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SEMI M47-0704 © SEMI 2001, 2004 5 Specification Units Item SIMOX Bonded Standard reference Test method 26. BOX CHARACTERISTICS 26.1 BOX Thickness ≤ 0.4 (µm) See NOTE 1. ≤ 0.4 (µm) See NOTE 1. Spectroscopic ellipsometry, …

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SEMI M47-0704 © SEMI 2001, 2004 4
Specification Units Item
SIMOX Bonded
Standard
reference
Test method
(Refer to SEMI
M18.)
(Refer to SEMI M18.)
8. FRONT SURFACE VISUAL INSPECTION CHARACTERISTICS
8.01 Specified according to
SEMI M1 Table 1
SEMI MF523 Visual inspection
9. BACK SURFACE VISUAL INSPECTION CHARACTERISTICS
9.01 Specified according to
SEMI M1 Table 1
SEMI MF523 Visual inspection
SOI Wafer
25. SOI LAYER CHARACTERISTICS
25.0 Type of SOI SIMOX Bonded
25.1 Growth Method CZ See NOTE 1.
25.2 Surface Silicon Thickness
≤ 0.2 (µm)
See NOTE 1.
≤ 0.2 (µm)
See NOTE 1.
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
25.3 Surface Silicon Thickness
Mean Value Variation
≤ ± 5 (nm) ≤ ± 5 (nm)
See NOTE 2.
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
25.4 Surface Silicon Thickness
Variation in Wafer
≤ ± 3 (nm) ≤ ± 7.5 (nm)
See NOTE 2.
25.5 Crystal Orientation
(100) ± 1° (100) ± 1°
SEMI MF26 X-ray diffraction
25.6 Rotation Misalignment NA
≤ ± 1°
Visual
25.7 Edge Exclusion, Nominal 5 (mm)
See NOTE 3.
5 (mm)
See NOTE 3.
25.8 Non-SOI Edge Area NA ≤ 3 (mm)
Visual
25.9 Conductivity Type P-type P-type SEMI MF42
25.10 Dopant Boron Boron Secondary ion mass
spectroscopy
25.11 Dopant Concentration See NOTE 1. See NOTE 1. Secondary ion mass
spectroscopy
25.12 SOI Etch Pit < 1 × 10
6
(/cm
2
) < 1 × 10
4
(/cm
2
) Secco's etching
25.13 Threading Dislocation < 5 × 10
4
(/cm
2
)
(LD)
< 5 × 10
5
(/cm
2
)
(HD)
NA Secco's etching
25.14 HF Defect < 0.5 (/cm
2
) < 0.5 (/cm
2
)
(150 mmφ)
< 0.3 (/cm
2
)
(200 mmφ)
HF etching
25.15 Void NA See NOTE 1. Visual, Automated
particle counter
25.16 Roughness (Si surface)
rms @ 2 × 2µm
< 0.4 (nm) < 0.2 (nm) JEITA EM-3505 Atomic force microscope
25.17 Surface Metal
Contamination (Fe, Cr,
Ni, Cu)
< 5 × 10
10
(/cm
2
)
for each atom
< 5 × 10
10
(/cm
2
) for
each atom
SEMI MF1526 TXRF
AAS, ICP-MS
SEMI M47-0704 © SEMI 2001, 2004 5
Specification Units Item
SIMOX Bonded
Standard
reference
Test method
26. BOX CHARACTERISTICS
26.1 BOX Thickness
≤ 0.4 (µm)
See NOTE 1.
≤ 0.4 (µm)
See NOTE 1.
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
26.2 BOX Thickness Variation
≤ ± 5 (%) ≤ ± 5 (%)
Spectroscopic
ellipsometry,
Spectroscopic
reflectometry
26.3 Bonded Interface Location
NA See NOTE 1.
26.4 BOX Pinholes < 0.5 (/cm
2
) (LD)
< 0.1 (/cm
2
) (HD)
< 0.1 (/cm
2
) Cu plating, BOX
capacitor
26.5 Dielectric Breakdown > 5 (MV/cm) > 6 (MV/cm) BOX capacitor
27. MECHANICAL CHARACTERISTICS
27.1 Warp < 40 (µm) (LD)
< 50 (µm) (HD)
< 40 (µm) SEMI MF1390 Automated noncontact
scanning
27.2 Flatness-site See NOTE 1.
(Refer to SEMI
M18.)
See NOTE 1.
(Refer to SEMI M18.)
28. FRONT SURFACE VISUAL INSPECTION CHARACTERISTICS
28.1 Scratch None None SEMI MF523 Visual inspection
28.2 Haze None None SEMI MF523 Visual inspection
28.3 LLS
@particle size
≤ 0.3 (/cm
2
) @ >
0.25 µm
≤ 0.3 (/cm
2
) @ > 0.2
µm
SEMI MF523 Automated particle
counter
28.4 Slip See NOTE 1. See NOTE 1. SEMI MF523 Visual inspection
28.5 Edge Chip SEMI M1 SEMI M1 SEMI MF523 Visual inspection
28.6 Edge Crack SEMI M1 SEMI M1 SEMI MF523 Visual inspection
28.7 Foreign Matter See NOTE 1. See NOTE 1. SEMI MF523 Visual inspection
29. BACK SURFACE CHARACTERISTICS
29.1 Backside Metal
Contamination (Fe, Cr,
Ni, Cu)
< 1 × 10
11
(/cm
2
)
for each atom
< 1 × 10
11
(/cm
2
) for
each atom
AAS, ICP-MS
NOTE 1: to be specified or discussed between users and suppliers
NOTE 2: typically 0.1 µm and thicker SOI are specified. Thinner SOI is to be discussed between users and suppliers.
