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SEMI M49-0704 © SEMI 2001, 2004 3 50441-4 — De terminati on of the geomet ric dimensions of semicondu ctor slices; di ameter and flat depth of slices 50441-5 — De terminati on of the geomet ric dimensions of semicond uct…

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SEMI M49-0704 © SEMI 2001, 2004 2
SEMI M11 — Specifications for Silicon Epitaxial
Wafers for Integrated Circuit (IC) Applications
SEMI M12 — Specification for Serial Alphanumeric
Marking of the Front Surface of Wafers
SEMI M13 — Specification for Alphanumeric Marking
of Silicon Wafers
SEMI M24 — Specification for Polished
Monocrystalline Silicon Premium Wafers
SEMI M27 — Practice for Determining the Precision
Over Tolerance (P/T) Ratio of Test Equipment
SEMI M38 — Specification for Polished Reclaimed
Silicon Wafers
SEMI M43 — Guide for Reporting Wafer
Nanotopography
SEMI MF42 — Standard Test Methods for
Conductivity Type of Extrinsic Semiconducting
Materials
SEMI MF84 — Standard Test Method for Measuring
Resistivity of Silicon Wafers with an In-Line Four-
Point Probe
SEMI MF534 — Standard Test Method for Bow of
Silicon Wafers
SEMI MF657 — Standard Test Method for Measuring
Warp and Total Thickness Variation on Silicon Wafers
by Non-contact Scanning
SEMI MF671 — Standard Test Method for Measuring
Flat Length on Wafers of Silicon and Other Electronic
Materials
SEMI MF673 — Standard Test Methods for Measuring
Resistivity of Semiconductor Slices or Sheet Resistance
of Semiconductor Films with a Non-contact Eddy-
Current Gage
SEMI MF928 — Standard Test Methods for Edge
Contour of Circular Semiconductor Wafers and Rigid
Disk Substrates
SEMI MF1152 — Standard Test Method for
Dimensions of Notches on Silicon Wafers
SEMI MF1390 — Standard Test Method for Measuring
Warp on Silicon Wafers by Automated Non-contact
Scanning
SEMI MF1451 — Standard Test Method for Measuring
Sori on Silicon Wafers by Automated Non-contact
Scanning
SEMI MF1530 — Standard Test Method for Measuring
Flatness, Thickness, and Thickness Variation on Silicon
Wafers by Automated Non-contact Scanning
SEMI MF2074 — Standard Guide for Measuring
Diameter of Silicon and Other Semiconductor Wafers
SEMI T7 — Specification for Back Surface Marking of
Double-Side Polished Wafers with a Two-Dimensional
Matrix Code Symbol
4.2 ISO Standards
1
ISO/IEC 8859 — Information technology – 8-bit
single-byte coded graphic character sets
ISO 8879 — Information Processing – Text and office
systems – Standard Generalized Markup Language
(SGML)
ISO 9000 — Quality management systems –
Fundamentals and vocabulary
ISO 9001 — Quality management systems –
Requirements
ISO/IEC 10646-1 — Information technology –
Universal multiple-octet character set (UCS) – Part 1:
Architecture and basic multilingual plane
ISO/IEC 10918 — Information technology – Digital
compression and coding of continuous-tone still images
ISO 14644-1 — Cleanroom and associated controlled
environments – Part 1: Classification of air cleanliness
4.3 JEITA Standards
2
JEIDA 43 — Terminology of silicon wafer flatness
4.4 DIN Standards
3
50431 — Measurement of the electrical resistivity of
silicon or germanium single crystals by means of the
four-point-probe direct current method with collinear
probe array
50432 — Determination of the conductivity type of
silicon or germanium by means of rectification test or
hot-probe
50441-1 — Determination of the geometric dimensions
of semiconductor slices; measurement of thickness
50441-2 — Determination of the geometric dimensions
of semiconductor slices; testing of edge rounding
1 International Organization for Standardization, ISO Central
Secretariat, 1, rue de Varembé, Case postale 56, CH-1211 Geneva 20,
Switzerland. Telephone: 41.22.749.01.11; Fax: 41.22.733.34.30
Website: www.iso.ch
2 Japanese Electronic and Information Technology Industries
Association, Tokyo Chamber of Commerce and Industry Bldg. 2-2,
Marunouchi 3-chome, Chiyoda-ku, Tokyo 100-0005, Japan. Website:
www.jeita.or.jp
3 Available from Deutches Institut für Normung e.V., Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-10787 Berlin, Germany. Website:
www.din.de
SEMI M49-0704 © SEMI 2001, 2004
3
50441-4 — Determination of the geometric dimensions
of semiconductor slices; diameter and flat depth of
slices
50441-5 — Determination of the geometric dimensions
of semiconductor wafers; terms of shape and flatness
deviation
50445 — Contactless determination of the electrical
resistivity of semiconductor wafers with the eddy
current method
NOTE 1: Unless otherwise indicated, all documents cited
shall be the latest published versions.
