semi合集-English.pdf - 第5183页

SEMI M34-0299 © SEMI 1999 1 SEMI M34-0299 GUIDE FOR SPECIFYING SIMOX WAFERS 1. Purpose 1.1 This guide is for speci fication of SIMOX (separation by implanta tion of oxygen ) wafers with less than 0.5 µ m sili con film th…

SEMI M33-0998 © SEMI 19989

Furukawa, Advanced in X-ray Analytic Japan, 26s, 19–

24, 1995

Statistical Process Control in Microelectronics

Manufacturing — W. A. Levinson, Semiconductor

International, 1994 November, pp. 95–102

Sub-ppm Monitoring of Transition Metal

Contamination on Silicon Wafer Surfaces by VPD-

TXRF

— A. Huber, H. J. Rath, P. Eichinger, T. Bauer,

L. Kotz, and R. Staudigl, PV 88–20, The

Electrochemical Society, 1988, p. 109

Theory of Analytical Chemistry — K.S. Booksh and B.

R. Kowalski, Journal Analytical Chemistry 66A (15),

782–91, 1994

Trace-Analytical Methods for Monitoring

Contamination in Semiconductor-Grade Si

Manufacturing — L. Fabry, S. Pahlke, L. Kotz, and G.

Tölg Fresenius Journal Analytical Chemistry, 349, 260–

71, 1994

TXRF in the Daily Routine — L. Fabry, S. Pahlke, L.

Kotz, E. Schemmel, and W. Berneike, PV 93–15, The

Electrochemical Society, 1993, pp. 232–9

Ultra-Trace Analysis of Metallic Contamination on

Silicon Wafer Surfaces by Vapor Phase

Decomposition/Total Reflection X-Ray Fluorescence

(VPD/TXRF)

— C. Neumann and P. Eichinger,

Spectrochimica, Acta 46B (19), 1360–77, 1991

Verfahren Zum Schutz Von Polierten Oberflächen — I.

Lampert, Europe Patent 0 222 400 (11/13/86)

NOTICE: These standards do not purport to address

safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish

appropriate safety and health practices and determine

the applicability of regulatory limitations prior to use.

SEMI makes no warranties or representations as to the

suitability of the standards set forth herein for any

particular application. The determination of the

suitability of the standard is solely the responsibility of

the user. Users are cautioned to refer to manufacturer’s

instructions, product labels, product data sheets, and

other relevant literature respecting any materials

mentioned herein. These standards are subject to

change without notice.

The user’s attention is called to the possibility that

compliance with this standard may require use of

copyrighted material or of an invention covered by

patent rights. By publication of this standard, SEMI

takes no position respecting the validity of any patent

rights or copyrights asserted in connection with any

item mentioned in this standard. Users of this standard

are expressly advised that determination of any such

patent rights or copyrights, and the risk of infringement

of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M34-0299 © SEMI 1999 1

SEMI M34-0299

GUIDE FOR SPECIFYING SIMOX WAFERS

1. Purpose

1.1 This guide is for specification of SIMOX

(separation by implantation of oxygen) wafers with less

than 0.5 µm silicon film thickness used for

semiconductor device manufacture. These speci-

fications define the generic characteristics of SIMOX

SOI wafers; the specific values for measured

parameters will be determined by agreement between

the user and supplier for the application. By defining

parameters, inspection procedures, and acceptance

criteria, both users and suppliers may uniformly define

product characteristics and quality requirements.

2. Scope

2.1 The primary standardized properties set forth in

this specification relate to physical and electrical

characteristics of SIMOX wafers.

