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SEMI M16-1103 © SEMI 1989, 2003 5 R1-3.1.2 SEMI M16 speci fies that samples for photoluminescence a nd infrared measurements are to be prepared from nugget and rod forms in accordance with SEMI MF1723 and from gra nula r…
SEMI M16-1103 © SEMI 1989, 2003 4
RELATED INFORMATION 1
RELATIONSHIPS BETWEEN THE REQUIREMENTS OF SEMI M16 AND
THE REQUIREMENTS OF JEITA EM-3601
NOTICE: This related information is not an official part of SEMI M16. It was developed during the
revision of the document in May 2003. This related information was approved for publication by full letter
ballot on September 19, 2003.
R1-1 Introduction
R1-1.1 SEMI M16 and JEITA EM-3601 both provide
specification requirements for polycrystalline silicon
(poly) in nugget (chunk), granular, and rod forms.
R1-1.2 This related information section provides
comparisons between the two specifications with regard
both to the specification requirements and to the test
methods cited.
R1-2 Specification Requirements
R1-2.1 The philosophies of the two specifications are
quite different in that JEITA EM-3601 spells out
specific purity requirements, while SEMI M16 leaves
these to be “as specified by the customer.” The levels
specified in JEITA EM-3601 may serve as a starting
point for developing the necessary specifications.
R1-2.2 Purity Requirements
R1-2.2.1 JEITA EM-3601 lists the following bulk
purity requirements for the nugget and rod forms:
R1-2.2.1.1 Acceptor concentration, maximum:
• B 0.05 ppba
• Al 0.05 ppba
R1-2.2.1.2 Donor concentration, maximum:
• P 0.3 ppba
• As 0.05 ppba
R1-2.2.1.3 Carbon concentration, maximum:
• C 0.3 ppma
R1-2.2.2 JEITA EM-3601 lists the following bulk
purity requirements for the granular form:
• Total acceptors (B+ Al) 0.1 ppba, maximum
• Total donors (P+ As) 0.4 ppba, maximum
• Carbon 0.3 ppma, maximum
R1-2.2.3 JEITA EM-3601 lists the following surface
metal contamination requirements for the nugget and
granular forms (maximum surface metal contamination
levels are not listed for the rod form):
• Fe, Cr, Ni, and Na 3.0 ppbw, maximum
• Zn 1.0 ppbw, maximum
NOTE 2: These surface metal concentrations correspond to
1.5 ppba for Fe, Cr, and Ni; 3.8 ppma for Na; and 0.5 ppba for
Zn.
R1-2.3 Size Distribution — See Tables R1-1 through
R1-3.
Table R1-1 Size Requirements for Nugget Form
Poly
JEITA EM-3601 SEMI M16
Maximum Dimension 120 mm 150 mm
Minimum Dimension 10 mm not specified
Table R1-2 Size Requirements for Granular Form
Poly
JEITA EM-3601 SEMI M16
Maximum Size
3,500 µm 2,500 µm
Minimum Size
150 µm 200 µm
Mean Size not specified
~ 900 µm
Table R1-3 Size Requirements for Rod Form Poly
JEITA EM-3601 SEMI M16
Minimum Length not specified rod diameter
R1-3 Test Method Requirements
R1-3.1 Sample Preparation
R1-3.1.1 JEITA EM-3601 contains instructions for
preparing samples for photoluminescence, infrared
absorption, and atomic absorption spectroscopy
measurements. It cites the 1996 edition of JIS H 0615
for the preparation of samples from nugget and rod
forms for photoluminescence measurements.
SEMI M16-1103 © SEMI 1989, 2003 5
R1-3.1.2 SEMI M16 specifies that samples for
photoluminescence and infrared measurements are to be
prepared from nugget and rod forms in accordance with
SEMI MF1723 and from granular form in accordance
with SEMI MF1708. Samples for atomic absorption
spectroscopy measurements are to be prepared in
accordance with SEMI MF1724.
R1-3.1.3 The preparation procedures are generally
similar, except that JIS H 0615 allows coring only
perpendicular to the rod filament, but SEMI MF1723
permits coring parallel with the rod filament in addition
to perpendicular to the rod filament.
R1-3.2 Measurement Procedures
R1-3.2.1 The photoluminescence technique is specified
for measurement of donor and acceptor concentrations
in both JEITA EM-3601 and in SEMI M16 (through
reference to SEMI MF1723); the latter also allows this
determination by low temperature FT-IR analysis. The
photoluminescence technique is covered in SEMI
MF1389 and in JIS H 0615. The latter, specified in
JEITA EM-3601, allows only the high excitation
condition for the photoluminescence analysis while the
former allows either high or low excitation.
R1-3.2.2 The infrared absorption method is specified
for the carbon determination in both SEMI M16 and
JEITA EM-3601. The two cited test methods, SEMI
MF1391, specified in SEMI M16 (through reference to
SEMI MF1723), and JEITA EM-3503, cited in JEITA
EM-3601, are essentially equivalent.
