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SEMI E108-0301 © SEMI 2001 5 14.2 Calculation r r b b s s c I W A I A I T ×         − = whe re T c = total of organic contaminants, [ng te st mixt ure equi vale nt/c m 2 ] I s = total integral fro m gas chro mato…

SEMI E108-0301 © SEMI 2001 4

hot wafers from the furnace. Close the

minienvironment. Leave it closed for the chosen static

storage time. For analysis use only one wafer. Default

wafer is the one in the center slot.

12.3.3 For tests at elevated temperatures using a

heating chamber: open the minienvironment to be

tested and load it with a decontaminated wafer using

decontaminated handling tools (i.e., tweezers). Default

location is the center slot. Close the minienvironment.

Wrap the minienvironment with decontaminated

aluminum foil. Place the minienvironment in an inert

and clean heating chamber heated to 70°C. Leave it for

1 h and then remove it from the heating chamber and

place it at the test minienvironment. Leave it there

closed for the chosen static storage time.

NOTE 4: The purpose of the aluminum foil is to prevent

direct contact between the recirculating hot air inside the

heating chamber and the minienvironment.

12.4 Unloading Procedure — Open the minienviron-

ment and unload the wafer using decontaminated

handling tools into decontaminated petri-dishes and

wrap them into organic-free aluminum foil. Transport

the wafer immediately to the measurement equipment

and analyze the organic contamination on the wafer

according to the standard ASTM F1982.

12.5 Method Blank — Perform the test sequence using

a container made completely of glass or quartz instead

of the minienvironment. Use the same static storage

time for the method blank but perform this blank test at

room temperature. The container has to be

decontaminated with respect to organics inside by heat

treatment (refer to SEMI E46). With this blank method

the baseline contribution from the cleanroom air on the

adsorption of organic contamination on the silicon

wafer surface is determined.

12.6 Analyzing Procedure — Put the wafer or wafer

chips in the precleaned desorption unit or thermal

desorption tube and heat it for 10 min to a minimum of

275°C (but 400°C is better). The desorbed contam-

inants have to be trapped directly with the cold trap of

the thermodesorption unit (method A) or first by

adsorbent filled desorption tubes and then by the cold

trap (method B). Desorption parameters for adsorbent

filled desorption tube and cold trap may be taken from

ASTM F1982 (see also Section 12.6.1).

12.6.1 The substances desorbed shou ld be separated

by an appropriate column temperature program. A

recommended temperature program for standard

analysis uses a polydimethylsiloxane/polydiphenyl-

siloxane (95/5) coated column (30 m × 0.25 mm × 0.25

µm), heated from 50

C to 250

C at a rate of 10

C/min

followed by a temperature hold at 250

C for 10 min.

Column flow should be about 1 ml/min He at constant

flow.

12.6.2 All parameters (thermo desorp tion unit, gas

chromatograph, mass spectrometer) should be set to

yield the recommended detection limits and recovery

rates (see Calibration Procedure Section 13.2).

12.7 Materials Testing — Materials testing can be

done, using the sample preparation described in SEMI

E46, but using gas chromatography/mass spectroscopy

instead of IMS for the analysis of contaminants on the

test wafers or wafer chips.

12.8 Perform the procedure for cali bration, method

blank and test (including sample preparation) in

triplicate in order to obtain mean value and standard

deviation for the analysis.

13 Calibration and System P erformance

13.1 Calibration — The test mixtur e (2 µl liquid,

equals 1 µg of each substance; see Section 9.3) is

applied to the wafer or wafer chips as described in

SEMI E46. The so produced reference wafer or wafer

chips are handled in the same way as the samples. That

means, they are put in the precleaned desorption unit or

thermal desorption tube and heated for 10 min to

minimum 275°C (but 400°C is better) and so on as

described in Section 12.6.

13.2 System Performance — All parameters

(thermodesorption unit, gas chromatograph, mass

spectrometer) should be set to yield the specified

detection limits and recovery rates (method B) for the

components of the reference mixture. The limit of

detection (3σ) must equal or be better than 250 ng for

each of the four reference substances. The standard

deviation (inaccuracy) of the calibration must be

≤ 10%. Sample measurements are not allowed, unless

these requirements are fulfilled. For sample

measurements the same parameters as for the

calibration measurements have to be used.

14 Quantification

14.1 Integration — After the analysis measure the

surface area (A

) of the tested wafer or wafer chips.

Summing up all the peak areas from gas

chromatography/mass spectroscopy chromatogram of

the wafer or wafer chips gives the total integral (I

Determine the total integral (I

) of the blank wafer and

the total integral of the four peaks of the gas

chromatography/mass spectroscopy chromatogram of

the test mixture (I

) with the same technique.

