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SEMI MF1527-1104 © SEMI 2003, 2004 10 Section 7.2 (co nversion from dopant density to resistivity) of SEMI MF723, by solving the app ropriate equation given in this section for resistivity iteratively for the net carrier…

SEMI MF1527-1104 © SEMI 2003, 2004 9

8.7 Wafer Conductivity Type and Surface Orientation

— For control of four-point probes or for calibrating

eddy current probes, conductivity type and surface

orientation do not influence the result. In this case

these parameters should be chosen so as to provide the

most uniform specimens available. For low resistivity

reference wafers, p-type (100) or (111) wafers are most

appropriate, while for high resistivity reference wafers,

n-type (neutron transmutation doped) wafers of either

orientation are preferred. For use in calibrating

mercury probes, the conductivity type of the reference

wafers must match that of the specimens to be tested.

For use in calibrating spreading resistance instruments,

the type and surface orientation of the reference wafers

must match those of the specimens to be tested.

NOTE 6: When uniformity considerations are the dominant

issue, the following should be kept in mind. At low

resistivity, wafers cut from Cz crystal are not only more

readily available but probably have better uniformity than

wafers cut from FZ crystals. Wafers cut from MCz crystals,

if available, may be an acceptable alternative to NTD wafers

for the higher resistivity ranges. In general, (100) crystals

have better radial resistivity uniformity than (111) crystals.

Also p-type crystals have generally better radial resistivity

uniformity than n-type crystals.

9 Preparation and Calibration of Resistivity

Reference Wafers

9.1 Wafer Preparation — Wafers should be sliced

from a qualified crystal section of the desired

resistivity, diameter, conductivity type, and orientation.

The thickness of the as-cut wafers should be at least

100 m larger than the desired finished thickness to

allow for removal of 25 m from each surface during

both etching and lapping. Etching immediately after

slicing in either KOH etching solution (see Section 5.4)

or etching solution (15 + 1) (see Section 5.5) is

recommended to remove damage introduced during

slicing. Subsequent lapping with 5 to 9-m aluminum

oxide abrasive is intended to provide both control of

thickness variation and a uniform matte surface.

9.1.1 The total thickness variation (TTV) of resistivity

reference wafers should be as small as possible. As a

minimum, the reference wafers should meet the TTV

requirement of ±1 % of the center-point thickness as

specified in SEMI MF84. For 625-m thick wafers,

this would require TTV  12.5 m. In most cases, it

should be possible to obtain lapped wafers with TTV 

6 m over the entire wafer and TTV  3 m (± 0.25%

of the center-point thickness) over the region of the

wafer where the resistivity uniformity is determined

(see Section 8.5.1.2). Etched or single-side polished

wafers may have somewhat larger TTV.

9.1.2 The preferred surface finish is that obtained by

lapping with 5-m alumina powder as specified in

SEMI MF84; generally similar results can be obtained

by lapping with alumina powders up to 9 m. This

surface finish was originally chosen to provide good

probe-tip and specimen-surface wear together with

sufficient smoothness to reduce probe wander.

However, resistivity reference wafers intended for

calibration of mercury probe and spreading resistance

instruments must be polished. On the other hand, if

polished wafers are used for four-point probe

measurements, difficulties may be encountered with

accumulated probe damage and the resultant contact

quality degradation or surface charge, or both.

However, use of instruments calibrated with lapped

resistivity reference wafers for measuring polished

wafers could result in errors because the electrical

thickness may be different for lapped and polished

wafers of the same mechanical thickness.

NOTE 7: An unpublished roughness-thickness correlation

study has shown that the electrical thickness of lapped wafers

with root-mean-square (rms) surface roughness < 0.58 m on

both sides does not differ from the mechanical thickness by

more than 2.5 m.

9.2 Calibration

9.2.1 Determine that the candidate resistivity reference

wafer meets the resistivity uniformity requirements

appropriate to the intended application or applications

(see Sections 8.1, 8.4, and 8.5).

9.2.2 Determine the resistivity of the candidate

reference wafer at its center in accordance with SEMI

MF84 except that (1) thickness should be measured in

accordance with Section 8.6.2, (2) each determination

should consist of m measurements, where 6  m  10,

taken with the wafer rotated about (360/m) deg between

each measurement, and (3) wafers with a surface finish

that results in stable, reproducible measurements may

be used. If the measurement is made on an etched or

polished surface, equivalence with the result that would

have been obtained using a lapped surface must be

demonstrated.

9.2.3 Calculate the average resistivity corrected to

23°C in accordance with SEMI MF84 and the sample

standard deviation of the six to ten individual resistivity

measurements (corrected to 23°C).

9.2.4 If the resistivity reference wafer is to be used for

calibrating a mercury probe system, convert the

temperature-corrected average resistivity value to net

carrier density using the computational method given in

9 Hargreaves, J. K., and Millard, D., “The Accuracy of Four-probe

Resistivity Measurements on Silicon,” Brit. J. Appl. Phys. 13, 231–

234 (1962).

SEMI MF1527-1104 © SEMI 2003, 2004 10

Section 7.2 (conversion from dopant density to

resistivity) of SEMI MF723, by solving the appropriate

equation given in this section for resistivity iteratively

for the net carrier density.

9.2.5 Provide the following information with the

reference wafer:

9.2.5.1 Wafer identification (including source crystal

and position therein, orientation, conductivity type, and

dopant impurity),

9.2.5.2 Date of calibration,

9.2.5.3 Calibrating laboratory and operator,

9.2.5.4 Identification of instrumentation used,

9.2.5.5 Nominal wafer diameter, in mm,

9.2.5.6 Average wafer thickness, in mm,

9.2.5.7 Total thickness variation over the 38-mm

diameter central circle, in m,

9.2.5.8 Method for determining thickness and

thickness variation,

9.2.5.9 Nominal measuring current, in mA,

9.2.5.10 Average center-point resistivity, corrected to

23°C, in ·cm,

9.2.5.11 Number of resistivity measurements (m) per

determination, and

9.2.5.12 Standard deviation of corrected center-point

resistivity values, in ·cm.

9.2.6 If appropriate for the application also provide any

or all of the following:

9.2.6.1 Net carrier density, in cm

3

9.2.6.2 Diameter of the area over which thickness and

radial resistivity uniformity were obtained, if different

from 38 mm,

9.2.6.3 Measures of macro-scale and micro-scale radial

sheet resistance (resistivity) uniformity, including the

method or methods by which the uniformity was

determined,

9.2.6.4 Measure of axial resistivity uniformity

estimate, including a description of the procedure by

which the estimate was obtained, and

9.2.6.5 Average voltage-current ratio, corrected to

23°C for a four-point probe with ideal (equal) 1.59-mm

probe-tip spacing.

10 Application of Resistivity Reference

Materials

10.1 Calibration procedures for various resistivity

measurement equipment are given in the applicable

resistivity test method as summarized in Table 2.

10.2 For control of instruments for routine resistivity

measurements, a control chart for individuals with

moving range should be employed. In general, single

measurement determinations of resistivity are made for

routine purposes; therefore, the control should be

carried out on this basis. Established procedures should

be used for generating and maintaining the individuals

and moving range control charts, for determining the

existence of out-of-control conditions, and taking the

appropriate corrective action. A suggested procedure is

given in Section R1-4 for use in organizations without

previously established procedures.

11 Operator Training Requirements

11.1 Personnel responsible for selection and calibration

of resistivity reference wafers should be skilled in the

following areas:

11.1.1 Operation of four-point probe resistivity

measurement apparatus, including familiarity with

SEMI MF84 or DIN 50431,

11.1.2 Sources of radial and longitudinal resistivity

variations in silicon crystal,

11.1.3 Operation of resistivity mapping apparatus,

manual or automatic, as appropriate,

Table 2 Summary of Test Methods Applicable to Resistivity and Related Measurements

Measurement Equipment Applicable Test Method(s)

In-line Four-point Probe SEMI MF84 or DIN 50431

Non-contact Eddy-current Gage SEMI MF673, DIN 50445 or DIN 50447

Spreading Resistance Probe SEMI MF525 or SEMI MF672

Mercury Probe SEMI MF1392, SEMI MF1393 or DIN 50439

Dual-configuration Four-point Probe SEMI MF1529

11.1.4 Operation of eddy current gage, spreading

resistance probe, and mercury probe, as required,

including familiarity with appropriate standard test

methods (see Section 10.1),

11.1.5 Generation and maintenance of

and s control

charts for measurement equipment together with

recognition of out-of-control conditions and the

appropriate corrective action procedures,

11.1.6 Measurement of wafer thickness and TTV, and

11.1.7 Care and use of resistivity CRMs.

11.2 Individuals responsible for preparation of

resistivity reference wafers should have a good

understanding of wafer shaping processes, especially

slicing and lapping.

11.3 Operators and other personnel associated with the

use of resistivity reference wafers for calibration or

control of resistivity measurement equipment used in

production or for other routine measurements, should

be well trained in the use and maintenance of the

equipment as well as in meticulous record keeping;

accurate records are essential to the integrity of the

calibration and control procedures. Familiarity with

statistical process control procedures including

generation and maintenance of moving range control

charts, recognition of out-of-control conditions, and the

appropriate corrective action chain is also required.

12 Keywords

12.1 certified reference materials; control chart; eddy

current gage; four-point probe method; mercury probe;

reference materials; resistivity; resistivity reference

wafer; semiconductor; sheet resistance; silicon wafers;

SPC; spreading resistance probe; Standard Reference

Materials