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SEMI M16-1103 © SEMI 1989, 2003 1 SEMI M16-1103 SPECIFICATION FOR POLY CRYSTALLINE SILICON This specification was technically approved by th e Global Silicon Wafer Committee and is the direct responsibility of the North …

SEMI M15-0298 © SEMI 1989, 1998 2

4" Diameter Slices 200 400 #2, 3

Chips (≥ 0.5 mm × 0.3 mm)

None None #1

8 Cracks None None #1

9 Dimples None None #1, 2

10 Gallium Inclusions/Precipitates None None #1, 2

11 Orange Peel None None #1, 2

12 Saw Marks None None #1

13 Striations None None #1, 2

14 Twins None None #1, 2

Item # Characteristics – Back Surface

Maximum Defect

LimitsPrime Wafer

Maximum Defect

LimitsTest Wafer Notes

15 Stain None None #2, 4

16 Saw Marks None None #1, 5

Chips (≥ 0.5 mm × 0.3 mm)

None None #1

18 Cracks None None #1

19 Listed Defects #10, 14 None None #1, 2

20 Listed Defects #1, 2, 6 #6

NOTES:

1. These defect limits are meant to apply only to those characteristics which can be seen with the unaided eye under high-intensity illumination

according to ASTM Practice F 523. Limits for other defects listed and defined in this section which require the aid of a microscope, preferential

etching, or other apparatus must be agreed upon between supplier and user.

2. Peripheral Edge Allowance — The outer edge exclusion for observation shall be determined from the following tabe:

Diameter Outer Edge Exclusion for Observation

2 inch 2 mm

3 inch 3 mm

4 inch 3 mm

3. LPD shall be counted by measuring equipment designed for detecting laser light scatter. Selection of the measuring equipment and the

requirement for the precision are to be agreed upon between supplier and user.

4. Back Surface Stain — An area of undercutting, texturing, or oxidation, common in waxless polished wafers.

5. The depth of allowed saw marks is to be no greater than 5 µm. The measuring method is to be agreed upon between supplier and user.

6. Item #20 — To be agreed upon between supplier and user.

NOTICE: These standards do not purport to address safety issues, if any, associated with their use. It is the

responsibility of the user of these standards to establish appropriate safety and health practices and determine the

applicability of regulatory limitations prior to use. SEMI makes no warranties or representations as to the suitability

of the standards set forth herein for any particular application. The determination of the suitability of the standard is

solely the responsibility of the user. Users are cautioned to refer to manufacturer’s instructions, product labels,

product data sheets, and other relevant literature respecting any materials mentioned herein. These standards are

subject to change without notice.

The user’s attention is called to the possibility that compliance with this standard may require use of copyrighted

material or of an invention covered by patent rights. By publication of this standard, SEMI takes no position

respecting the validity of any patent rights or copyrights asserted in connection with any item mentioned in this

standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and

the risk of infringement of such rights, are entirely their own responsibility.

International), 3081 Zanker Road, San Jose, CA 95134. Reproduction o

the contents in whole or in part is forbidden without express written

consent of SEMI.

SEMI M16-1103 © SEMI 1989, 2003 1

SEMI M16-1103

SPECIFICATION FOR POLYCRYSTALLINE SILICON

This specification was technically approved by the Global Silicon Wafer Committee and is the direct

responsibility of the North American Silicon Wafer Committee. Current edition approved by the North

American Regional Standards Committee on September 16, 2003. Initially available at www.semi.org

October 2003; to be published November 2003. Originally published in 1989; previously published

December 1996.

NOTICE: This document was rewritten in its entirety

in 2003, and is a replacement for the previous versions

of both SEMI M16 and SEMI M16.1.

1 Purpose

1.1 This specification is intended for use in procure-

ment of polycrystalline silicon for growth of electronic

grade monocrystalline silicon ingots. Such ingots are

sliced into wafers that are subsequently used for the

production of semiconductor devices, integrated cir-

cuits, and other microelectronic components including

microelectromechanical systems (MEMS).

2 Scope

2.1 This specification covers requirements for poly-

crystalline silicon (poly) used to produce single crystal

silicon by either the modified Czochralski (Cz) or float

zone (FZ) crystal growth technique for applications in

the semiconductor device industry.

2.2 Form and dimensional characteristics are the only

standardized properties set forth below. A purchase

specification may include requirements for additional

physical properties as listed in this specification,

together with test methods suitable for determining

their magnitudes.

NOTE 1: JEITA has also established a specification for

polysilicon.

This specification also includes specification

limits and specified measurement methods for purity and

surface metal contamination. Similarities and differences

between this standard and JEITA EM-3601 are discussed in

Related Information 1.

NOTICE: This standard does not purport to address

safety issues, if any, associated with its use. It is the

responsibility of the users of this standard to establish

appropriate safety health practices and determine the

applicability of regulatory or other limitations prior to

use.

