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SEMI M55.1-0304 © SEMI 2004 3 t ilt a ngl e t i l t a ngl e of f t ow a rd s [ 1 120 ] di r ec t i o n of f tow ard s [ 1 100 ] dir e c t i o n [1 1 2 0 ] di r e ct i on [ 1 12 0] di re ct i on ( 110 0 ) p lan e ( 1 1 00…
SEMI M55.1-0304 © SEMI 2004 2
Table 3 Orientation and Flat Location Requirements
Property Dimension
SURFACE ORIENTATION
(see Note 1)
Tilt angle (see Figure 2 in SEMI M55)
Option 1: “on axis”
0 + 0.25°
Option 2: “off axis (1120)”
3.5° ± 0.5° parallel to edge of primary flat away from secondary flat
(see Note 1)
Option 3: “off axis (1120)”
8.0° ± 0.5° parallel to edge of primary flat away from secondary flat
(see Note 1)
Option 4: “off axis (1100)”
3.5° ± 0.5° parallel to edge of secondary flat away from primary flat
(see Note 1)
Option 5: “off axis (1100)”
8.0° ± 0.5° parallel to edge of secondary flat away from primary flat
(see Note 1)
ORTHOGONAL MISORIENTATION
± 5° (See Figure 2 in SEMI M55)
TOLERANCE OF PRIMARY FLAT
ORIENTATION
± 1°
TOLERANCE OF SECONDARY FLAT
ORIENTATION (see Note 4)
± 5° relative to primary flat
NOTE 1: The frame of reference is the (0001)-plane of the crystal. It is the wafer normal on the silicon-face that is tilted towards the given
crystallographic direction. That means that the crystallographic c-axis lies between the secondary/primary flat (for the (1120)/(1100) option) and
the silicon-face surface normal vector (See Figure 1 and 2).
NOTE 2: The angle between primary and secondary flat is defined in Figure 5 in SEMI M55.
Secondary flat
Si-face
Normal vector to
wafer surface
Crystallographic
c-axis
C-face
Primary flat
Si-face
Normal vector to
wafer surface
Crystallographic
c-axis
C-face
Figure 1
Definition of the Sign of the Tilt Angle (left: off axis (1120) -option, right off axis (1100) Option)
SEMI M55.1-0304 © SEMI 2004 3
tilt angle tilt angle
off towards [1120]
direction
off towards [1100 ]
dir ec tion
[1120]
dire cti on
[1120]
directi on
(1100) plane
(1100) p lan e
Figure 2
Direction of Tilt (left: (1120) option, right off axis (1100) option)
Table 4 Polished Wafer Defect Limits
Item Characteristics Maximum Defect Limit Test Condition Note
Front Surface
1 visible scratches none high intensity, unaided eye 1
2 pits (number) 10 high intensity, unaided eye 1
3 orange peel (area) 10 % diffuse, unaided eye 1
4 particles (number) 4 high intensity, unaided eye 1
5 edge chips and indents (number)
≤ 3 with maximum length and
width 1.0 mm
Back Surface
6 edge chips (number)
≤ 3 with maximum length and
width 1.0 mm
Bulk
7 cracks (number) none diffuse, unaided eye
8 micropipes (mean density) defined by customer and supplier
9 planar defects,
spacing >2 mm (number)
10 diffuse, unaided eye 1
10 planar defects,
spacing ≤ 2 mm (affected area)
10 % diffuse, unaided eye 1
11 crystallite (area) 5 % diffuse, polarisers 1
12 foreign polytypes (area) 10 % diffuse 1
Cumulative Defect Area
12 all listed defects of type “area” total 10 % 1
NOTE 1: The Edge-Exclusion X (See Figure 1 of SEMI M55) is 1 mm.
SEMI M55.1-0304 © SEMI 2004 4
Table 5 Laser Marking Requirements (see figure 8 of SEMI M55)
Property Dimension Units
GEOMETRY
dimension A 0.5 mm
dimension B 2.0 mm
dimension C 7.5 mm See Note 1.
CHARACTER DIMENSIONS
AND OUTLINE
not defined readable with unaided eye (SEMI M55)
CHARACTER SET Defined by SEMI M12
FORMAT OF ID-STRING
(see Note 2)
NNNNNNNNNNSSCC NNNNNNNNNN: (10 characters)
supplier defined ID of wafer, with a dash as separator.
Unused characters are filled with dash characters.
Alphanumeric.
SS: (2 characters)
Supplier Code as defined in SEMI AUX001. Alpha
only.
CC: (2 characters)
Checksum Characters generated by the algorithm
defined in SEMI M12.
The first character is alpha only, the second numeric
only.
NOTE 1: The total width of the marking window is twice dimension C.
NOTE 2: This definition of the ID-string is intended to identify wafers from different suppliers and to support use of OCR-techniques. Both
cannot be accomplished with the currently widely used proprietary formats for the ID-strings.
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