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SEMI M6-1000 © SEMI 1981, 2000 2 3.3 DIN Standards 2 50430 — Messung des spezifischen elektris c hen Wid ersta ndes vo n sta bfor migen Ei nkrist alle n au s Silicium oder Germanium mit de m Zwei-Sonden- Gleichstrom-Verf…
SEMI M6-1000 © SEMI 1981, 20001
SEMI M6-1000
SPECIFICATION FOR SILICON WAFERS FOR USE AS
PHOTOVOLTAIC SOLAR CELLS
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the European Materials Committee. Current edition approved by the European Regional
Standards Committee on July 28, 2000. Initially available at www.semi.org September 2000; to be published
October 2000. Originally published in 1981; previously published in 1985.
NOTE: This document replaces the previous version of SEMI M6 and M6.1, M6.2, M6.3, M6.4, and M6.5 in
their entirety.
1 Purpose
1.1 This specification covers the r equirements for
silicon wafers for use in photovoltaic (PV) solar cell
manufacture.
2 Scope
2.1 The dimensional characteristic s, crystalline defects
and commonly used wafer electronic properties are
described. Two classes of crystalline silicon materials
are recognized: monocrystalline and multicrystalline.
2.2 This standard does not purport to address safety
issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
2.3 SI (System International) units are used
throughout.
3 Referenced Standards
NOTE 1: The specification recognizes only two discrete
material forms monocrystalline and multicrystalline. In the
monocrystalline form one crystallographic orientation
describes the whole wafer and in the multicrystalline case
there is more than one crystallographic orientation present.
3.1 SEMI Standard
SEMI M1 — Specifications for Polished
Monocrystalline Silicon Wafers
3.2 ASTM Standards
1
E 122 — Standard Practice for Choice of Sample Size
to Estimate the Average for a Characteristic of a Lot or
Process
F 26 — Standard Test Methods for Determining the
Orientation of a Semiconductive Single Crystal
F 28 — Standard Test Methods for Minority-Carrier
Lifetime in Bulk Germanium and Silicon by
Measurement of Photoconductivity Decay
1 American Society for Testing and Materials, 100 Barr Harbor
Drive, West Conshohocken, PA 19428-2959
F 42 — Standard Test Methods for Conductivity Type
of Extrinsic Semiconducting Materials
F 43 — Standard Test Methods for Resistivity of
Semiconductor Materials
F 84 — Standard Test Method for Measuring
Resistivity of Silicon Wafers with an In-Line Four-
Point Probe
F 391 — Standard Test Methods for Minority Carrier
Diffusion Length in Extrinsic Semiconductors by
Measurement of Steady-State Surface Photovoltage
F 398 — Standard Test Method for Majority Carrier
Concentration in Semiconductors by Measurement of
Wavenumber or Wavelength of the Plasma Resonance
Minimum
F 533 — Standard Test method for Thickness and
Thickness Variation of Silicon Wafers
F 613 — Standard Test Method for Measuring
Diameter of Semiconductor Wafers
F 657 — Standard Test Method for Measuring Warp
and Total Thickness Variation on Silicon Wafers by
Noncontact Scanning
F 673 — Standard Test Methods for Measuring
Resistivity of Semiconductor Slices or Sheet Resistance
of Semiconductor Films with a Noncontact Eddy-
Current Gage
F 1188 — Standard Test Method for Interstitial Atomic
Oxygen Content of Silicon by Infrared Absorption
F 1391 — Standard Test Method for Substitutional
Atomic Carbon Content of Silicon by Infrared
Absorption
F 1535 — Standard Test Method for Carrier
Recombination Lifetime in Silicon Wafers by
Noncontact Measurement of Photoconductivity Decay
by Microwave Reflectance
F 1619 — Standard Test Method for Measurement of
Interstitial Oxygen Content of Silicon Wafers by
Infrared Absorption Spectroscopy with p-Polarized
Radiation Incident at the Brewster Angle
SEMI M6-1000 © SEMI 1981, 2000 2
3.3 DIN Standards
2
