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SEMI MF1391-0704 © 2004 8 8 Figure 2 Round Robin Results NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any particular application . The determination of t…

13 Precision

13.1 A round robin was carried out by JEIDA (now

JEITA

). The results of this 21-laboratory study are

shown in Table 1. Figure 2 shows that the sample

standard deviation increases with concentration value.

13.2 A single-laboratory investigation of the precision

of carbon measurement at cryogenic temperature with a

Fourier transform spectrophotometer was conducted

using a single sample analyzed once a day over a 30-

day period (30 measurement values). From this single-

laboratory, multiple-operator, multiple-day, single-

sample investigation of precision of carbon

measurement, the precision was found to be 0.02 ppma

(2 standard deviations). Nominal carbon content of the

sample was 0.16 ppma.

14 Bias

14.1 The bias of this test method cannot be evaluated

because there are no available reference standards

suitable for evaluating bias.

15 Keywords

15.1 carbon; infrared absorption; infrared spectroscopy;

silicon; single crystal silicon

Table 1 JEIDA Round Robin Results

Sample

Number

Number of

Measurements

Mean Value of

Concentration o

Substitutional

Carbon

Sample Standard

Deviation

1 21 2.79 0.204

2 21 3.89 0.342

3 21 0.23 0.059

4 21 0.35 0.050

5 21 0.74 0.100

6 21 0.93 0.081

7 21 1.03 0.079

8 21 1.25 0.168

9 21 0.41 0.083

10 21 0.84 0.123

11 20 0.80 0.081

12 20 0.94 0.135

13 20 0.99 0.095

14 20 0.30 0.097

15 20 0.46 0.084

16 20 0.71 0.070

17 20 1.07 0.108

18 20 1.46 0.145

19 20 3.41 0.276

20 20 0.31 0.051

21 20 0.45 0.073

22 20 0.51 0.099

23 20 0.74 0.116

24 20 0.16 0.055

25 20 0.62 0.100

26 20 0.87 0.131

Figure 2

Round Robin Results

NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth

herein for any particular application. The determination of the suitability of the standard is solely the

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herein. These standards are subject to change without notice.

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SEMI MF1392-1103 © SEMI 2003 1

SEMI MF1392-1103

TEST METHOD FOR DETERMINING NET CARRIER DENSITY

PROFILES IN SILICON WAFERS BY CAPACITANCE-VOLTAGE

MEASUREMENTS WITH A MERCURY PROBE

This standard was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved for publication by

the North American Regional Standards Committee on July 12, 2003. Initially available at www.semi.org

October 2003; to be published November 2003. Originally published by ASTM International as ASTM

F 1392-92. Last previous edition ASTM F 1392-02.

1 Purpose

1.1 Net carrier density is a critical parameter in growth

of epitaxial layers of silicon. This test method provides

a means for determining net carrier density without

formation of a special diode structure on the layer. It

may also be used in characterizing net carrier density in

polished silicon wafers.

1.2 This test method can be used for research and

development, process control, and materials specifi-

cation, evaluation, and acceptance purposes.

1.3 In the absence of interlaboratory test data to

establish its reproducibility (see Section 14.2), this test

method should be used for materials specification and

acceptance only after the parties to the test have

established reproducibility and correlation.

2 Scope

2.1 This test method

covers the measurement of net

carrier density and net carrier density profiles in

epitaxial and polished bulk silicon wafers in the range

from about 4 × 10

to about 8 × 10

carriers/cm

−3

(resistivity range from about 0.1 to about 100 Ω·cm in

n-type wafers and from about 0.24 to about 330 Ω·cm

in p-type wafers).

2.2 This test method requires the formation of a

Schottky barrier diode with a mercury probe contact to

an epitaxial or polished wafer surface. Chemical

treatment of the silicon surface may be required to

produce a reliable Schottky barrier diode.

The surface

treatment chemistries are different for n- and p-type

wafers. This test method is sometimes considered

destructive due to the possibility of contamination from

1 DIN 50439, Determination of the Dopant Concentration Profile of

a Single Crystal Semiconductor Material by Means of the

Capacitance-Voltage Method and Mercury Contact, is technically

equivalent to this test method. DIN 50439 is the responsibility of

DIN Committee NMP 221, with which SEMI maintains close liaison.

DIN 50439 is available in German and English from Beuth Verlag

GmbH, Burggrafenstraße 4-10, D-10772, Berlin, Germany.

2 Severin, P. J., and Poodt, G. J.,“Capacitance-Voltage

Measurements with a Mercury-Silicon Diode,” J. Electrochem. Soc,

119, 1384–1388 (1972).

the Schottky contact formed on the wafer surface;

however, repetitive measurements may be made on the

same test specimen.

2.3 This test method may be applied to epitaxial layers

on the same or opposite conductivity type substrate.

This test method includes descriptions of fixtures for

measuring substrates with or without an insulating

backseal layer.

2.4 The depth of the region that can be profiled

depends on the doping level in the test specimen.

Based on data reported by Severin

and Grove,

Figure

1 shows the relationships between depletion depth,

dopant density, and applied voltage together with the

breakdown voltage of a mercury silicon contact. The

test specimen can be profiled from approximately the

depletion depth corresponding to an applied voltage of

1 V to the depletion depth corresponding to the

maximum applied voltage (200 V or about 80% of the

breakdown voltage, whichever is lower). To be

measured by this test method, a layer must be thicker

than the depletion depth corresponding to an applied

voltage of 2 V.

2.5 This test method is intended for rapid carrier

density determination when extended sample

preparation time or high temperature processing of the

wafer is not practical.

2.6 This test method provides for determining the

effective area of the mercury probe contact using

polished bulk reference wafers that have been measured

for resistivity at 23° C in accordance with SEMI MF84

(see Note 1). This test method also includes procedures

for calibration of the apparatus for measuring both

capacitance and voltage.

NOTE 1: An alternative method of determining the effective

area of the mercury probe contact that involves the use of

reference wafers whose net carrier density has been measured

using fabricated mesa or planar p-n junction diodes or

evaporated Schottky diodes is not included in this test method

but may be used if agreed upon by the parties to the test.

3 Grove, A. S., Physics and Technology of Semiconductor Devices

(John Wiley and Sons, New York, 1967) Sections 6.2 and 6.7c.