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SEMI M11-0704 © SEMI 1988, 2004 19 Table 3 Guide for Specification of 1.0 µm Design Rule, Tw in-Tub CMOS, Epitaxial Wafers CUSTOMER: PART NUMBER: REVISIO N: DATE: TESTING LEVEL WAFER TEST PIECE M18 ITEM # SPECIFICATION 1…

100%1 / 7923
SEMI M11-0704 © SEMI 1988, 2004 18
Diameter
1
100 125 150 200 300 Density
per m
2
Localized Light Scatterers per Wafer
Density
per cm
2
900 6 10 14 26 60 0.09
1000 7 11 16 29 67 0.10
1100 7 12 17 32 74 0.11
1200 8 13 19 35 80 0.12
1300 9 14 21 38 87 0.13
1400 9 15 22 41 94 0.14
1500 10 16 24 43 100 0.15
1600 11 17 25 46 107 0.16
1700 11 18 27 49 114 0.17
1800 12 19 29 52 121 0.18
1900 13 20 30 55 127 0.19
2000 13 22 32 58 134 0.20
2100 14 23 33 61 141 0.21
2200 15 24 35 64 147 0.22
2300 15 25 36 67 154 0.23
2400 16 26 38 69 161 0.24
2500 17 27 40 72 167 0.25
2600 17 28 41 75 174 0.26
2700 18 29 43 78 181 0.27
2800 19 30 44 81 188 0.28
2900 19 31 46 84 194 0.29
3000 20 32 48 87 201 0.30
3100 21 33 49 90 208 0.31
3200 21 34 51 93 214 0.32
3300 22 35 52 96 221 0.33
3400 23 37 54 98 228 0.34
3500 23 38 55 101 234 0.35
3600 24 39 57 104 241 0.36
3700 25 40 59 107 248 0.37
3800 25 41 60 110 254 0.38
3900 26 42 62 113 261 0.39
4000 27 43 63 116 268 0.40
4100 27 44 65 119 275 0.41
4200 28 45 67 122 281 0.42
4300 29 46 68 124 288 0.43
4400 29 47 70 127 295 0.44
4500 30 48 71 130 301 0.45
4600 31 49 73 133 308 0.46
4700 31 51 74 136 315 0.47
4800 32 52 76 139 321 0.48
4900 33 53 78 142 328 0.49
5000 33 54 79 145 335 0.50
SEMI M11-0704 © SEMI 1988, 2004 19
Table 3 Guide for Specification of 1.0 µm Design Rule, Twin-Tub CMOS, Epitaxial Wafers
CUSTOMER: PART NUMBER: REVISION: DATE:
TESTING LEVEL
WAFER TEST PIECE
M18 ITEM # SPECIFICATION
100% SAMPLE 100% SAMPLE
11. GENERAL EPITAXIAL WAFER AND LAYER CHARACTERISTICS
11.1 Conductivity Type/
Structure
p/p+
11.2 Primary Dopant Boron
11.3 Silicon Source Gas Fixed
11.4 Reactor Type Fixed
Carrier Density (Center) 2.00 ± 1.0 × 10
15
Units carriers per cm
3
11.5
Test Method Mercury Probe SEMI MF1392
11.6 Carrier Density Variation 10% max per SEMI M11
11.7 Thickness (Center) Target ± 10%
11.8 Thickness Variation 10% per SEMI M11
11.11 Phantom Layer none
12. MECHANICAL CHARACTERISTICS: POST EPI
12.5 Flatness/Site
95% of the 18 mm × 18 mm sites " 0.5 µm (SFQD)
includes partial sites
13. FRONT SURFACE CHARACTERISTICS
13.1 Stacking Faults 1 per cm
2
maximum
13.2 Slip/Dislocations none per SEMI MF1726
13.14 Localized Light Scatterers
2000 per m
2
max. ! 0.5 µm LSE, based on calibration
of surface scanning inspection systems with latex
spheres, 90% capture rate
13.5 Scratches none per SEMI MF523, Section 12.2
13.6 Dimples none per SEMI MF523, Section 12.3
13.7 Orange Peel none per SEMI MF523, Section 12.3