3. Referenced Documents

3.1 SEMI Standards

SEMI M1 — Specifications for Polished Mono-

crystalline Silicon Wafers

SEMI M22 — Specification for Dielectrically Isolated

(DI) Wafers

3.2 ASTM Documents

Practice E 122 (vol. 14.02) — Practice for Choice of

Sample Size to Estimate Average Quality of a Lot or

Process

F 154 (vol. 10.05) — Standard Practices and

Nomenclature for Indentification of Structures and

Contaminants Seen on Specular Silicon Surfaces

F 523 (vol. 10.05) — Standard Practice for Unaided

Visual Inspection of Polished Silicon Slices

3.3 Other Standards

ANSI/ASQC Z1.4 — Sampling Procedures and Tables

for Inspection by Attributes

1 American Society for Testing and Materials, 100 Barr Harbor

Drive, West Conshohoken, PA 19428-2959

2 American Society for Quality Control, 611 East Wisconsin Avenue,

Milwaukee, WI 53202

4. Terminology

4.1 Acronyms

4.1.1 BOX  Buried Oxide

4.1.2 SIMOX — Separation by Implantation of

Oxygen

4.1.3 SOS  Silicon on Sapphire

4.2 Definitions

4.2.1 buried oxide  The oxide layer that is formed

by the oxygen implant.

4.2.2 SIMOX layer  The thin silicon, layer above the

BOX. This is also referred to as top silicon or

superficial silicon.

4.2.3 substrate — The supporting material: silicon for

SIMOX.

5. Requirements

5.1 The complete specification for the starting

substrate to produce SOI wafers includes all general

requirements of SEMI M1 or SEMI M3, as appli-cable.

5.2 In addition, the parameters listed in Table 1 shall

be specified, as applicable. For example, specifi-cation

of BOX thickness is not applicable for SOS. The

specific values for parameters listed are to be specified

by agreement between user and supplier for specific

uses and specific wafer technologies.

5.3 The parameters of Table 1 apply to the final SOI

wafer. Parameters for the starting material may be

specified by agreement between user and supplier using

other standards (e.g., SEMI M1 or SEMI M3, as

appropriate). Additional parameters shall be nego-tiated

between user and supplier, as needed.

6. Sampling Plan

6.1 Unless otherwise specified, ASTM Practice E 122

shall be used. When so specified, appropriate sample

sizes shall be selected from each lot in accordance with

ANSI/ASQC Z1.4. Each quality characteristic shall be

assigned an acceptable quality level (AQL) of lot

tolerance percent defective (LTPD) value in accordance

with ANSI/ASQC Z1.4 definitions for critical, major,

and minor classi-fications. If desired and so specified in

the contract or order, each of these classifications may

alternatively be assigned cumulative AQL or LTPD

values. Inspection levels shall be agreed upon between

the user and supplier.

7. Test Methods - Dimensions

7.1 SIMOX Layer Thickness Measurements

7.1.1 Measurements Methods  Two non-contact,

non-destructive optical characterization techniques,

spectroscopic reflectometry and spectroscopic

ellipsometry, have proven useful for SIMOX layer

thickness measurements. Both techniques use reflected

light to allow deduction of the thickness and refractive

index of thin film layers. In both cases, film thickness

and index of refraction data must be " backed out" of the

measured optical data by a process of successive

approximation. In both cases, the fitting procedure is

more straightforward and more accurate the as-annealed

SIMOX wafers with abrupt silicon/oxide interfaces than

for the implanted SIMOX wafers with extended

interface zones. Silicon islands and interface

nonuniformities make these techniques problematic for

SIMOX wafers with oxygen implant doses below the

" stoichiometric dose" , roughly 1.6 × 10

/cm

for a

375 nm oxide layer.

7.1.1.1 The measurement strategy is to make a detailed

measurement with an accurate fit on at least five wafer

sites, including the center as illustrated in Figure 1. The

number of wafer sites to be monitored should be agreed

on between customer and vendor. Generally, the greater

the variability relative to the mean, the larger the

number of sites that should be monitored. In each case,

the measurement system supplies a " goodness-of-fit"

parameter which indicates a level of confidence in the

fit to the measured data.

Figure 1

Schematic of Measurement Sites, Cleavage Lines, and Edge Exclusion for 100 mm SIMOX Wafer Inspection