50430 — Messung des spezifischen elektrischen
Widerstandes von stabformigen Einkristallen aus
Silicium oder Germanium mit dem Zwei-Sonden-
Gleichstrom-Verfahren (Measurement of the Electrical
Resistivity of Silicon or Germanium single Crystals in
Bars by means of the Two-Point-Probe Direct Current
Method)
50431 — Messung des spezifischen elektrischen
Widerstandes von Einkristallen aus Silicium oder
Germanium mit dem Vier-Sonden-Gleichstrom-
Verfahren bei linearer Anordnung der Sonden
(Measurement of the Electrical Resistivity of Silicon or
Germanium Single Crystals by Means of the Four-
Point-Probe Direct Current method with collinear Four
Probe Array)
50432 — Bestimmung des Leitungstyps von Silicium
oder Germanium mittels Richttest oder Thermosonde
(Determination of the Conductivity Type of Silicon or
Germanium by Means of Rectification Test or Hot-
Probe)
50433-1 — Bestimmung der Orientierung von
Einkristallen mit einem Roentgengoniometer
(Determining the orientation of Single Crystals by
Means of X-Ray Diffraction)
50433-2 — Bestimmung der Orientierung von
Einkristallen nach der Lichtfigurenmethode
(Determining the orientation of Single crystals by
Means of Optical Reflection Figure)
50433-3 — Bestimmung der Orientierung von
Einkristallen mittels Laue-Rueckstrahl-Verfahren
(Determination of the Orientation of Single Crystals by
Means of Laue Back Scattering)
50438-1 — Bestimmung des Verunreinigungsgehaltes
in Silicium mittels lnfrarot-Absorption - Teil 1:
Sauerstoff (Determination of impurity Content in
silicon by Infrared Absorption - Part 1: oxygen)
50438-2 — Bestimmung des Verunreinigungsgehaltes
in Silicium mittels Infrarot-Absorption; Kohlenstoff
(Determination of Impurity Content in Silicon by
infrared Absorption; Carbon)
50441-1 — Messung der geometrischen Dimensionen
von Halbleiterscheiben - Teil 1: Dicke und
Dickenvariation (Determination of the Geometric
Dimensions of Semiconductor Wafers; Part 1:
Measurement of Thickness)
2 Deutches Institut für Normung e.V., Beuth Verlag GmbH,
Burggrafenstrasse 4-10, D-10787 Berlin, Germany
3.4 ASQC standard
3
ANSI/ASQC Z1.4 — Sampling Procedures and Tables
for Inspection by Attributes
3.5 JEIDA standard
4
JEIDA-53 — Test Method for Carrier Recombination
Lifetime in Silicon Wafers by Measurement of
Photoconductivity Decay by Microwave Reflectance
NOTE 2: As listed or revised, all documents shall be the
latest publications of adopted standards.
4 Terminology
4.1 dopant — A chemical element , usually from the
third or fifth columns of the periodic table, incorporated
in trace amounts in a semiconductor crystal to establish
its conductivity type and resistivity. Common doping
elements are boron and phosphorous.
4.2 lot — For the purposes of this document, (a) all of
the wafers of nominally identical size and
characteristics contained in a single shipment, or (b)
subdivisions of large shipments consisting of wafers as
listed above which have been identified by the supplier
as constituting a lot.
4.3 monocrystalline — (synonym: single crystal) A
body of crystalline material that contains no large-angle
boundaries or twin boundaries.
4.4 multicrystalline — A body of crystalline material
that contains large-angle boundaries or twin boundaries.
Most crystals of this body have dimensions in the
millimeter up to centimeter range.
5 Ordering Information
5.1 Purchase orders for silicon wa fers furnished to this
specification shall include the following items:
5.1.1 Nominal dimensions,
5.1.2 Either monocrystalline or mult icrystalline,
5.1.3 Crystal growth method,
5.1.4 Surface orientation, crystal pla nes for
monocrystalline wafers
5.1.5 Conductivity type and dopant,
NOTE 3: The dopant is difficult to ascertain in the finished
wafers. Verification test procedures or certification (see
Section 9) shall be agreed upon between the supplier and the
purchaser.