1 JEITA EM-3601, Standard specification for high purity

polycrystalline silicon. Available in Japanese and English from Japan

Electronics and Information Technology Industries Association, 3rd

floor, Mitsui Sumitomo Kaijo Bldg. Annex, 11, Kanda-Surugadai 3-

chome, Chiyoda-ku, Tokyo 101-0062, Japan, Web site:

www.jeita.or.jp

3 Referenced Standards

3.1 SEMI Standards

SEMI MF1708 — Practice for Evaluation of Granular

Polysilicon by Melter-Zoner Techniques

SEMI MF1723 — Practice for Evaluation of Poly-

crystalline Silicon Rods by Float-Zone Crystal Growth

and Spectroscopy

SEMI MF1724 — Test Method for Measuring Surface

Metal Contamination of Polycrystalline Silicon by Acid

Extraction-Atomic Absorption Spectroscopy

3.2 ASTM Standards

E 122 — Practice for Choice of Sample Size to

Estimate Average Quality of a Lot or Process

3.3 Other Standard

ANSI/ASQC Z1.4-1993 — Sampling Procedures and

Tables for Inspection by Attributes

NOTICE: Unless otherwise indicated, all documents

cited shall be the latest published versions.

4 Terminology

4.1 Definitions

4.1.1 etched polysilicon — polysilicon that has been

etched with acid to remove surface contamination.

4.1.2 lot — all of the material of nominally identical

purity and characteristics contained in a single

shipment, manufactured with similar processing

conditions, and traceable to the manufacturing

conditions. A lot may be further defined as the

polysilicon produced from one reactor run.

4.1.3 polycrystalline silicon — silicon, formed by

chemical vapor deposition from a silicon source gas,

having a structure that contains large angle grain

boundaries, twin boundaries, or both. Also known as

poly, or polysilicon.

2 Volume 14.02 of the Annual Book of ASTM Standards, ASTM

International, 100 Barr Harbor Drive, West Conshohocken, PA

19428-2959, USA. Telephone: 610.832.9585, Fax: 610.832.9555,

Web site:

www.astm.org

3 American Society for Quality Control, 611 East Wisconsin

Avenue, Milwaukee, WI 53202, USA. Web site: www.asqc.org.

SEMI M16-1103 © SEMI 1989, 2003 2

5 Ordering Information

5.1 Purchase orders for polysilicon furnished to this

specification shall include the following items:

5.1.1 Form (nugget, granular, or rod)

5.1.2 Shape and size distribution (nugget form only)

5.1.3 Purity

5.1.4 Surface texture (nugget form only)

5.1.5 Surface condition

5.1.6 Optionally, surface metal contamination

5.1.7 Appearance

5.1.8 Lot acceptance procedures (see Section 8 )

5.1.9 Certification (if required) (see Section 10 )

5.1.10 Packing and marking (see Section 11 )

6 Materials and Manufacture

6.1 The material shall consist of polysilicon with the

form specified in the purchase order or contract.

7 Physical Requirements

7.1 The material shall conform to the properties

specified in the purchase order or contract, as follows

(see Table 1):

7.1.1 Shape and size distribution (nugget form only)

7.1.2 Purity

7.1.3 Surface texture (nugget form only)

7.1.4 Surface condition

7.1.5 Surface metal contamination, if specified

7.1.6 Appearance

8 Sampling

8.1 Unless otherwise specified, ASTM Practice E 122

shall be used. When so specified, appropriate sample

sizes shall be selected from each lot in accordance with

ANSI/ASQC Z1.4-1993. Inspection levels shall be

agreed upon between the supplier and the purchaser.

9 Test Methods

9.1 Shape and Size Distribution (Nugget Form Only)

— Determine by methods agreed upon by the purchaser

and the supplier.

9.2 Purity — For nugget and rod forms, determine in

accordance with SEMI MF1723. For granular form,

determine in accordance with SEMI MF1708.

9.3 Surface Texture (Nugget Form Only) — Determine

by a method agreed upon by the purchaser and the

supplier. Visual limit standards shall be used to

describe acceptable limits.

9.4 Surface Metal Contamination, if Specified —

Determine in accordance with SEMI MF1724.

9.5 Surface Condition — Identify as to whether or not

the surface has been etched.

9.6 Appearance — Inspect visually for stains, discolo-

ration, and visible contamination.

10 Certification

10.1 Upon request of the purchaser in the contract or

order, a manufacturer’s or supplier’s certification that

the material was manufactured and tested in accordance

with the specification shall be furnished at the time of

shipment (Certificate of Compliance). Upon request, a

report of the test results may also be required

(Certificate of Analysis).

10.2 In the interest of controlling inspection costs, the

supplier and the purchaser may agree that the material

shall be certified as “capable of meeting” certain

requirements. In this context, “capable of meeting”

shall signify that the supplier is not required to perform

the appropriate test in Section 9. However, if the

purchaser performs the test and the material fails to

meet the requirement, the material may be subject to

rejection.

11 Packing and Marking

11.1 Special packing requirements shall be subject to

agreement between the supplier and purchaser.

Otherwise all poly shall be handled, inspected, and

packed in bags and boxes in such a manner as to

minimize abrasion, chipping, and contamination, and in

accordance with the best industry practices to provide

ample protection against damage during shipment.

11.2 The poly supplied under the specification shall be

identified by appropriately labeling the outside of each

box and each bag therein. Identification shall include,

as a minimum, the weight and lot number of the

polysilicon. The lot number shall provide traceability

to information concerning the manufacturing history of

the particular poly in that lot. Such information shall be

kept on file at the manufacturer’s facility for at least

three years after that particular lot has been accepted by

the purchaser.

12 Related Documents

12.1 The following SEMI standards, cited in SEMI

MF1708 and MF1723 are required to perform the tests

described in those practices: