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SEMI M36-0699 © SE MI 1999 2 Figure 1 Countin g position s for a 50 mm diameter wafer Figure 2 Countin g position s for a 76 mm diameter wafer

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SEMI M36-0699 © SEMI 19991
SEMI M36-0699
TEST METHOD FOR MEASURING ETCH PIT DENSITY (EPD) IN LOW
DISLOCATION DENSITY GALLIUM ARSENIDE WAFERS
This test method was technically approved by the Global Compound Semiconductor Committee and is the
direct responsibility of the Japanese Compound Semiconductor Materials Committee. Current edition
approved by the Japanese Regional Standards Committee on March 17, 1999. Initially available at
www.semi.org April 1999; to be published June 1999.
1 Purpose
1.1 This document provides a method to measure etch
pit density (EPD) in low dislocation density GaAs
wafers.
2 Scope
2.1 This test method describes a procedure to measure
EPD of 50 mm and 76 mm diameter round GaAs
wafers with an EPD of less than 5000/cm
2
.
2.2 This test method does not include GaAs wafer
preparation, such as wafer slicing, polishing and pit
etching. The preparation of GaAs wafer can be found in
a Referenced Document.
2.3 This standard does not purport to address all of the
safety issues. It is the responsibility of the user of this
standard to establish appropriate safety and health
practices and to determine the applicability of
regulations prior to use of the test method.
3 Referenced Document
3.1 ASTM Standard
F 140-92 — Test Method for Crystallographic
Perfection of Gallium Arsenide by Molten Potassium
Hydroxide (KOH) Etch Technique.
4 Apparatus
4.1 Microscope - Measuring field should be 1 mm
2
or
larger.
NOTE: For accurate EPD measurement, accurate area of the
measuring field should be measured by a standard scale.
5 Procedure
5.1 The counting positions for 50 mm diameter wafers
and for 76 mm diameter wafers are shown in Figure 1
and Figure 2 respectively. The counting points are
located in the center of each mesh. In the case of a 50
mm diameter wafer the mesh size is 5 mm. The total
number of counting positions is 69 and position 35 is
located at the center of the wafer. In the case of 76 mm
diameter wafer the mesh size is 10 mm, and the total
number of counting position is 37. Position 19 is
located at the center of the wafer.
5.2 Count and record the number of etch pits for
which the cores are in the measuring field. If the pits
are crowded and are difficult to count, increase the
magnification. After that count the etch pits and record
the results as well as the microscope magnification.
5.3 Repeat Section 5.3 for all other positions, 2
through 69 positions in the case of 50 mm diameter
wafers and 2 through 37 positions in the case of 76 mm
diameter wafers.
6 Calculations
6.1 The EPD in each measuring field is the number of
pits counted divided by the area.
EPD = (Number of pits) / Area
For example, if the size of measuring field is exactly 1
mm × 1 mm, the area is 0.01 cm
2
.
7 Report
7.1 There are several forms that are possible for
reporting the EPD, for example the average EPD of all
the positions or the area less than some specified value
or map of EPD for the entire wafer, etc. An appropriate
report form should be decided between the supplier and
the user.
SEMI M36-0699 © SEMI 1999 2
Figure 1
Counting positions for a 50 mm diameter wafer
Figure 2
Counting positions for a 76 mm diameter wafer
SEMI M36-0699 © SEMI 19993
NOTICE: These standards do not purport to address
safety issues, if any, associated with their use. It is the
responsibility of the user of these standards to establish
appropriate safety and health practices and determine
the applicability of regulatory limitations prior to use.
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