semi合集-English.pdf - 第5047页
SEMI M18-0704 © SEMI 1990, 2004 33 Line Item EDI Code ID Sub Param ID 25.12 SOI Etch Pit 100238 25.13 Threading Dislocation 100239 25.14 HF Defect 100240 25.15 Void 100241 25.16 Roughness (Si surface) rms @ 2 × 2 µ m 100…
SEMI M18-0704 © SEMI 1990, 2004 32
Line Item EDI Code ID Sub Param ID
13.14 Localized Light Scatterers (LLS)
4
100192 ≥ 0.03µ
13.14 Localized Light Scatterers (LLS)
4
100193 ≥ 0.02µ
13.15 Surface Edge Exclusion 100194
14.01 [ ] Specified According to SEMI M11 Table [ ] 100195
14.2 Scratches -- macro 100196
14.3 Scratches -- micro 100197
14.4 Localized Light Scatterers 100198
100199
20.1 Annealing Atmosphere 100200
20.2 Other Dopant in Crystal 100201
21.1 Bow 100202
21.2 Warp 100203 SEMI MF657
21.2 Warp 100204 SEMI MF1390
21.3 Sori 100205
21.4 Flatness/Global 100206
21.5 Flatness/Site 100207 SF3R
21.5 Flatnes/Site 100208 SF3D
21.5 Flatness/Site 100209 SFLR
21.5 Flatness/Site 100210 SFLD
21.5 Flatness/Site 100211 SFQR
21.5 Flatness/Site 100212 SFQD
21.5 Flatness/Site 100213 SBIR
21.5 Flatness/Site 100214 SFSR
21.6 Fixed Quality Area 100215
22.1 Stacking Faults 100216
22.2 Slip 100217
23.1 Contamination 100218
24.1 Depth of BMD Denuded Zone 100219
24.2 BMD Density 100220
6.14 Flatness/Site 100221 SFSD
12.5 Flatness/Site 100222 SFSD
12.5 Flatness/Site 100223 SBID
21.5 Flatness/Site 100224 SFSD
21.5 Flatness/Site 100225 SBID
25.0 Type of SOI 100226
25.1 Starting silicon wafer for SOI 100227
25.2 Surface Silicon Thickness 100228
25.3 Surface Silicon Thickness Mean Value Variation 100229
25.4 Surface Silicon Thickness Variation in Wafer 100230
25.5 Crystal Orientation 100231
25.6 Rotation Misalignment 100232
25.7 Edge Exclusion, Nominal 100233
25.8 Non-SOI Edge Area 100234
25.9 Conductivity Type 100235
25.10 Dopant 100236
25.11 Dopant Concentration 100237
SEMI M18-0704 © SEMI 1990, 2004 33
Line Item EDI Code ID Sub Param ID
25.12 SOI Etch Pit 100238
25.13 Threading Dislocation 100239
25.14 HF Defect 100240
25.15 Void 100241
25.16 Roughness (Si surface)
rms @ 2 × 2µm
100242
Roughness (Si surface)
rms @ 10 × 10µm
100243
Roughness (Si surface)
rms @ [ ] × [ ]µm
100244
Roughness (Si surface)
rms @ [ ] × [ ]µm
100245
25.17 Surface Metal Contamination (Fe) 100246
Surface Metal Contamination (Cr) 100247
Surface Metal Contamination (Ni) 100248
Surface Metal Contamination (Cu) 100249
Surface Metal Contamination [ ] 100250
Surface Metal Contamination [ ] 100251
Surface Metal Contamination [ ] 100252
Surface Metal Contamination [ ] 100253
Surface Metal Contamination [ ] 100254
Surface Metal Contamination [ ] 100255
26.1 BOX Thickness 100256
26.2 BOX Thickness Variation 100267
26.3 Bonded Interface Location 100258
26.4 BOX Pinholes 100259
26.5 Dielectric Breakdown 100260
27.1 Warp 100261
27.2 Flatness-site 100262
28.1 Scratch 100263
28.2 Haze 100264
28.3 LLS
@particle size
100265
100266
28.4 Slip 100267
28.5 Edge Chip 100268
28.6 Edge Crack 100269
28.7 Foreign Matter 100270
29.1 Backside Metal Contamination (Fe) 100271
Backside Metal Contamination (Cr) 100272
Backside Metal Contamination (Ni) 100273
Backside Metal Contamination (Cu) 100274
Backside Metal Contamination [ ] 100275
Backside Metal Contamination [ ] 100276
Backside Metal Contamination [ ] 100277
Backside Metal Contamination [ ] 100278
Backside Metal Contamination [ ] 100279
Backside Metal Contamination [ ] 100280
SEMI M18-0704 © SEMI 1990, 2004 34
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