4.5 IEEE Standards
4
IEEE 754 — IEEE Standard for Binary Floating-Point
Arithmetic
IEEE 802 — IEEE Standard for Local and Metropolitan
Networks: Overview and Architecture
IEEE 854 — IEEE Standard Radix-Independent
Floating-Point Arithmetic
4.6 Other Standards
FED-STD 209E —Airborne Particulate Cleanliness
Classes in Clean Rooms and Clean Zones
5
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
5 Terminology
5.1 Abbreviations and Acronyms
5.1.1 ARAMS — Automated Reliability, Availability,
and Maintainability Standard
5.1.2 ASCII — American Standard Code for
Information Interchange
5.1.3 FTP — File Transfer Protocol
5.1.4 GEM — Generic Equipment Model
5.1.5 HSMS — High Speed SECS Messaging Service
5.1.6 IEEE — The Institute of Electrical and
Electronics Engineers, Inc.
5.1.7 JPEG — Joint Photographics Expert Group
5.1.8 SECS — SEMI Equipment Communications
Standard
5.1.9 XML — Extensible Markup Language
5.2 Definitions
4 Institute of Electrical and Electronics Engineers, IEEE Operations
Center, 445 Hoes Lane, P.O. Box 1331, Piscataway, New Jersey
08855-1331, USA. Telephone: 732.981.0060; Fax: 732.981.1721
6 General Services Administration, Federal Supply Service, FSS
Acquisition Management Center, Environmental Programs and
Engineering Policy Division (FCOE), Washington, D.C. 20406
5.2.1 bias — the difference between the average of
measurements made on the same object and its true
value. Sufficient measurements are needed to mitigate
the effects of variability. (SEMI E89)
5.2.2 calibration — calibration is a measurement
process that assigns value to the property of an artifact
or to the response of an instrument relative to reference
standards or to a designated measurement process.
NOTE 2: The purpose of calibration is to eliminate or reduce
bias in the user’s measurement system relative to the
reference base. The calibration process compares an unknown
or test item or instrument with reference standards according
to a specific algorithm, often in the form of a specific
calibration curve. (SEMI E89)
5.2.3 compatibility — the capability of measurement
equipment to emulate the measurement process of other
tools. Downward compatibility refers to former
generation(s) of the same or similar type of equipment
of an equipment supplier.
NOTE 3: Compatibility can be provided by a measurement
mode in which filtering, spatial resolution, etc. of another,
older, tool is imitated.
5.2.4 correlation — the relation of measurement
results obtained by repeated measurements with the
same set of test specimen(s) and any two measurement
tools expressed in terms of a regression curve.
5.2.5 level 1 variability (σ
1
) — the variation (standard
deviation) of measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool under nominally identical
conditions without replacing the test specimen between
subsequent measurement runs. σ
tests are performed
with a single calibration in the shortest possible time
interval.
5.2.6 level 2 variability (σ
2
) — the variation (standard
deviation) of measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool with replacing the test
specimen between subsequent measurement runs but
otherwise under nominally identical conditions. σ
2
tests
are performed with a single calibration in the shortest
possible time interval.
