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SEMI M1-0305 © SEMI 1978, 2005 29 Table 8 Dimensional Characteristics of 150 mm and 200 mm Polished Monocr ystalline Silicon Wafers without Secondary Fla t #1 Previous SEMI Reference: SEMI M1.13 SEMI M1.10 Wafer Category…
SEMI M1-0305 © SEMI 1978, 2005 28
Table 7 Dimensional Characteristics of 100 mm and 125 mm Polished Monocrystalline Silicon Wafers
without Secondary Flat
#1
Previous SEMI Reference: SEMI M1.11 SEMI M1.12
Wafer Category: 1.11 1.12
Property
100 mm Wafers without secondary flat
(t=525
m)
#2
125 mm Wafers without secondary flat
(t=625
m)
#2
2-6.1 Diameter
100.00 0.20 mm. 125.00 0.20 mm
2-6.2 Primary Flat Length
32.5 2.5 mm 42.5 2.5 mm
2-6.3 Primary Flat Orientation
#3
{110} 1
2-6.5 Secondary Flat Location No secondary flat
2-6.6 Edge Profile Coordinate, C
y
(T/3 Template, see Table 3)
175 m 208 m
2-6.7 Thickness, Center Point
525 15 m. 625 15 m
2-6.8 Total Thickness Variation, Max.
10 m
2-6.9 Bow, Max.
40 m
2-6.10 Warp, Max.
40 m
#1
Note that these specifications were originated in Japan. They are equivalent to the specifications for wafers of the same nominal diameter in
JEITA EM-3602. Care should be taken in applying this configuration to specific applications (see ¶6.6.3).
#2
For referee purposes, metric (SI) units apply. To ensure that product shipped is within specification, any conversion to U.S. Customary
equivalents should be done following the maximum-minimum convention in which the minimum values are rounded-up and the maximum values
are rounded-down to ensure that the equivalent range is always inside the referee range. If U.S. Customary equivalents are used for incoming
inspection, minimum values should be rounded-down and maximum values rounded-up to avoid rejection of material that is within the
specification when measured by the referee system of units. CAUTION: The significance of the rightmost digit may vary, depending on the
quantity being measured and the precision of the test procedure. Refer to the relevant test method for precision data which can be used to
construct appropriate guard bands.
#3
For )111( wafers, the
),011( ),101(
and
)011(
planes are the equivalent, allowable (110) planes. For (100) wafers, the allowable equivalent
)110( planes are
),101(),011( ),110( and ).110(
SEMI M1-0305 © SEMI 1978, 2005 29
Table 8 Dimensional Characteristics of 150 mm and 200 mm Polished Monocrystalline Silicon Wafers
without Secondary Flat
#1
Previous SEMI Reference: SEMI M1.13 SEMI M1.10
Wafer Category: 1.13.1 1.13.2 1.10.1 1.10.2
Property
150 mm Wafers without secondary flat
(t=625
m)
#2
200 mm Wafers flatted, without
secondary flat
#2
2-6.1 Diameter
150.00 0.20 mm 200.00 0.20 mm
Primary Flat Length
47.5 2.5 mm
Not applicable 2-6.2
Flat Diameter Not applicable
195.50 0.20 mm
2-6.3 Primary Flat Orientation
#3
{110} 1
2-6.5 Secondary Flat Location No secondary flat
2-6.6 Edge Profile Coordinate,
C
y
(see Table 3)
T/3 Template
208 m
T/4 Template
156 m
T/3 Template
242 m
T/4 Template
181 m
2-6.7 Thickness, Center Point
625 15 m 675 15 m
2-6.8 Total Thickness Variation, Max.
10 m
2-6.9 Bow, Max.
60 m 65 m
2-6.10 Warp, Max.
60 m 75 m
2-5.7 Edge Surface Condition Not specified Supplier-customer agreement
#4
#1
Note that these specifications were originated in Japan. They are equivalent to the specifications for wafers of the same nominal diameter in
JEITA EM-3602. Care should be taken in applying this configuration to specific applications (see ¶6.6.3).
#2
For referee purposes, metric (SI) units apply. To ensure that product shipped is within specification, any conversion to U.S. Customary
equivalents should be done following the maximum-minimum convention in which the minimum values are rounded-up and the maximum values
are rounded-down to ensure that the equivalent range is always inside the referee range. If U.S. Customary equivalents are used for incoming
inspection, minimum values should be rounded-down and maximum values rounded-up to avoid rejection of material that is within the
specification when measured by the referee system of units. CAUTION: The significance of the rightmost digit may vary, depending on the
quantity being measured and the precision of the test procedure. Refer to the relevant test method for precision data which can be used to
construct appropriate guard bands.
