 4-Chome, Minato-ku, Tokyo 107-8440, Japan. Telephone: 81.3.3583.8005; Fax:
81.3.3586.2014 Website:
www.jsa.or.jp
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SEMI M59-0305 © SEMI 2005 4
4.63 XLS — extended light scatterer, a relatively large surface defect on silicon wafers, such as scratches and
regions of high surface roughness.
5 Definitions
5.1 acceptor — an impurity in a semiconductor that accepts electrons excited from the valence band, leading to hole
conduction.
5.2 anisotropic, adj. — exhibiting different physical properties in differing crystallographic directions.
5.3 anisotropic etch — a selective etch that exhibits an accelerated etch rate along specific crystallographic
directions.
5.3.1 Discussion — Anisotropic etches are used to determine crystal orientation, to fabricate micromechanical
structures, and to facilitate dielectric component isolation.
5.4 annealed wafer — wafer that has a defect (COP) free zone near the surface resulting from high temperature
annealing under a neutral or reducing atmosphere.
5.5 back surface — the exposed surface opposite to that upon which active semiconductor devices have been or will
be fabricated.
5.6 backseal — a film of silicon dioxide or other insulator placed over the back surface of a silicon wafer to inhibit
outdiffusion of the majority dopant impurity.
5.7 backside — not preferred, use back surface.
5.8 bow — the deviation of the center point of the median surface of a free, unclamped wafer from a median-surface
reference plane established by three points equally spaced on a circle with diameter a specified amount less than the
nominal diameter of the wafer.
5.9 carrier — an entity capable of carrying electric charge through a solid, for example, valence holes and
conduction electrons in semiconductors; also known as charge carrier.
5.10 chem-mechanical polish — a process for the removal of surface material from the wafer that uses chemical and
mechanical actions to achieve a mirror-like surface for subsequent processing.
5.11 chip — region where material has been unintentionally removed from the surface or edge of the wafer.
5.12 cleavage plane — a crystallographically preferred fracture plane.
5.13 concentration — relative amount of a minority constituent of a mixture to the majority constituent (for
example parts per million, parts per billion, or percent) by either volume or weight.
5.14 conductivity (electrical), [(·cm)
1
] — a measure of the ease with which charge carriers flow in a material;
the reciprocal of resistivity.
5.14.1 Discussion — In a semiconductor, the conductivity is proportional to the product of free carrier density,
electron electrical charge, and carrier mobility. Most variant of all crystal properties, conductivity can range over 13
orders of magnitude. Conductivity can be locally modified by temperature, carrier injection, irradiation, or magnetic
field.
5.15 conductivity type — a property that identifies the majority charge carrier in the semiconductor; see also n-type,
p-type.
5.16 contaminant, particulate — see localized light scatterer.
5.17 contamination, area — matter, unintentionally added to the surface of a wafer, of extent greater than a single
localized light scatterer.
5.17.1 Discussion — Area contamination, a type of extended light scatterer, may be foreign matter on the wafer
surface resulting from chuck marks, finger or glove prints, stains, wax or solvent residues, etc.
5.18 contamination, particulate — a particle or particles on the surface of a wafer, see localized light scatterer.
5.19 crack — cleavage or fracture that extends to the surface of a wafer.
SEMI M59-0305 © SEMI 2005 5
5.20 crater — surface feature with irregular closed ridges and smooth central regions.
5.21 Crow’s foot — intersecting cracks in a pattern resembling a “crow's foot” (Y) on (111) surfaces and a cross (+)
on (100) surfaces.
5.22 crystal defect — departure from the ideal arrangement of atoms in a crystal.
5.23 crystal indices — see Miller indices.
5.24 crystal originated pit, COP — a small pit or plurality of small pits introduced during crystal growth that act as
an LLS when they intersect the surface of a wafer.
5.24.1 Discussion — Because they act in some ways similarly to particles when viewed with an SSIS, this defect
was originally called a crystal originated particle. Modern SSISs can, however, generally distinguish COPs from
particles. Surface cleaning or light etching frequently increases the size and number of COPs observed, when they
are present.
5.25 crystallographic notation — a symbolism based on Miller indices used to label planes and directions in a
crystal as follows:
plane (111)
family of planes {111}
direction [111]
family of directions <111>
5.26 denuded zone — a volume in a wafer, usually located just under the front surface, in which the oxygen content
has been lowered so that the bulk microdefect (oxide precipitate) density is reduced.
5.27 diameter, of a semiconductor wafer — the linear dimension across the surface of a circular wafer that contains
the wafer center and excludes flats or other peripheral fiduciary geometries.
5.28 dimple — a shallow depression with gently sloping sides that exhibits a concave, spheroidal shape and is
visible to the unaided eye under proper lighting conditions.
5.29 dislocation etch pit — a pit generated by a preferential etch where a dislocation meets the surface of a wafer.
5.30 donor — an impurity or imperfection in a semiconductor that donates electrons to the conduction band, leading
to electron conduction.
5.31 dopant — a chemical element, usually from the third or fifth columns of the periodic table, incorporated in
trace amounts in a silicon crystal to establish its conductivity type and resistivity.
5.32 dopant striation rings — helical features on the surface of a silicon wafer associated with local variations in
impurity concentration.
5.33 doping, v. — addition of specific impurities to a semiconductor to control the electrical resistivity.
5.34 edge exclusion, nominal, EE — the distance from the FQA boundary to the periphery of a wafer of nominal
dimensions.
5.35 edge profile — on edge contoured wafers (whose edges have been shaped chemically or mechanically), a
description of the contour of the boundary of the wafer that joins the front and back surfaces.
5.36 etch — a solution, a mixture of solutions, or a mixture of gases that attacks the surfaces of a film or substrate,
removing material either selectively or nonselectively.
5.37 etch pit — a pit, resulting from preferential etching, localized on the surface of a wafer at a crystal defect or
stressed region.
5.38 extended light scatterer (XLS) — a feature larger than the spatial resolution of the inspection equipment, on or
in a wafer surface, resulting in increased light scattering intensity relative to that of the surrounding wafer surface.
5.38.1 Discussion — Origins of XLSs include area contamination and unresolved clusters of localized light
scatterers, such as particles or COPs. When oberved by the unaided eye, an XLS can usually be seen under high