R1-3.2.3 Atomic absorption spectroscopy is specified
for the surface metal contamination in both SEMI M16
and JEITA EM-3601. The two cited test methods,
SEMI MF1724, specified in SEMI M16, and JIS K
0121, cited in JEITA EM-3601, are essentially
equivalent insofar as the actual measurement is
concerned, but SEMI MF1724 also standardizes the
sampling procedures, etching solutions, and method of
collecting the impurities in much greater detail.
NOTICE: SEMI makes no warranties or
representations as to the suitability of the standards set
forth herein for any particular application. The
determination of the suitability of the standard is solely
the responsibility of the user. Users are cautioned to
refer to manufacturer’s instructions, product labels,
product data sheets, and other relevant literature
respecting any materials mentioned herein. These
standards are subject to change without notice.
The user’s attention is called to the possibility that
compliance with this standard may require use of
copyrighted material or of an invention covered by
patent rights. By publication of this standard, SEMI
takes no position respecting the validity of any patent
rights or copyrights asserted in connection with any
item mentioned in this standard. Users of this standard
are expressly advised that determination of any such
patent rights or copyrights, and the risk of infringement
of such rights, are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o
f
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI M17-0704 © SEMI 1990, 2004 1
SEMI M17-0704
GUIDE FOR A UNIVERSAL WAFER GRID
This specification was technically approved by the Global Silicon Wafer Committee and is the direct
responsibility of the North American Silicon Wafer Committee. Current edition approved by the North
American Regional Standards Committee on April 22, 2004. Initially available at www.semi.org May 2004;
to be published July 2004. Originally published in 1990; previously published September 1998.
1 Purpose
1.1 Maximum allowable slip and other non-uniformly
distributed defects are frequently specified when
procuring polished and epitaxial silicon wafers. SEMI
M2 specifies a maximum allowable fraction of the
epitaxial wafer surface area that can contain slip.
1.2 This guide provides a design for and guidance for
use of a wafer grid that facilitates the determination of
the fraction of the wafer surface area covered by
observed defects.
2 Scope
2.1 This document defines a grid pattern that is useful
for quantifying surface defects on a nominally circular
semiconductor wafer. The grid is defined such that it
contains 1000 elements of approximately equal area.
Each grid element thus contains 0.1 percent of the total
quality area of the surface being inspected. Defects that
are non-uniformly distributed (for example, slip) can be
quantified in terms of the percent defective (or percent
useful) area on the wafer surface.
2.2 The grid described is referenced to the center of the
wafer. A concept of a “Fixed Quality Area” is used,
based on nominal wafer diameter, such as is specified
in SEMI M1.
2.3 Methods for observing these defects on silicon
wafer surfaces are outside the scope of this guide. Such
methods may be found in SEMI MF1725, SEMI
MF1726, JIS H 0609, and DIN 50434.
NOTICE: This standard does not purport to address
safety issues, if any, associated with its use. It is the
responsibility of the users of this standard to establish
appropriate safety and health practices and determine
the applicability of regulatory or other limitations prior
to use.
3 Referenced Standards
3.1 SEMI Standards
SEMI M1 — Specifications for Polished
Monocrystalline Silicon Wafers
SEMI M2 — Specifications for Silicon Epitaxial
Wafers for Discrete Device Applications
SEMI MF154 —Guide for Identification of Structures
and Contaminants Seen on Specular Silicon Surfaces
SEMI MF1241 — Terminology of Silicon Technology
SEMI MF1725 — Practice for Analysis of
Crystallographic Perfection of Silicon Ingots
SEMI MF1726 — Practice for Analysis of
Crystallographic Perfection of Silicon Wafers
SEMI MF1809 — Guide for Selection and Use of
Etching Solutions to Delineate Structural Defects in
Silicon
3.2 Japan Industrial Standard
1
JIS H 0609 — Test methods of crystalline defects in
silicon by preferential etch techniques
3.3 DIN Standard
2
50434 — Determination of Crystal Defects in
Monocrystalline Silicon Using Etching Techniques on
{ 111} and { 100} Surfaces
NOTICE: Unless otherwise indicated, all documents
cited shall be the latest published versions.
4 Terminology
4.1 Definitions for many surface defects are given in
SEMI MF1241. Additional information and illustrations
of various surface defects are provided in SEMI
MF154, SEMI MF1809, and JIS H 0609.
5 Grid Element Layout
5.1 Grid Element Scheme
5.1.1 Two types of grids are defined: one for wafers
without a primary flat (for example, wafers where the
primary fiducial is a notch), and one for wafers with a
primary flat. The grid is divided by 18 concentric
circles containing radial divisions which are assigned
according to the diameter of each circle (see Table 1).
The relative diameters of the concentric circles are
established by the areas of each annulus. To find the
1 Available, in Japanese language edition only, through the Japanese
Standards Association, 1-24, Akasaka 4-Chome, Minato-ku, Tokyo
107-8440, Japan. Telephone: 81.3.3583.8005; Fax: 81.3.3586.2014
Website: www.jsa.or.jp
2 Available from Deutches Institut für Normung e.V., Beuth Verlag
GmbH, Burggrafenstrasse 4-10, D-10787 Berlin, Germany, website:
www.din.de