#3
For )111( wafers, the
),011( ),101( and )011( planes are the equivalent, allowable (110) planes. For (100) wafers, the allowable equivalent
)110( planes are
),101(),011( ),110( and ).110(
#4
If specified as polished, this term is meant to imply a surface condition and not a particular processing technique. If desired, a quantitative
measure of surface finish may optionally be indicated by specifying the rms microroughness over a specified spatial frequency (or wavelength)
range. Because a standardized test method has not yet been developed for this metric, both values and test procedures, including sampling plan
and detrending procedures, shall be agreed upon between supplier and customer.
SEMI M1-0305 © SEMI 1978, 2005 30
Table 9 Dimensional Characteristics and Wafer ID Marking Requirements for Notched 200 mm and 300 mm
Polished Monocrystalline Silicon Wafers
#1
Previous SEMI Reference: SEMI M1.9 SEMI M1.15
Wafer Category: 1.9.1 1.9.2 1.15
Property 200 mm Wafers (Notched)
#2
300 mm Wafers
(Notched)
#2
2-6.1 Diameter
200.00 0.20 mm. 300.00 0.20 mm
2-6.2 Notch Dimensions (See Figure 5)
Depth
Angle
1.00 mm +0.25 mm 0.00 mm
90 +5 1
2-6.3 Orientation of Notch Axis
#3
<110> 1
2-6.5 Secondary Fiducial Location No secondary fiducial
2-6.6 Edge Profile Coordinate,
C
y
(see Table 3)
T/3 Template
242 m
T/4 Template
181 m
T/4 Template
194 m
2-6.7 Thickness, Center Point
725 20 m. 775 20 m
2-6.8 Total Thickness Variation, Max.
10 m 10 m
#4
2-6.9 Bow, Max.
65 m
Not specified
2-6.10 Warp, Max.
75 m 100 m
#5
2-5.1 Wafer ID Marking Supplier-customer agreement SEMI T7 mark with
optional A/N mark (See
¶6.5.1.4)
2-5.7 Edge Surface Condition
Supplier-customer agreement
#6
Polished
#6
2-9.8 Back Surface Brightness (Gloss) Not specified 0.80
#6,#7
#1
Note that these specifications were originated in the United States. Care should be taken in applying this configuration to specific applications
(see ¶6.6.3). The specification for 300 mm wafers is essentially equivalent to the specification for wafers of this diameter in JEITA EM-3602.
#2
For referee purposes, metric (SI) units apply. To ensure that product shipped is within specification, any conversion to U.S. Customary
equivalents should be done following the maximum-minimum convention in which the minimum values are rounded-up and the maximum values
are rounded-down to ensure that the equivalent range is always inside the referee range. If U.S. Customary equivalents are used for incoming
inspection, minimum values should be rounded-down and maximum values rounded-up to avoid rejection of material that is within the
specification when measured by the referee system of units. CAUTION: The significance of the rightmost digit may vary, depending on the
quantity being measured and the precision of the test procedure. Refer to the relevant test method for precision data which can be used to
construct appropriate guard bands.
#3
For 200 mm )111( wafers, the
],011[ ],101[ , and ]011[ axes are the equivalent, allowable <110> axees. For (100) wafers, the allowable
equivalent <110> axes are
],101[
],011[
],110[
and
].110[
#4
Full wafer scan as described in SEMI MF1530.
#5
Warp corrected for gravitational effects. However, warp is not an adequate wafer shape specification for all applications.
#6
If specified as polished, this term is meant to imply a surface condition and not a particular processing technique. If desired, a quantitative
measure of surface finish may optionally be indicated by specifying the rms microroughness over a specified spatial frequency (or wavelength)
range. Because a standardized test method has not yet been developed for this metric, both values and test procedures, including sampling plan
and detrending procedures, shall be agreed upon between supplier and customer.
#7
Gloss as measured in accordance with ASTM Test Method D 523 or JIS Z 8741 with visible illumination at a 60° angle of incidence referenced
to a mirror polished silicon wafer front surface. This metric may not describe the back surface finish adequately to establish detectability of small
localized light scatterers (LLSs). If it is necessary to detect LLSs smaller than 0.25 µm LSE, another quantitative measure of surface finish may
optionally be indicated by specifying the rms microroughness over a specified spatial frequency (or wavelength) range. Because a standardized
test method has not yet been developed for this metric, both values and test procedures shall be agreed upon between supplier and customer.