semi合集-English.pdf - 第7226页

SEMI MF43-0705 © SEMI 2003, 2005 9 NOTICE: SEMI makes no warranties or represen tations as to the suitability o f the standards set forth herein for any particular application. The determination of the suitability of the…

100%1 / 7923
SEMI MF43-0705 © SEMI 2003, 2005 8
10.2 Calculate the average resistivity at the temperature of measurement as follows:
2
rf
av
(8)
10.3 If necessary, correct the resistivity to a reference temperature of 23C as follows:
)( 231
23
TC
T
av
(9)
where:
23
= resistivity corrected to 23C, ·cm,
av
= average resistivity at temperature of measurement, ·cm,
C
T
= temperature coefficient appropriate to specimen (see ¶3.1.4 and Note 3), and
T = temperature of measurement, °C.
NOTE 12: The temperature coefficients of resistivity cited here for germanium and silicon are valid for measurements taken in
range from 18 to 28°C.
NOTE 13: If desired, correction may be made for probes with unequal probe spacings by multiplying the average resistivity by
the probe spacing correction factor (F
sp
) (see Note 4) before correcting the resistivity to the reference temperature.
11 Report
11.1 For referee tests, report the following information:
11.1.1 Identification of test specimen,
11.1.2 Ambient temperature of test,
11.1.3 Probe spacing,
11.1.4 Method of determining cross-sectional area,
11.1.5 Method of surface preparation,
11.1.6 Instrumentation used to measure current and voltage,
11.1.7 Location of measurement in relation to a reference point on the specimen,
11.1.8 Magnitude of current,
11.1.9 Calculated resistivity for both current directions, and
11.1.10 Average resistivity at measurement temperature, and if computed, at 23C.
11.2 For routine tests, report the items in ¶¶11.1.1, 11.1.2, and 11.1.10 together with such other items listed above
as may be deemed significant.
12 Precision
12.1 Silicon bars and wafers with resistivity in the range from 5 to 20 ·cm were tested in a nine-laboratory round
robin conducted in 1965. No geometrical or temperature correction factors were applied. The multilaboratory
precisions, as estimated from three times the mean values of the relative sample standard deviations, were ±6% for
the two-probe test method (on bars) and ±8% for the four-probe test method (on wafers). The precision for other
resistivity ranges and other materials has not been established.
13 Keywords
13.1 germanium; resistivity; semiconductor; silicon
SEMI MF43-0705 © SEMI 2003, 2005 9
NOTICE: SEMI makes no warranties or representations as to the suitability of the standards set forth herein for any
particular application. The determination of the suitability of the standard is solely the responsibility of the user.
Users are cautioned to refer to manufacturer's instructions, product labels, product data sheets, and other relevant
literature, respecting any materials or equipment mentioned herein. These standards are subject to change without
notice.
By publication of this standard, Semiconductor Equipment and Materials International (SEMI) takes no position
respecting the validity of any patent rights or copyrights asserted in connection with any items mentioned in this
standard. Users of this standard are expressly advised that determination of any such patent rights or copyrights, and
the risk of infringement of such rights are entirely their own responsibility.
Copyright by SEMI® (Semiconductor Equipment and Materials
International), 3081 Zanker Road, San Jose, CA 95134. Reproduction of
the contents in whole or in part is forbidden without express written
consent of SEMI.
SEMI MF154-0305 © SEMI 2003, 2005 1
SEMI MF154-0305
GUIDE FOR IDENTIFICATION OF STRUCTURES AND
CONTAMINANTS SEEN ON SPECULAR SILICON SURFACES
This guide was technically approved by the Global Silicon Wafer Committee and is the direct responsibility
of the North American Silicon Wafer Committee. Current edition approved for publication by the North
American Regional Standards Committee on December 10, 2004. Initially available at
www.semi.org
January 2005; to be published March 2005. Original edition published by ASTM International as ASTM F
154-72T. Last previous edition SEMI MF154-02.
1 Purpose
1.1 The purpose of this guide is to list, illustrate, and provide reference for various characteristic features and
contaminants that are seen on highly specular silicon wafers.
1.2 Ambiguities and uncertainties regarding surface defects may be resolved by reference to this guide.
1.3 There is close alignment between this guide and common specifications used for the purchase of silicon wafers.
2 Scope
2.1 This guide contains a compilation of the most commonly observed singularly discernible structures on specular
silicon surfaces.
2.2 Recommended practices for delineation and observation of these artifacts are referenced. The artifacts described
in this guide are intended to parallel and support the content of the specification form for order entry in SEMI M18.
2.3 These artifacts and common synonyms are arranged alphabetically in Tables 1 and 2 and illustrated in Figures 1
through 68.
NOTICE: This standard does not purport to address safety issues, if any, associated with its use. It is the
responsibility of the user of this standard to establish appropriate safety and health guides and determine the
applicability of regulatory or other limitations prior to use.
3 Limitations
3.1 Defects, structures, features, or artifacts revealed or enhanced by the referenced methods and exhibited in this
guide must be carefully interpreted. Unless utmost care is exercised, the identification of the structure may be
ambiguous.
4 Referenced Standards
4.1 SEMI Standards
SEMI M18 — Format for Silicon Wafer Specification Form for Order Entry
SEMI M59 — Terminology for Silicon Technology
SEMI MF523 — Practice for Unaided Visual Inspection of Polished Silicon Wafer Surfaces
SEMI MF1725 — Guide for Analysis of Crystallographic Perfection of Silicon Ingots
SEMI MF1726 — Guide for Analysis of Crystallographic Perfection of Silicon Wafers
SEMI MF1727 — Practice for Detection of Oxidation Induced Defects in Polished Silicon Wafers
SEMI MF1809 — Guide for Selection and Use of Etching Solutions to Delineate Structural Defects in Silicon
SEMI MF1810 — Test Method for Counting Preferentially Etched or Decorated Surface Defects in Silicon Wafers
NOTICE: Unless otherwise indicated, all documents cited shall be the latest published versions.