13.8 Cracks/Fractures none per SEMI MF523, Section 12.3
13.9 Crow’s Feet none per SEMI MF523, Section 12.3
13.10 Edge Chips none per SEMI MF 523, Section 12.3
13.12 Haze none per SEMI MF523, Section 12.2
12.13 Foreign Matter none per SEMI MF523, Section 12.3
13.15 Nominal Edge Exclusion 4 mm
Surface Metals
" 1 × 10
12
per cm
2
for Zn, Al, Ni " 2 × 10
11
per cm
2
for
each element: Na, Cr, K, Fe, Cu
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 12.4
15. OTHER CHARACTERISTICS - POLISHED WAFER: EPITAXIAL SUBSTRATE — MEETS SEMI M1
15.1 Resistivity 0.005–0.020 #·cm
15.2 Back Seal polysilicon [ ], silicon oxide [ ], silicon nitride [ ],
combination and thickness as required, none [ ]
15.3 Nominal Diameter 125 mm [ ], 150 mm [ ], 200 mm [ ], 300 mm [ ]
SEMI M11-0704 © SEMI 1988, 2004 20
Table 4 Guide for the Specification of 0.35 µm Design Rule, Twin-Tub CMOS, Epitaxial Wafers
CUSTOMER: PART NUMBER: REVISION: DATE:
TESTING LEVEL
WAFER TEST PIECE
M18 ITEM # SPECIFICATION
100% SAMPLE 100% SAMPLE
11. GENERAL EPITAXIAL WAFER AND LAYER CHARACTERISTICS
11.1 Conductivity Type/
Structure
p/p+
11.2 Primary Dopant Boron
11.3 Silicon Source Gas Fixed
11.4 Reactor Type Fixed
Net Carrier Density
(Center)
2.00 ± 0.5 × 10
15
Units carriers per cm
3
11.5
Test Method Mercury Probe SEMI MF1392 or SEMI MF1393
11.6 Net Carrier
DensityVariation
10% max per SEMI M11
11.7 Thickness (Center)
Target ± 5% (1σ)
11.8 Thickness Variation 10% per SEMI M11
11.11 Phantom Layer none
12. MECHANICAL CHARACTERISTICS: POST EPI
12.5 Flatness/Site
95% of the 22 mm × 22 mm " 0.23 um (SFQD)
includes partial sites
13. FRONT SURFACE CHARACTERISTICS
13.1 Stacking Faults 0.1 per cm
2
maximum
13.2 Slip/Dislocations none per SEMI MF1726
13.5 Scratches none per SEMI MF523, Section 12.2
13.6 Dimples none per SEMI MF523, Section 12.3
13.7 Orange Peel none per SEMI MF523, Section 12.3
13.8 Cracks/Fractures none per SEMI MF523, Section 12.3
13.9 Crow’s Feet none per SEMI MF523, Section 12.3
13.10 Edge Chips none per SEMI MF523, Section 12.3
13.12 Haze none per SEMI MF523, Section 12.2
13.13 Foreign Matter none per SEMI MF523, Section 12.3
TBD Localized Light Scatterers
2000 per m
2
max. ! 0.2 µm size, based on calibration
of surface scanning inspection systems with latex
spheres, 90% capture rate
13.15 Nominal Edge Exclusion 4 mm for all front surface characteristics except
cracks/fractures, edge chips, crow’s feet, and foreign
matter
7.1 Surface Metals " 1 × 10
11
atoms per cm
2
for each element:
Na, Al, Cr, K, Fe, Ni, Cu, Zn
14. BACK SURFACE CHARACTERISTICS
14.1 Contamination none per SEMI MF523, Section 13.4
TBD Back Seal user specified
15. OTHER CHARACTERISTICS: POLISHED WAFER-EPITAXIAL SUBSTRATE — MUST MEET SEMI M1 EXCEPT
AS NOTED
2.1 Resistivity 0.005–0.010 #·cm
TBD Bulk Micro Defects user specified