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SEMI MF1569-0705 © SEMI 2003, 2005 6 APPENDIX 1 GENERATION OF MULTIPLE SE TS OF REFERENCE MATERIALS NOTICE : The material in this appendix is an official part of SEMI MF1569. Approval was b y full letter ballot procedure…

SEMI MF1569-0705 © SEMI 2003, 2005 5

6.7 Prepare guide for generation of multiple sets of reference materials traceable to the ConRefs generated by the

ILS (see Appendix 1).

7 Keywords

7.1 certified reference material; consensus reference material; flat panel display; interlaboratory experiment;

reference material; semiconductor; silicon; sputtering target; working reference material

SEMI MF1569-0705 © SEMI 2003, 2005 6

APPENDIX 1

GENERATION OF MULTIPLE SETS OF REFERENCE MATERIALS

NOTICE: The material in this appendix is an official part of SEMI MF1569. Approval was by full letter ballot

procedures with publication authorized by the ISC Audits & Review Subcommittee on April 7, 2005.

A1.1 This guide describes a methodology for generating a single set of reference materials from a test procedure.

Replication of this set requires additional procedures for generating multiple sets of reference materials from other

materials such as the ConRefs. Therefore, another procedure is required; this procedure is of the type used by

laboratories that generate certified reference materials and is generally specific to the particular material or property.

A1.2 The guide for generation of multiple sets of reference materials should include information on the following

topics:

A1.2.1 Terminology specific to the property or material,

A1.2.2 Reagents as needed for preparation of the materials,

A1.2.3 Hierarchy of available reference materials including CRMs and ConRefs,

A1.2.4 Description of test instrumentation,

A1.2.5 Qualification of test instrumentation,

A1.2.6 Selection and qualification of materials,

A1.2.7 Preparation of materials,

A1.2.8 Procedures for assigning property values,

A1.2.9 Deliverable documentation,

A1.2.10 Application of the reference materials,

A1.2.11 Operator training for generation or use (or both) of the reference materials, and

A1.2.12 Keywords.

A1.3 Include test analyses and raw data values in related information sections, as required.

NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any

particular application. The determination of the suitability of the standard is solely the responsibility of the user.

Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant

literature, respecting any materials or equipment mentioned herein. These standards are subject to change without

notice.

By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and

the risk of infringement of such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI MF1617-0304 © SEMI 2003, 2004 1

SEMI MF1617-0304

TEST METHOD FOR MEASURING SURFACE SODIUM, ALUMINUM,

POTASSIUM, AND IRON ON SILICON AND EPI SUBSTRATES BY

SECONDARY ION MASS SPECTROMETRY

This test method was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved for publication by

the North American Regional Standards Committee on December 4, 2003. Initially available at

www.semi.org February 2004; to be published March 2004. Originally published by ASTM International as

ASTM F 1617-95. Last previous edition SEMI MF1617-98 (Reapproved 2002).

1 Purpose

1.1 Secondary ion mass spectrometry (SIMS) can

measure on polished silicon wafer product the

following:

(1) the sodium and potassium areal densities that

can affect voltage flatband shifts in integrated circuits,

and,

(2) the aluminum areal density that can affect the

thermal oxide growth rate.

(3) the iron areal density that can affect gate oxide

integrity, minority carrier lifetime, and current leakage.

1.2 The SIMS measurement facilitates the production

of silicon wafers with upper control limits on sodium,

potassium, aluminum, and iron areal densities.

1.3 This test method can be used for monitoring a

mirror-polished wafer cleaning process, for research

and development, and for materials acceptance

purposes.

1.4 This test method can provide spatial information

for these metal contaminants, including near-edge

substrate contamination levels.

1.5 This test method is especially useful for

determining the surface metal areal densities in the

native oxide or chemically grown oxide of polished

silicon substrates after cleaning.

2 Scope

2.1 This test method covers the determination of total

sodium, aluminum, potassium, and iron on the surface

of mirror-polished single crystal silicon and silicon epi

substrates using SIMS. This test method measures the

total amount of each metal, because this test method is

independent of the metal' s chemistry or electrical

activity.

2.2 This test method can be used for silicon with all

dopant species and dopant concentrations.

2.3 This test method is especially designed to be used

for surface metal contamination that is located within

approximately 5 nm of the surface of the wafer.

2.4 This test method is useful for sodium, aluminum,

potassium, and iron areal densities between 10

and

atoms/cm

. The limit of detection is determined by

either the BLANK value or by count rate limitations,

and may vary with instrumentation.

2.5 This test method is complementary to:

2.5.1 Total reflection X-ray fluorescence (TXRF), that

can detect higher atomic number Z, surface metals such

as iron, but does not have useful (<10

atoms/cm

)

detection limits for sodium, potassium, and aluminum

on silicon.

2.5.2 Vapor phase decomposition (VPD) of surface

metals followed by atomic absorption spectroscopy

(AAS) or inductively coupled plasma mass

spectrometry (ICP-MS) of the VPD residue, where the

metal detection limits are 10

to 10

atoms/cm

. There

is no spatial information available and the VPD

preconcentration of metals is dependent upon the

chemistry of each metal.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the user of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Limitations

3.1 Surface metal contamination of sodium, aluminum,

potassium or iron introduced during handling of the test

specimen or during the measurement itself introduces a

bias to the measurement. (Particulate room

contamination containing these metals is easily

distinguished from metal contamination by the shape of

the SIMS profile that should have the log of the signal

drop linearly with time. A particulate contamination

does not follow this shape under SIMS profile.)

3.1.1 The discrimination of elemental ions from

molecular ions is particularly important for the

signal that has a significant interference below about

to 10

atoms/cm

from ubiquitous C

molecular ions that may arise from clean room air or