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SEMI M52-0703 © SEMI 2002, 2003 9 Item Recommended S pecification Comment References 5.16 ARAMS (Automated Reliability, Availability, and Maintainability Standard) required SEMI E58 Table 2 Materials to be measured Item …

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SEMI M52-0703 © SEMI 2002, 2003 8
Item Recommended Specification Comment References
5.2 Display
cleanroom compatible, class 10
(Federal Standard) or class 4 (ISO)
FED-STD 209E
ISO 14644-1
5.3 Keyboard
cleanroom compatible, class 10
(Federal Standard) or class 4 (ISO)
FED-STD 209E
ISO 14644-1
5.4 Pointing Device
cleanroom compatible, class 10
(Federal Standard) or class 4 (ISO)
FED-STD 209E
ISO 14644-1
5.5 Printer
cleanroom compatible, class 10
(Federal Standard) or class 4 (ISO)
FED-STD 209E
ISO 14644-1
5.6 Data Processing
- reprocessing of data
- parallel processing in different modes
during measurement including sorting
- multiprocessing: e.g. recipe editing,
up/downloading during measurements
different modes
refer to data
evaluation
5.7 Data Access
- access to basic measurement results:
- data available at SECS/GEM/HSMS
interface in real time
refers to all
functions as defined
in Table 3
SEMI E5
SEMI E30
SEMI E37
5.8 Data Analysis (Online/Offline )
on-line/off-line
5.9 Recipe Control
- complete recipe generation off-line
without machine specific data
(calibration curves)
- off-line recipe editing
- remote recipe control by host
computer
- recipes are compatible between
different software versions
5.10 Operating Sequence
complete remote control: recipe
download, start, stop, define data
evaluation via SECS/GEM
SEMI E5
SEMI E30
5.11 Data Interfaces
- SECS/
- GEM
- optional additionally a mass data
standard transfer protocol (e.g. FTP)
SEMI E5
SEMI E30
www.w3.org/Protocols/
rfc959
5.12 Material Tracking System Support
required, details user specific
5.13 Output File Format
standardized formats:
- ASCII or XML for measurement
results and optional for raw data
- IEEE for raw data (floating point)
- JPEG (or equivalent) for raw data
(image data)
ISO/IEC 8859,
ISO 8879
ISO/IEC 10646-1
www.w3.org
IEEE 754, IEEE 854
ISO/IEC 10918
5.14 Network Communications
Standards Support
Ethernet, Fast Ethernet IEEE 802 and
subsequent standards
5.15 SECS/GEM (SEMI Equipment
Communication Standard
II/Generic Model for
Communications and Control of
Manufacturing Equipment)
required SEMI E5
SEMI E30
SEMI M52-0703 © SEMI 2002, 2003 9
Item Recommended Specification Comment References
5.16 ARAMS (Automated Reliability,
Availability, and Maintainability
Standard)
required SEMI E58
Table 2 Materials to be measured
Item Recommended Specification Comments References
1. WAFERS
1.1 Kind of Wafers
monocrystalline, unpatterned silicon
wafers with layers as specified in
Table 2, 1.3.4
SEMI M1
(SEMI M8)
(SEMI M11)
(SEMI M24)
1.2 Wafer Characteristics - dimensional
1.2.1 Wafer Diameter
200 or 300 or 200 and 300 mm nominal SEMI M1
ASTM F 2074
DIN 50441-4
1.2.2 Wafer Thickness
700–850 µm For reclaim wafers,
performance as
outlined in Table 3
might be reduced.
200 mm: 600–850 µm
300 mm: 650–850 µm
ASTM F 1530
DIN 50441-1
1.2.3 Edge Shape
rounded SEMI M1
DIN 50441-2
ASTM F 928
1.2.4 Wafer Shape Range
200 mm wfrs: warp ≤100 µm,
300 mm wfrs: warp ≤200 µm
SEMI M1
ASTM F 1390
DIN 50441-5
1.2.5 Fiducial
flat or notch SEMI M1
ASTM F 671
ASTM F 1152
(DIN 50441-4)
1.2.6 ID Mark(s)
200 mm wfrs: user specific
300 mm wfrs: according to SEMI
standards
content, type location
of ID mark to be
specified
SEMI M12
SEMI M13
SEMI M1.15
SEMI T7
1.3 Wafer Characteristics - electrical,
optical
1.3.1 Electrical resistivity of wafers,
conductivity type
0.5 mΩ·cm – intrinsic, p-, n-type
Res: ASTM F 673
DIN 50445
ASTM F 84
DIN 50431
Type: ASTM F 42 or
DIN50432
1.3.2 Thermal donors
annealed and not annealed
1.3.3 Wafer charge
no effect with respect to measurement
SEMI M52-0703 © SEMI 2002, 2003 10
Item Recommended Specification Comments References
1.3.4 Layers (LTO, poly-Si), Epi
LTO: thickness: 150–900 nm
uniformity: ≤10%
Poly-si: thickness: ≤2 µm, uniformity:
<20 %
Epitaxial layer: customer specific
1.3.5 Wafer surface conditions
front side: polished, annealed, epitaxial
layer
backside: polished, acid and/or caustic
etched, layers according to 1.3.4
Annealing may affect
the surface roughness
of a Si wafer.
Evaluation of capture
rate with such a wafer
may not achieve the
specifications as
defined in Section 2.2
and Table 3, 1.2.1.
Table 3 Metrology Specific Equipment Characteristics
Item Recommended Specification Comments References
1. MEASUREMENT FUNCTIONS
1.1 Defect type
1.1.1 PSL sphere
required For reference SEMI M35
1.1.2 Particle
required SEMI M1
SEMI M35
1.1.3 COP
required
SEMATECH
TT 95082941A-TR
1.1.4 Mound (epi)
required ASTM F 1241
1.1.5 Mound (pw)
required
1.1.6 Pit
required
SEMI M35
SEMATECH
TT 95082941A-TR
1.1.7 Spike (epi)
required ASTM F 154
1.1.8 Stacking Fault (epi)
required ASTM F 154
1.1.9 Scratch
required
SEMI M35
SEMATECH
TT 95082941A TR
1.1.10 Slip
required ASTM F 1241
1.1.11 Dimple
required SEMI M1
1.1.12 Haze
required SEMI M1, M35
1.1.13 Slurry Ring
required
1.1.14 Stain
required ASTM F 1241