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SEMI E135-0704 © SEMI 2004 1 SEMI E135-0704 TEST METHOD FOR RF GENERATO RS TO DETERMINE TRANSIENT RESPONSE FOR RF POWER DELI VERY SYSTEMS USED IN SEMICONDUCTOR PROC ESSING EQUIPMENT This test method was technically appro…

SEMI E131-0304 © SEMI 2004 5

RELATED INFORMATION 1

CALCULATION OF NOMINAL WAFER-SEATING PLANE

NOTICE: This related information is not an official part of SEMI E131 and was derived from work by the

originating task force. This related information was approved for publication by full letter ballot procedures on

December 4, 2003.

R1-1 The nominal wafer-seating plane is

calculated using values found in a number of

other standards, as follows.

R1-1.1 In SEMI E1.9 (the specification where this

plane is defined), the nominal wafer-seating plane is

referenced from the horizontal datum plane. SEMI

E15.1 defines the horizontal datum plane H to identify a

reference plane for positioning kinematic couplings.

While there are no kinematic couplings required for the

IMM, we use this same dimension as a starting point

for defining the nominal wafer-seating plane for wafer

insertion and removal. As in SEMI E15.1, the

horizontal datum plane is given at a height H relative to

the floor.

R1-1.2 Next, from SEMI E47.1 there is defined an

external horizontal datum plane (equal to the horizontal

datum plane from SEMI E15.1) and an internal

horizontal datum plane, where the internal horizontal

datum plane is located at a height of z44 above the

external horizontal datum plane.

R1-1.3 Then, FOUP slot number 1 is defined at a

height z8 in SEMI E1.9, but should be measured from

the internal horizontal datum plane from SEMI E47.1.

R1-1.4 Finally, z12 in SEMI E1.9 is the slot-to-slot

spacing within a cassette. So for a 25 substrate cassette,

the distance from the FOUP slot number 1 to slot 25 is

(25-1) * z12.

NOTICE: SEMI makes no warranties or

representations as to the suitability of the standards set

forth herein for any particular application. The

determination of the suitability of the standard is solely

the responsibility of the user. Users are cautioned to

refer to manufacturer' s instructions, product labels,

product data sheets, and other relevant literature,

respecting any materials or equipment mentioned

herein. These standards are subject to change without

notice.

By publication of this standard, Semiconductor

Equipment and Materials International (SEMI) takes no

position respecting the validity of any patent rights or

copyrights asserted in connection with any items

mentioned in this standard. Users of this standard are

expressly advised that determination of any such patent

rights or copyrights, and the risk of infringement of

such rights are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI E135-0704 © SEMI 2004 1

SEMI E135-0704

TEST METHOD FOR RF GENERATORS TO DETERMINE TRANSIENT

RESPONSE FOR RF POWER DELIVERY SYSTEMS USED IN

SEMICONDUCTOR PROCESSING EQUIPMENT

This test method was technically approved by the Global Metrics Committee and is the direct responsibility

of the North American Metrics Committee. Current edition approved by the North American Regional

Standards Committee on April 22, 2004. Initially available at www.semi.org on June 2004; to be published

July 2004.

1 Purpose

1.1 The purpose of this document is to define a test

method used to determine the transient response for an

RF Generator used in RF power delivery systems for

semiconductor processing equipment to support SEMI

E113.

2 Scope

2.1 This document specifies the testing procedures and

test equipment required for determining the transient

response of an RF generator operating into a nominal

50-ohm load as a function of the change in set point

level, including the time delay between the request for

power (i.e., RF enable signal) and the start or stop of

the RF output signal.

2.2 The primary focus for this document is

semiconductor processing equipment including, but not

limited to, the following tool types:

• Dry etch equipment,

• Film deposition equipment (CVD and PVD).

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety and health practices and determine

the applicability of regulatory or other limitations prior

to use.

3 Limitations

3.1 This standard addresses RF generators used in RF

systems that primarily operate in the frequency range of

0.2–100 MHz. It does not address higher frequency RF

systems or microwave systems.

3.2 This standard is meant for analyzing RF generators

that are designed to have a nominal characteristic

impedance of 50 ohms. This standard can also be used

with RF generators with a different characteristic

impedance if the appropriate standard terminations are

used.

3.3 International, national, and local codes, regulations

and laws should be consulted to ensure that the

equipment and procedures meet regulatory

requirements in each location.

3.4 This standard does not address any safety or

performance issues related to RF emissions or electrical

codes (e.g., Underwriter’s Laboratory, Inc. (UL), the

National Electrical Code (NEC), Federal

Communications Commission (FCC)). It is the

responsibility of the users of this standard to conform to

the appropriate local codes and regulations as applied to

this type of equipment, some of which are covered by

referenced documents.

4 Referenced Standard

4.1 SEMI Standard

SEMI E113 — Specification for Semiconductor

Processing Equipment RF Power Delivery Systems

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

5 Terminology

5.1 Abbreviations and Acronyms

5.1.1 CVD — Chemical Vapor Deposition

5.1.2 PVD — Physical Vapor Deposition

5.1.3 RF — Radio Frequency

5.1.4 VSWR — Voltage Standing Wave Ratio

5.2 Definitions of Terms

5.2.1 cable assembly — the section of cable

(transmission line), including the connectors, used to

connect various parts of the RF power delivery system.

5.2.2 device under test (DUT) — the RF generator to

be tested.

5.2.3 load impedance — the load impedance is the

impedance to which a generator is attached.

5.2.4 RF enable signal — the signal that a generator

receives to turn on the output power.

5.2.5 RF set point signal — the signal that a generator

receives that corresponds to a desired output power.

SEMI E135-0704 © SEMI 2004 2

6 Test Apparatus

6.1 Digital Oscilloscope — The Digital Oscilloscope is

used to measure the RF enable signal, the RF set point

signal, and the RF power output signal. It shall have a

digitization rate of at least 500 mega-samples per

second per channel. The Digital Oscilloscope shall

have an up-to-date calibration per the manufacturer.

6.2 RF Rectifier/Diode Detector — A device that

converts an RF signal into a DC signal is used to

measure a signal related to the output power of the RF

generator. The input RF signal is produced by the RF

Signal Sampler. The output DC signal goes to the

Digital Oscilloscope.

6.3 RF Signal Sampler — A device that will detect RF

voltage and/or current and produce a reduced-level RF

signal is used for detection purposes. The sampler can

be a non-directional coupler or a directional coupler

that detects forward power. The reduced-level signal

produced by the sampler is typically −40 to −50 dB

(decibels) below the RF signal being detected.

6.4 RF Set Point Signal Generator — A device that

will produce a DC signal that is used to set the desired

RF generator output. The device is connected to the

controller input of the RF Generator and is measured

with the Digital Oscilloscope.

6.5 RF Enable Signal Generator — A device that will

produce a DC signal that is used to turn-on and turn-off

the RF generator output power. The device is

connected to the controller input of the RF Generator

and is measured with the Digital Oscilloscope.

6.6 RF Power Meter — A device that will measure the

output power of the RF generator that is used. It shall

have an absolute power accuracy of ± 3 percent and a

measurement repeatability of ± 1 percent.

6.7 RF Adapters and Terminations — Various adapters

may be necessary to convert between different types of

coaxial connectors (e.g., type N to type HN adapters).

All adapters used shall have the same nominal

characteristic impedance as the system, which is

typically 50 ohms. For some measurements, additional

coaxial cable assemblies are used. These cable

assemblies shall also be of the same nominal

characteristic impedance as the system.

6.8 High-Power RF Dummy Load — A high power RF

load is used to absorb the power produced by the

generator. It shall have the same nominal characteristic

impedance as the RF generator, which is typically 50

ohms. The RF dummy load shall have a power

handling capability that is compatible with the RF

generator being tested.

7 Safety Precautions

7.1 Work should be conducted in accordance with local

safety requirements and test device manufacturer

recommended safety procedures.

7.2 The area immediately surrounding the Test Setup

shall be keep free and clear of unnecessary equipment

and materials.

8 Test Setup for Measuring the Transient

Response of the RF Generator as a Function of

the Change in Set Point

8.1 The test setup for measuring the transient response

of the RF generator consists of an RF Enable Signal

Generator, an RF Set Point Signal Generator, a Digital

Oscilloscope, the RF Generator (DUT), an RF Signal

Sampler, an RF Rectifier/Diode Detector, an RF Power

Meter, and a High-Power Dummy Load. A schematic

of the test setup is shown in Figure 1. All signal cables

that are used to connect to the Digital Oscilloscope

should be of comparable length so that there is no

significant time delay between the signals measured by

the Digital Oscilloscope.

8.2 Prior to making any measurements, the Digital

Oscilloscope and other electronic test equipment shall

be turned on and allowed to warm up per the

manufacturer’s guidelines before the testing is to take

place. This time will allow for electronics to come to a

stable operating condition for the measurements.

9 Test Procedure for Measuring the Transient

Response of the RF Generator as a Function of

the Change in Set Point

9.1 The test procedure described below compares the

change in the set point signal (produced by the RF Set

Point Signal Generator) to the signal produced by the

DUT. The Set Point signal is an input to the DUT and

is used by the DUT to produce the desired output power

level, per the DUT manufacturer’s instructions. The

DUT output power level is measured with the RF

Signal Sampler. The signal from the RF Signal

Sampler is used by the RF Rectifier/Diode Detector to

produce a DC signal that corresponds to the RF output

power from the DUT. The Digital Oscilloscope

measures both the Set Point signal and the RF Detector

signal.

9.2 Test Method for Measuring the Transient Response

of the RF Generator as a Function of the Change in Set

Point

9.2.1 Connect the outputs of the RF Enable Signal

Generator and the RF Set Point Signal Generator to the

controller input of the DUT. Connect the RF power

output of the DUT to the input of the RF Signal