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SEMI M1-0305 © SEMI 1978, 2005 2 R2-4 Electrical Character istics .............................................................................................. ................................ 45 R2-5 C hemical Characte…

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SEMI M1-0305 © SEMI 1978, 2005 1
SEMI M1-0305
SPECIFICATIONS FOR POLISHED MONOCRYSTALLINE SILICON
WAFERS
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the North American Silicon Wafer Committee. Current edition approved by the North
American Regional Standards Committee on November 4, 2005. Initially available at www.semi.org
February 2005; to be published March 2005. Originally published in 1978; previously published July 2004.
NOTICE: This standard was completely rewritten in 2005.
Table of Contents
1 Purpose .....................................................................................................................................................................3
2 Scope ........................................................................................................................................................................3
3 Referenced Standards ...............................................................................................................................................4
4 Terminology .............................................................................................................................................................8
5 Ordering Information................................................................................................................................................8
6 Requirements ............................................................................................................................................................9
6.1 General Characteristics ......................................................................................................................................9
6.2 Electrical Characteristics .................................................................................................................................20
6.3 Chemical Characteristics .................................................................................................................................20
6.4 Structural Characteristics.................................................................................................................................20
6.5 Wafer Preparation Characteristics ...................................................................................................................20
6.5.1 Wafer ID Marking ......................................................................................................................................20
6.5.2 Other...........................................................................................................................................................21
6.6 Dimensional Characteristics ............................................................................................................................22
6.6.1 Dimensions and Fiducials...........................................................................................................................22
6.6.2 Edge Profile................................................................................................................................................22
6.6.3 Shape ..........................................................................................................................................................31
6.6.4 Standard Wafer Categories.........................................................................................................................31
6.6.5 Flatness.......................................................................................................................................................31
6.6.6 Nanotopography .........................................................................................................................................31
6.7 Front Surface Chemistry ..................................................................................................................................31
6.8 Front and Back Surface Inspection Characteristics..........................................................................................31
7 Basic Specification Requirements ..........................................................................................................................33
8 Sampling.................................................................................................................................................................35
9 Test Methods ..........................................................................................................................................................35
10 Certification ............................................................................................................................................................35
11 Product Labeling.....................................................................................................................................................35
12 Packing and Shipping Container Labeling..............................................................................................................36
Appendix 1 Flatness Decision Tree............................................................................................................................37
A1-1 Scope ............................................................................................................................................................37
A1-2 Use of the Flatness Decision Tree ................................................................................................................37
A1-3 Future Developments....................................................................................................................................39
Appendix 2 Shape Decision Tree ...............................................................................................................................40
A2-1 Scope ............................................................................................................................................................40
A2-2 Use of the Shape Decision Tree....................................................................................................................40
Related Information 1 Surface Metal Contamination.............................................................................
....................43
R1-1 Scope.............................................................................................................................................................43
R1-2 Suggested Allowable Surface Metal Contamination Levels for 1 m Geometries.......................................43
R1-3 Test Methods.................................................................................................................................................43
Related Information 2 Test Methods ..........................................................................................................................44
R2-1 Scope.............................................................................................................................................................44
R2-2 Referenced Standards....................................................................................................................................44
R2-3 General Characteristics .................................................................................................................................45
SEMI M1-0305 © SEMI 1978, 2005 2
R2-4 Electrical Characteristics ..............................................................................................................................45
R2-5 Chemical Characteristics ..............................................................................................................................46
R2-6 Structural Characteristics..............................................................................................................................46