5.2.7 level 3 variability (σ
3
) — the variation (standard
deviation) of measurement results obtained by repeated
measurements with the same test specimen(s) and the
same measurement tool with replacing the test
specimen between subsequent measurement runs but
otherwise under nominally identical conditions. σ
3
tests
are performed over a time period greater than σ
2
tests
without operator induced adjustment.
5.2.8 matching tolerance (∆
m
) — the difference in bias
for any two measurement tools of the same kind.
SEMI M49-0704 © SEMI 2001, 2004 4
Otherwise matching tolerance tests are performed under
the conditions of σ
3
tests.
NOTE 4: In the absence of certified or standard reference
materials matching may be tested by using appropriate wafers
complying with 130 nm technology node specifications. It is
recommended to test for matching with a set of samples
covering the parameter range of interest.
5.2.9 precision over tolerance (P/T) ratio — the ratio
of the precision of measurement equipment and a
product’s tolerance. (SEMI M27)
5.2.10 sorting — real and virtual separation of test
specimens in different categories specified by one or
multiple parameters.
5.2.11 tolerance — the absolute magnitude of the
range of the product specification. (SEMI M27)
6 Specification for Geometry Measurement
Equipment for Silicon Wafers
6.1 The specification is structured in three sections
(Tables 1–3):
• Generic Equipment Characteristics (Table 1)
• Materials to be measured (Table 2)
• Metrology Specific Equipment Characteristics
(Table 3)
6.2 Tables 1–3 contain the specifications, referenced
documents, test methods, and comments. Additional
explanations and discussions are provided in this
section.
6.3 Generic Equipment Characteristics (Table 1)
6.3.1 The section “Generic Equipment Characteristics”
consists of five subsections:
• Wafer handling
• Reliability
• Procedural
• Documentation
• Computer/User Interface/Connectivity
6.3.2 Subsections covering “Facilities Requirements”
and “Safety/Legal/Regulatory” are not included in the
present document as these issues are highly user
specific and dependent on national regulations.
6.4 Materials to be measured (Table 2)
6.4.1 Table 2 specifies the parameters of Si wafers that
the measurement equipment must be capable to handle
and to measure.
6.5 Metrology Specific Equipment Characteristics
(Table 3)
6.5.1 This section specifies the dimensional parameters
of Si wafers to be measured and to be reported by
equipment for measuring the geometry and flatness of
wafers as well as the required spatial resolution,
precision and accuracy of the measurement equipment.
6.5.2 The ability of a metrology tool to properly
measure surface features of different spatial
wavelengths is affected by the spatial bandwidth of the
tool's response function. Spatial bandwidth can be
defined in many ways and is influenced by many
factors beyond the scope of this document. Some of
these need to be standardized.
6.5.3 Spatial resolution is defined by the high spatial
frequency limit of the bandwidth of the tool's response
function.
6.5.4 Low and high cut-off frequency f
min
and f
max
define the bandwidth of the response function of
measurement equipment. The cut-off frequencies
correspond to an attenuation of 0.5 for the amplitude of
a sinusoidal surface feature with the exception of a low
pass filter (f
min
= 0) for which the attenuation remains 1
at f
min
.
6.5.5 The rate of change of the attenuation approaching
the cut-off frequencies has to be larger than the rate of a
Gaussian filter with the corresponding cut-off
frequency.
6.5.6 The present document recommends f
max
and f
min
that must be measured by the instrument.
6.5.7 Any variations in filtering procedures applied
near the FQA boundary must be described by the
supplier of the equipment.
6.5.8 The bandwidth as specified in Table 3 is a
nominal value.
6.5.9 In the present document a hierarchy of variability
levels is used to describe the performance of
measurement equipment which is calibrated and
adjusted/aligned according to the supplier's procedures.
The various terms are defined in section 5. These
variability levels are consistent with terms defined in
SEMI E89 but not fully interchangeable. Their relation
is indicated in parentheses.
6.5.9.1 Level 1 variability: standard deviation σ
1
(SEMI E89 static repeatability)
6.5.9.2 Level 2 variability: standard deviation σ
2
(SEMI E89 dynamic repeatability)
6.5.9.3 Level 3 variability: standard deviation σ
3
(SEMI E89 reproducibility)