semi合集-English.pdf - 第4909页
SEMI M8-0703 © SEMI 1984, 2003 6 Item Specification CLASSIFICATION A B C Zinc Optional Unspecified Unspecified 7.2 Surface Organics Optional Unspecified Unspecified 8.0 Front Surface Visual Characteristics 8.1 Scratches …
SEMI M8-0703 © SEMI 1984, 2003 5
Item Specification
CLASSIFICATION
A B C
5.0
Wafer Preparation Characteristics
5.1 Wafer ID Marking Optional Optional Unspecified
5.2 Front Surface Thin Films Optional Optional Unspecified
5.3 Denuded Zone Optional Optional Unspecified
5.4 Extrinsic Gettering Optional Optional Unspecified
5.5 Backseal Optional Optional Unspecified
5.6 Annealing Optional Optional Unspecified
6.0
Mechanical Characteristics
6.1 Diameter
2.00 inch ± 0.015 in. 0.020 in. 0.030 in.
3.00 inch ± 0.020 in. 0.025 in. 0.050 in.
100 mm ± 0.20 mm 0.50 mm 1.00 mm
125 mm ± 0.20 mm 0.50 mm 1.00 mm
6.2 Primary Flat Dimension
2.00 inch (flat length) 0.500–0.750 in. 0.500–0.750 in. 0.500–0.750 in.
3.00 inch (flat length) 0.750–1.00 in. 0.750–1.00 in. 0.750–1.00 in.
100 mm (flat length) 30–35 mm 28–37 mm 28–37 mm
125 mm (flat length) 40–45 mm 38–47 mm 38–47 mm
6.3 Primary Flat Orientation {110} ± 2°
6.4 Secondary Flat Length Unspecified
6.5 Secondary Flat Location Unspecified
6.6 Edge Profile 5.2 of SEMI M1 Optional
6.7 Thickness
2 inch 0.0095–0.0125 in. 0.0090–0.013 in. 0.0080–0.0130 in.
3 inch 0.0135–0.0165 in. 0.013–0.017 in. 0.012–0.018 in.
100 mm (SEMI M1.5) 505–545 µm 500–550 µm 475–575 µm
100 mm (SEMI M1.6) 605–645 µm 600–650 µm 575–675 µm
125 mm 605–645 µm 600–650 µm 575–675 µm
6.8 Thickness Variation (TTV) Unspecified
6.9 Surface Orientation User specified Optional Unspecified
6.10 Bow Unspecified
6.11 Warp Unspecified
6.12 Sori Unspecified
6.13 Flatness/Global Unspecified
6.14 Flatness/Site Unspecified
7.0
Front Surface Chemistry
7.1 Surface Metal Contamination
Sodium Optional Unspecified Unspecified
Aluminum Optional Unspecified Unspecified
Potassium Optional Unspecified Unspecified
Chromium Optional Unspecified Unspecified
Iron Optional Unspecified Unspecified
Nickel Optional Unspecified Unspecified
Copper Optional Unspecified Unspecified
SEMI M8-0703 © SEMI 1984, 2003 6
Item Specification
CLASSIFICATION
A B C
Zinc Optional Unspecified Unspecified
7.2 Surface Organics Optional Unspecified Unspecified
8.0
Front Surface Visual Characteristics
8.1 Scratches (# of) Unspecified
(cumulative length) R/5 R/2 Unspecified
8.2 Pits None Unspecified
8.3 Haze None Unspecified
8.4 Localized Light Scatterers
(Density per square meter with 4 mm edge exclusion)
2 inch
≤1900 ≤5000
Unspecified
3 inch
≤1900 ≤5000
Unspecified
100 mm
≤1900 ≤5000
Unspecified
125 mm
≤1900 ≤5000
Unspecified
8.5 Contamination/area None Unspecified
8.6 Edge Chips None Unspecified
8.7 Edge Cracks None Unspecified
8.8 Cracks, Crow's feet None Unspecified
8.9 Craters None Unspecified
8.10 Dimples None Unspecified
8.11 Grooves None Unspecified
8.12 Mounds None Unspecified
8.13 Orange Peel None Unspecified
8.14 Saw Marks None Unspecified
8.15 Dopant Striation Rings None Unspecified
8.16 Stains None Unspecified
9.0
Back Surface Characteristics
9.1 Edge Chips None Unspecified
9.2 Cracks, Crow's feet None Unspecified
9.3 Contamination/Area None Unspecified
9.4 Saw Marks None Unspecified
9.5 Stains None Unspecified
9.6 Roughness Unspecified
9.7 Brightness (gloss) Unspecified
TBD
(NOTE 1)
Back Surface Finish Unspecified
NOTE 1: A revision to SEMI M18 to provide this item number is being developed. When this revision is completed, this specification will be
revised to include the assigned item number from SEMI M18.
SEMI M8-0703 © SEMI 1984, 2003 7
Table 4 Specifications for Large Diameter Silicon Test Wafers
Item Specification
CLASSIFICATION
MECHANICAL PROCESS
1.0
General Characteristics
1.1 Growth Method CZ or MCZ CZ or MCZ
1.2 Crystal Orientation Unspecified User specified
1.3 Conductivity Type Unspecified [ ]P or [ ]N
1.4 Dopant Unspecified [ ]Boron [ ]Phosphorus
1.5 Nominal Edge Exclusion
Distance for FQA
3 mm
2.0
Electrical Characteristics
2.1 Resistivity Unspecified
≥1 Ω·cm
2.2 Radial Resistivity Variation (RRG) Unspecified
2.3 Resistivity Striations Unspecified
2.4 Minority Carrier Lifetime Unspecified
3.0
Chemical Characteristics
3.1 Oxygen Concentration Unspecified
3.2 Radial Oxygen Variation Unspecified
3.3 Carbon Concentration Unspecified
4.0
Structural Characteristics
4.1 Dislocation Etch Pit Density Unspecified < 500/cm
2
4.2 Slip Unspecified None
4.3 Lineage Unspecified None
4.4 Twins Unspecified None
4.5 Swirl Unspecified
4.6 Shallow Pits Unspecified
4.7 OISF Unspecified
4.8 Oxide Precipitates Unspecified
5.0
Wafer Preparation Characteristics
5.1 Wafer ID Marking Optional
5.2 Front Surface Thin Films Unspecified
5.3 Denuded Zone Unspecified
5.4 Extrinsic Gettering Unspecified
5.5 Backseal Unspecified
5.6 Annealing Unspecified
6.0
Mechanical Characteristics
6.1 Diameter
150 mm ± SEMI M1.8 or SEMI M1.13
200 mm ± SEMI M1.9 or SEMI M1.10
300 mm ± SEMI M1.15
6.2 Primary Flat Dimension
(or Notch Depth)
150 mm (flat length) SEMI M1.8 or SEMI M1.13