SEMI E108-0301 © SEMI 20015

14.2 Calculation

T ×













−=

where

total of organic contaminants,

[ng test mixture equivalent/cm

]

total integral from gas

chromatography/mass spectroscopy

chromatogram of the sample

total integral from gas

chromatography/mass spectroscopy

chromatogram of the method blank

total integral from gas

chromatography/mass spectroscopy

chromatogram of the peaks of the test

mixture

total weight amount of test mixture

compounds applied to wafer [ng] { =

4000 ng}

total area (cm

) of the sample

investigated (wafer or wafer chips)

total area (cm

) of the method blank

(wafer or wafer chips)

15 Reporting Results

15.1 The essential results of carrying out the

procedure are to be summarized in a data sheet for each

experiment. The data sheet has to comprise the

following information:

General data:

• Date

• Operator

Environmental data:

• Cleanroom class of analytical environment (cf.

SEMI F21)

• Cleanroom class of test environment

Data concerning minienvironment:

• Type

• Manufacturer

• ID

• pretreatment (cleaning, etc.)

Data concerning sample:

• Manufacturer

• Type (resistivity, dopant)

• Surface condition (hydrophilic, hydrophobic)

• Decontamination procedure

Data concerning analytical equipment (gas chromato-

graphy/mass spectroscopy, thermal desorption, wafer

furnace or heating chamber):

• Manufacturer

• Type

• Limit of detection and standard deviation of

calibration procedure

Data concerning static storage test:

• Storage temperature [°C]

• Storage relaive humidity [%]

• Time of static storage test [h]

• Wafer furnace or heating chamber used (if

applicable)

Data concerning storage test result:

• Slot location of wafer

• Total of organic contaminants T

• Standard deviation of measurement (if applicable)

NOTICE: SEMI makes no warranties or

representations as to the suitability of the standards set

forth herein for any particular application. The

determination of the suitability of the standard is solely

the responsibility of the user. Users are cautioned to

refer to manufacture's instructions, product labels,

product data sheets, and other relevant literature,

respecting any materials or equipment mentioned

herein. These standards are subject to change without

notice.

By publications of this standard, Semiconductor

Equipment and Materials International (SEMI) takes no

position respecting the validity of any patent rights or

copyrights asserted in connection with any items

mentioned in this standard. Users of this standard are

expressly advised that determination of any such patent

rights or copyrights, and the risk of infringement of

such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI E110-1102

GUIDELINE FOR INDICATOR PLACEMENT ZONE AND SWITCH

PLACEMENT VOLUME OF LOAD PORT OPERATION INTERFACE FOR

300 mm LOAD PORTS

This guideline was technically approved by the Global Physical Interfaces and Carriers Committee and is the

direct responsibility of the Japanese Physical Interfaces and Carriers Committee. Current edition approved by

the Japanese Regional Standards Committee on July 19, 2002. Initially available at www.semi.org October

2002; to be published November 2002. Originally published November 2001.

1 Purpose

1.1 This guideline defines the zones and volumes in

which load port status indicators and load port

operation switches should be placed. The purpose of

this guideline is to give a similarity in the placement of

them on a 300 mm load port. This guideline only

defines the zones and volumes for them and the exact

placement of them within these zone and volumes are at

the direction of the load port suppliers.

1.2 The zones or volumes may be defined more

precisely by standardization improvement on load port

design and good unification of load port operation

among device manufactures. This guideline may be

improved to be a specification after this effort.

2 Scope

2.1 This guideline defines following recommended

specifications for 300 mm load port.

• Indicator placement zone in which load port status

indicators should be placed.

• Switch placement volume in which load port

operation switch should be placed.

2.2 This guideline covers the specifications for both

fixed buffer equipment and internal buffer equipment.

2.3 This guideline is intended to set an appropriate

level of specification that places minimal limits on

innovation while ensuring modularity and inter-

changeability at all mechanical interfaces. Only the

physical interfaces for the load port are specified; no

materials requirements, micro-contamination limits, use

of or logic associated with the defined physical features

are given in this specification.

2.4 This guideline does not purport to address safety

issues, if any, associated with its use. It is the

responsibility of the users of this guideline to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

3 Referenced Standards

3.1 SEMI Standards

SEMI E15 — Specification for Tool Load Port

SEMI E15.1 — Specification for 300 mm Tool Load

Port

SEMI E47.1 — Provisional Mechanical Specifications

for Boxes and Pods Used to Transport and Store

300mm Wafers

SEMI E57 — Mechanical Specification for Kinematic

Couplings Used to Align and Support 300 mm Wafer

Carriers

SEMI E87 — Specification for Carrier Management

(CMS)

SEMI E101 — Provisional Guide for EFEM Functional

Structure Model

NOTE 1: Unless otherwise indicated, all documents cited

shall be the latest published versions.

4 Terminology

4.1 Definitions

4.1.1 bilateral datum plane — a vertical plane that

bisects the wafers and that is perpendicular to both the

horizontal and facial datum planes (as defined in SEMI

E57).

4.1.2 facial datum plane — a vertical plane that bisects

the wafers and that is parallel to the front side of the

carrier (where wafers are removed or inserted). On tool

load ports, it is also parallel to the load face plane

specified in SEMI E15 on the side of the tool where the

carrier is loaded and unloaded (as defined in SEMI

E57).

4.1.3 fixed buffer equipment — production equipment

that has only fixed load ports and no internal buffer for

carrier storage. Substrates are loaded and unloaded

directly from the carrier at the load port for processing

(as defined in SEMI E87).