NOTE 3: It is specified by a distance from the FQA boundary to the periphery of a base wafer of nominal dimensions. It is not a distance from an
edge of an SOI layer.
NA: not applicable
LD: Low dose SIMOX
with BOX thickness ≤ 200 nm
HD: High dose SIMOX with BOX thickness > 200 nm
7 Sampling Plan
7.1 Unless otherwise specified, ASTM Practice E 122
shall be used. When so specified, appropriate sample
sizes shall be selected from each lot in accordance with
ANSI/ASQC Z1.4. Each quality characteristic shall be
assigned with an acceptable quality level (AQL) of lot
tolerance percent defective (LTPD) value in accordance
with ANSI/ASQC Z1.4 definitions for critical, major,
and minor classifications. If desired and so specified in
the contract or order, each of these classifications may
alternatively be assigned cumulative AQL or LTPD
values. Inspection levels shall be agreed upon between
users and suppliers.
8 Test Methods
8.1 Thickness of Surface Silicon Layer and Buried
Oxide Layer
8.1.1 Measurement Methods Two non-contact, non-
destructive optical characterization techniques,
spectroscopic ellipsometry (SE) and spectroscopic
SEMI M47-0704 © SEMI 2001, 2004 6
reflectometry, have proven useful both for surface
silicon layer and buried oxide (BOX) layer thickness
measurements. Both techniques use reflected light to
allow deduction of the thickness and refractive index of
thin layers. In both cases, layer thickness and index of
refraction data must be “backed out” of the measured
optical data by a process of successive approximation.
Silicon islands in the BOX layer of SIMOX and
interface non-uniformity make these techniques less
reliable.
8.1.1.1 Spectroscopic Ellipsometry (SE) Measurement
— In this measurement, white light from a xenon arc
lamp passes through a polarizing rotating filter and
illuminates the sample site under study; reflected light
passes through an analyzer to a monochrometer and
photomultiplier detector. For each wavelength,
reflectivity oscillates with polarizer rotation; the
magnitude and phase of reflectivity changes are
measured to determine ellipsometric angles, δ and Ψ.
The two measured spectra are fit by successive
approximation to allow determination of the surface
silicon layer and BOX layer thickness and oxide
composition. For SE, the choice of instrument and
associated model and fitting parameters affect the
confidence-of-fit, so they should be taken into account
in the user-supplier agreement.
8.1.1.2 Spectroscopic Reflectometry Measurement —
In this measurement, light from a xenon arc lamp
passes through a grating monochrometer or optical
band-pass filters and illuminates the sample site under
study; reflected light is gathered by a detector. Specular
reflectivity is plotted as a function of wavelength from
0.4 µm to 1.1 µm. The analysis proceeds by making
successively better approximations to index of
refraction and absorption of each layer until an
acceptable fit is achieved. Measurements are made with
a reflectance mode optical interferometer.
8.1.1.3 Optical Model Fitting and Correlation —
There are slight, systematic differences between layer
thickness measured by SE and spectroscopic
reflectometry. Because of this, users and suppliers
should specify the actual measurement method to be
used. The two methods offer results which are
reproducible and well-correlated with each other over a
wide range of conditions. If both measurement
techniques are used, it is recommended that the
reflectance system measurements should be calibrated
to fit the results of the SE.
8.1.2 Measurement Positions The measurement
strategy is to make a detailed measurement with an
accurate fit on at least nine wafer sites, for example, the
wafer center, four points at half of the wafer radius and
four points at 10 mm from the wafer edge. The number
and position of wafer sites to be monitored should be
agreed on between users and suppliers. Generally, the
greater the variability relative to the mean, the larger
the number of sites that should be monitored. In each
case, the measurement system supplies a “goodness-of-
fit" parameter that indicates a level of confidence in the
fit to the measured data.
8.1.3 Surface Silicon Layer and Buried Oxide (BOX)
Layer Thickness — Spectra for each site are fit
independently with both the surface silicon and BOX
layer thickness as adjustable parameters. Both the mean
thickness and the uniformity should be specified.
8.1.4 Surface Silicon Thickness Mean Value Variation
8.1.4.1 After surface silicon
layer thickness is
measured for predetermined number of wafers and
mean value of surface silicon thickness is derived for
each wafer, the maximum and the minimum values are
chosen, and then the variation (nm) is calculated as;
± (Maximum mean value – Minimum mean value) / 2
8.1.4.2 In case of quite large number of wafers (ex. a
few hundreds), the variation (mm) can be calculated as;
± 3σ (3 times of the standard deviation)
under agreement between users and suppliers.
8.1.5 Surface Silicon Thickness Variation in Wafer
8.1.5.1 After surface silicon layer thickness is
measured at predetermined number of points within an
SOI wafer, the maximum and the minimum values are
chosen, and then the variation (nm) is calculated as ;
± (Maximum value – Minimum value) / 2
8.1.5.2 In case of multi-points measurements (ex. a few
hundreds) within an SOI wafer, the variation (nm) can
be calculated as;
± 3σ (3 times of the standard deviation)
under agreement between users and suppliers.
8.1.6 Buried Oxide (BOX) Thickness Variation
8.1.6.1 After BOX thickness is measured for
predetermined number of points on predetermined
number of wafers, the maximum and the minimum
values are chosen, and then the variation (%) is
calculated as;
± (Maximum value – Minimum value) × 100 / (2 ×
mean value)
8.1.6.2 In case of multi-points measurements (ex. a few
hundreds) within an SOI wafer or quite large number of
wafers (ex. a few hundreds), the variation (%) can be
calculated as;
± 3σ (3 times of the standard deviation) × 100 / (mean
value)
under agreement between users and suppliers.