semi合集-English.pdf - 第7545页
SEMI MF1809-0704 © SEMI 2003, 2004 10 Low Resistivity Boron Doped (100) Wafer; 1100° C Steam, 80 minute Oxidation; Wrigh t Etch with Agitat ion Figure 27 Oxidation Stacking Faults, 500 × (111) Wafer; 1100° C Steam, 80 mi…
SEMI MF1809-0704 © SEMI 2003, 2004 9
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 15 µm removal
Figure 21
Bulk Oxidation Stacking Fault, 200
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Secco
Etch with Agitation; ~ 15 µm removal
Figure 22
Scratch Induced Oxidation Stacking Faults, 100
×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 23
Damage Induced Oxidation Stacking Fault, 1000×
(100) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 24
Bulk Oxidation Stacking Fault, 1000
×
Boron doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 25
Scratch Induced Oxidation Stacking Faults, 500
×
Antimony doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 26
Scratch Induced Oxidation Stacking Faults, 500
×
SEMI MF1809-0704 © SEMI 2003, 2004 10
Low Resistivity Boron Doped (100) Wafer; 1100° C Steam,
80 minute Oxidation; Wright Etch with Agitation
Figure 27
Oxidation Stacking Faults, 500
×
(111) Wafer; 1100° C Steam, 80 minute Oxidation; Wright
Etch with Agitation
Figure 28
Oxidation Induced Stacking Faults, 500
×
(111) Wafer; Wright Etch with Agitation
Figure 29
Slip Dislocations, 500
×
(100) Wafer; Wright Etch with Agitation
Figure 30
Slip Dislocations, 200
×
Boron doped (100) Wafer; 1100° C Steam, 80 minute
Oxidation; Wright Etch with Agitation
Figure 31
Shallow Pits (Haze), 500
×
Boron Doped Wafer; Wright Etch
Figure 32
Etching Stain Artifact, 200
×
SEMI MF1809-0704 © SEMI 2003, 2004 11
RELATED INFORMATION 1
RELATIONSHIPS BETWEEN SEMI MF1809 AND JIS H-0609
NOTICE: This related information is not an official part of SEMI MF1809. It was developed by the task
force during the revision of the document in 2003. This related information was approved for publication
by full letter ballot on April 22, 2004.
R1-1 Both this guide and test method JIS H-0609
identify etching solutions for use in delineating
structural defects in silicon. As indicated in 2.3, this
guide is intended to be used with other practices and
test methods while JIS H-0609 covers the entire
delineation and counting process.
R1-2 JIS H-0609 contains sections on terminology,
sample preparation, including thermal oxidation, selec-
tion of etchants, etching procedures, measurement loca-
tions, and measurement methods for various crystalline
defects.
R1-2.1 The definitions of the various crystal defects
are generally similar to those in SEMI MF1241 with
only minor differences in emphasis.
R1-2.2 Sample preparation and etching procedures are
similar in most respects to the procedures in SEMI
MF1725, SEMI MF1726, and (for thermal oxidation)
SEMI MF1727. The minor differences in definitions
are not considered to be technically significant.
R1-2.3 JIS H-0609 covers only non-chromic etching
solutions that differ from those covered in this guide.
Tables R1-1 and R1-2 list the etching solutions
discussed in JIS H-0609. Detailed discussions of the
suitability of the various etching solutions and
microphotographs of exposed crystal defects are
provided in JIS H-0609, similarly to the manner in
which similar information is provided in this guide.
Although JIS H-0609 does not cover the use of chrome-
containing etching solutions, it does contain com-
parisons with the etch rates of several chrome-con-
taining etching solutions, including Secco, Wright, and
Sirtl etches (see Section 9 for references to these
etching solutions).
R1-2.4 JIS H-0609 covers a variety of different mea-
suring locations and counting procedures for various
different crystal defects, unlike SEMI MF1810, which
describes only a method for counting etch pits in a
specified pattern. Visual inspection of some defect
types is recommended by JIS H-0609; such visual
inspection is also covered in SEMI MF523. JIS H-0609
includes a discussion of observation of denuded zone,
but because of the variety of technologies in place for
this aspect, no standardized measurement method is
defined.
Table R1-1 Composition of preferential etching solutions (I) (volume ratio) from JIS H-0609
Etching Solution Hydrofluoric Acid Nitric Acid Acetic Acid Water
A 1 12.7 3 3.7
B 1 12.7 3 5.7
C 1 12.7 1 6.7
D 2 12.7 2 6.7
Table R1-2 Composition of preferential etching solutions (II) (volume ratio) from JIS H-0609
Applicable Wafer
Dopant, Crystal Surface
Etching
Solution
HF HNO
3
CH
3
COOH H
2
O
Additive Reagent Name:
Concentration
E(Note 1) 1 2.5 — 10.5 AgNO
3
: 0.005 mol/L(Note 2)
F(Note 1) 3 5.1 — 7.9
B (100)
G 1 12.7 — 6.3
Sb (100) H 2 5.9 2 6.1 KI: 0.1~ 0.5 g/L(Note 3)
Sb (111) I 2 6.8 2 6.2 KI: 0.1~ 0.5 g/L(Note 3)
NOTE 1: E and F Etches form a stain film. The stain film can be removed by rinsing the stained wafer and dipping it into B Etch for 5~ 10 s.
NOTE 2: By mixing 8 mL of 0.005 mol/L silver nitrate (AgNO
3
) aqueous etching solution into E Etch, the starting time of the reaction can be
advanced.
NOTE 3: By mixing 0.1~ 0.5 g/L potassium iodide (KI) to H and I Etches, stain film formation can be suppressed.