semi合集-English.pdf - 第4955页
SEMI M11-0704 © SEMI 1988, 2004 12 Figure 10 Composite Defect of polysilico n gr owth and stacking faults. Magnification 500 times by Nomarksi Interference Microscopy. Approximat e SSIS image event siz e >>1.0 µm 5…
SEMI M11-0704 © SEMI 1988, 2004 11
Figure 9
The Compound ESF defect is an epi stacking fault that has a broken surface, but maintains the square shape
of an ESF. It typically scatters more light than a normal ESF because of the extra facets, so it is sized larger
in a SSIS. Magnification 500 times using Nomarski Interference Microscopy. Approximate SSIS event size:
280 µm
5
µ
m
SEMI M11-0704 © SEMI 1988, 2004 12
Figure 10
Composite Defect of polysilicon growth and stacking faults. Magnification 500 times by Nomarksi
Interference Microscopy. Approximate SSIS image event size >>1.0 µm
5
µ
m
SEMI M11-0704 © SEMI 1988, 2004 13
Figure 11
A Polysilicon Epitaxial Stacking Fault is a defect that covers a large area and is covered or surrounded by
ESFs. This classification is used when the surface appears to be poly-crystalline rather than single crystal. It
is almost always a Large Area Defect and is caused by a large particle that may still be visible (see Buried
Particle). Magnification 1500 times using Nomarski Interference Microscopy. Approximate SSIS event size,
440 µm
5
µ
m