R2-7 Dimensional Characteristics .........................................................................................................................46
R2-8 Front Surface Chemistry ...............................................................................................................................48
R2-9 Surface Inspection Characteristics ................................................................................................................48
List of Tables
Table 1 Silicon Wafer Specification Format for Order Entry, Parts 1 and 2 ..............................................................10
Table 2 Energy Ranges for Ion Implant Modeling .....................................................................................................20
Table 3 Wafer Edge Profile Template Coordinates....................................................................................................24
Table 4 Dimensional Characteristics of 2 in. and 3 in. Polished Monocrystalline Silicon Wafers.............................25
Table 5 Dimensional Characteristics of 100 mm and 125 mm Polished Monocrystalline Silicon Wafers with
Secondary Flat......................................................................................................................................................26
Table 6 Dimensional Characteristics of 150 mm Polished Monocrystalline Silicon Wafers with Secondary
Flat........................................................................................................................................................................27
Table 7 Dimensional Characteristics of 100 mm and 125 mm Polished Monocrystalline Silicon Wafers without
Secondary Flat......................................................................................................................................................28
Table 8 Dimensional Characteristics of 150 mm and 200 mm Polished Monocrystalline Silicon Wafers without
Secondary Flat......................................................................................................................................................29
Table 9 Dimensional Characteristics and Wafer ID Marking Requirements for Notched 200 mm and 300 mm
Polished Monocrystalline Silicon Wafers ............................................................................................................30
Table 10 Polished Wafer Defect Limits .....................................................................................................................32
Table 11 Basic Specification for 300 mm Polished Prime Silicon Wafers for the 130-nm Technology Node ..........33
Table A2-1 Variables in Shape Quantities..................................................................................................................42
Table A2-2 Shape Code Summary .............................................................................................................................42
Table R1-1 Suggested Polished Wafer Surface Metal Contamination Limits Appropriate to Circuits and Devices
with a Minimum Linewidth in the Range 0.8 µm to 1.2 µm................................................................................43
List of Figures
Figure 1 Fixed Quality Area.......................................................................................................................................18
Figure 2 Orthogonal Misorientation of {111} Wafer .................................................................................................19
Figure 3 Optional A/N Code Field Location on Back Surface of Notched 300 mm Diameter Wafer
(Category 1.15) ....................................................................................................................................................21
Figure 4 Secondary Flat Locations .............................................................................................................................22
Figure 5 Notch Dimensions........................................................................................................................................23
Figure 6 SEMI Edge Profile Template .......................................................................................................................23
Figure 7 Examples of Acceptable and Unacceptable Wafer Edge Profiles ................................................................24
Figure A1-1 Flatness Decision Tree ...........................................................................................................................38
Figure A1-2 Scanner Site and Subsite Flatness Elements ..........................................................................................39
Figure A1-3 Subsite Center near Boundaries of Site and FQA ..................................................................................39
Figure A2-1 Four Branches of the Shape Decision Tree............................................................................................41
SEMI M1-0305 © SEMI 1978, 2005 3
1 Purpose
1.1 Monocrystalline (single crystal) silicon wafers are utilized for essentially all integrated circuits and many other
semiconductor devices. To permit common processing equipment to be used in multiple device fabrication lines, it
is essential for the wafer dimensions to be standardized.
1.2 In addition, as technology advances to smaller and smaller dimensions for the elements of high density
integrated circuits, it has become of interest to standardize additional properties of the wafers.
1.3 This specification provides the essential dimensional and certain other common characteristics of silicon wafers,
including polished wafers as well as substrates for epitaxial and certain other kinds of silicon wafers.
2 Scope
2.1 These specifications cover ordering information and certain requirements for high-purity, monocrystalline
polished silicon wafers used in semiconductor device and integrated circuit manufacturing or as substrates (or
starting wafers) for other kinds of wafers, including epitaxial, annealed, and SOI wafers.
2.2 Dimensional requirements are provided for the following categories of polished wafers:
Category 1.1 2 in. polished monocrystalline silicon wafers with secondary flat
Category 1.2 3 in. polished monocrystalline silicon wafers with secondary flat
Category 1.5 100 mm polished monocrystalline silicon wafers, 525 m thick, with secondary flat
Category 1.6 100 mm polished monocrystalline silicon wafers, 625 m thick, with secondary flat
Category 1.7 125 mm polished monocrystalline silicon wafers with secondary flat
Category 1.8.1 150 mm polished monocrystalline silicon wafers with secondary flat and T/3 edge profile
template
Category 1.8.2 150 mm polished monocrystalline silicon wafers with secondary flat and T/4 edge profile
template
Category 1.9.1 200 mm notched polished monocrystalline silicon wafers with T/3 edge profile template
Category 1.9.2 200 mm notched polished monocrystalline silicon wafers with T/4 edge profile template
Category 1.10.1 200 mm flatted polished monocrystalline silicon wafers with T/3 edge profile template
without secondary flat
Category 1.10.2 200 mm flatted polished monocrystalline silicon wafers with T/4 edge profile template
without secondary flat
Category 1.11 100 mm flatted polished monocrystalline silicon wafers without secondary flat
Category 1.12 125 mm flatted polished monocrystalline silicon wafers without secondary flat
Category 1.13.1 150 mm flatted polished monocrystalline silicon wafers with T/3 edge profile template
without secondary flat
Category 1.13.2 150 mm flatted polished monocrystalline silicon wafers with T/4 edge profile template
without secondary flat
Category 1.15 300 mm notched polished monocrystalline silicon wafers
2.2.1 Values given for thickness, TTV, bow, and warp apply only to wafers prior to application of back surface
films, extrinsic gettering treatments, or other thermal treatments.
2.2.2 The dimensional characteristics of Category 1.10.1, 1.10.2, 1.11, 1.12, 1.13.1, and 1.13.2 wafers specified in
this document are identical with those specified in JEITA EM-3602, and the dimensional characteristics of Category
1.15 wafers are essentially equivalent with those specified in JEITA EM-3602.