5.1.6 Resistivity or resistivity range,
3 American Society for Quality Control, 611 East Wisconsin Avenue,
Milwaukee, WI 53202
4 Japan Electronic Industry Development Association, 3-5-8
Shibakoen, Minato-ku, Tokyo 105, Japan
SEMI M6-1000 © SEMI 1981, 20003
5.1.7 Lot acceptance procedures (see Section 6.4),
5.1.8 Certification (if required) (see Section 8),
5.1.9 Packing and marking (see Section 9),
5.1.10 Selection of test method to be used in
evaluating those items for which alternate tests exist
(see Section 7), and
5.1.11 Carbon and oxygen content.
5.2 Optional criteria. The followin g items may be
specified optionally in addition to those listed above:
NOTE 4: Items in Paragraph 5.2 are less commonly specified
than the others, but are included for completeness as
parameters for which methods of evaluation have been
developed.
5.2.1 Impurities other than common doping elements,
5.2.2 Diffusion length, and
5.2.3 Minority carrier lifetime.
NOTE 5: Up to now diffusion length and minority carrier
lifetime cannot be measured with sufficient inter-laboratory
accuracy. Subsequent recommendations, following lifetime
round robin experiments, will be available in the future and
will be presented in an addendum to this standard.
Even in the case of comparable and reproducible lifetime and
diffusion length measurements, the measured characteristics
must be regarded as an indication for solar cell efficiency.
There is no general relation between initial minority carrier
lifetime and solar cell efficiency as other parameters such as
carbon or oxygen content will also influence the wafer in the
solar cell process. However, in practical cases a dependence
between minority carrier lifetime and solar cell efficiency can
be found for a fixed solar cell process and a certain silicon
wafer material. If one of them is changed the relation between
them is suspect to change too.
6 Requirements
6.1 Dimensions and Permissible Variations
6.1.1 Wafer Thickness and Variation
6.1.1.1 Wafer thickness is typically 330 micrometer in
1999. In the future wafers should be specified in 50
micrometer intervals in the range between 150 and 400
micrometers.
6.1.1.2 The variation of wafer thickne ss in a lot as
measured according to 7.2 at the center point of each
wafer will be less than 15% of the specified wafer
thickness.
6.1.2 Rectangular Mainly Square Wafer Dimensions
— Depending upon the wafer type, one of the sections
6.1.2.1, 6.1.2.2 or 6.1.2.3 applies.
6.1.2.1 Square Crystalline Silicon Wafer Dimensions
6.1.2.1.1 Physical dimensions — See Figure 1, Table
2
Rectangular cells are permitted as long as the measures
of A and B are according to the nominal size measures
in Table 2.
Example: A = 100 mm, B = 150 mm.
Dimension D (identical for all sizes) min = 0.5 mm,
max = 2.0 mm. By bilateral agreement, one corner can
be of different angle and size to indicate the orientation
of the wafer.
Squareness: The wafer will fit inside a square of the
maximum dimension A and contain a square of the
minimum dimension A.
6.1.2.1.2 TTV: 50 micrometer.
6.1.2.2 Circular Monocrystalline Photovoltaic Solar
Cell Silicon Wafers
6.1.2.2.1 Diameters (mm): 100, 125, 150, 175, 200:
Variation in diameter: ± 1 mm all sizes
6.1.2.2.2 TTV: 30 micrometer.
6.1.2.2.3 Warp: 75 micrometer.
6.1.2.3 Pseudo-Square Monocrystalline Photovoltaic
Solar Cell Silicon Wafers
6.1.2.3.1 Physical dimensions: See Figure 2, Table 3
6.1.2.3.2 TTV: 30 micrometer.
6.1.2.3.3 Warp: 75 micrometer.
6.2 Materials and Manufacture
6.2.1 The material shall consist of wafers conforming
to the structural class specified in the purchase order or
contract.
6.3 Physical Parameters
6.3.1 The material shall conform to the
crystallographic orientation details as specified in the
purchase order or contract.
6.3.2 The material shall conform to the details
specified in the purchase order or contract, as follows:
6.3.2.1 Conductivity type and dopant (see Note 3),
6.3.2.2 Resistivity,
6.3.2.3 Amounts of impurities other th an common
dopants (such as phosphorous, boron), especially
oxygen and carbon content (optional),
6.3.2.4 Diffusion length (optional), and
6.3.2.5 Minority-carrier lifetime (optional).